Citation: Ga. Gamal, TEMPERATURE-DEPENDENCE OF THE OPTICAL-ENERGY GAP AND THERMOELECTRIC STUDIES OF TLINS2 CRYSTALS, Semiconductor science and technology, 13(2), 1998, pp. 185-189
Citation: Ga. Gamal, TEMPERATURE-DEPENDENCE OF THE OPTICAL-ENERGY GAP AND THE THERMOELECTRIC STUDIES OF TLINS2 CRYSTALS, Indian Journal of Pure & Applied Physics, 36(7), 1998, pp. 386-390
Citation: Ga. Gamal, THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENON IN IN6S7 LAYERCRYSTALS, Semiconductor science and technology, 12(9), 1997, pp. 1106-1110
Citation: Ga. Gamal, ON THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENA IN IN6S7 LAYER CRYSTALS, Crystal research and technology, 32(5), 1997, pp. 723-731
Citation: Ga. Gamal, NEW TECHNIQUE FOR CRYSTAL-GROWTH AND PHASE-TRANSITION IN TLINS2 CRYSTALS, Crystal research and technology, 32(4), 1997, pp. 561-567
Authors:
GAMAL GA
NASSARY MM
NAGAT AT
ABOUALWAFA AM
Citation: Ga. Gamal et al., THERMAL AND ELECTRICAL-TRANSPORT PROPERTIES OF TL2TE SINGLE-CRYSTALS, Semiconductor science and technology, 11(4), 1996, pp. 516-520
Citation: Ga. Gamal et Mm. Nassary, CRYSTALLIZATION AND THERMOELECTRIC-POWER OF TL2TE3 SINGLE-CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 315-321
Citation: Ga. Gamal, NEW TECHNIQUE FOR CRYSTAL-GROWTH AND PHASE-TRANSITION IN TLINS2 CRYSTALS, Physica status solidi. a, Applied research, 158(2), 1996, pp. 441-447
Citation: Ha. Elshaikh et Ga. Gamal, PREPARATION AND THERMOELECTRIC EFFECT OF GALLIUM SESQUISULFIDE SINGLE-CRYSTALS, Semiconductor science and technology, 10(7), 1995, pp. 1034-1036
Citation: Ga. Gamal et Ha. Elshaikh, INVESTIGATION OF THERMOELECTRIC-POWER OF GA2SE3 MONOCRYSTALS, Crystal research and technology, 30(6), 1995, pp. 867-872
Citation: Ga. Gamal, ELECTRONIC TRANSPORT-PROPERTIES OF THALLIUM SESQUISELENIDE SINGLE-CRYSTALS, Crystal research and technology, 28(3), 1993, pp. 395-399