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Results: 1-16 |
Results: 16
LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD
Authors: TERUKOV EI KONKOV OI KUDOYAROVA VK GUSEV OB WEISER G
Citation: Ei. Terukov et al., LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 884-885
PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE
Authors: SOBOLEV NA GUSEV OB SHEK EI VDOVIN VI YUGOVA TG EMELYANOV AM
Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328
DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON
Authors: YASSIEVICH IN BRESLER MS GUSEV OB
Citation: In. Yassievich et al., DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON, Journal of physics. Condensed matter, 9(43), 1997, pp. 9415-9425
EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER)
Authors: FUHS W ULBER I WEISER G BRESLER MS GUSEV OB KUZNETSOV AN KUDOYAROVA VK TERUKOV EI YASSIEVICH IN
Citation: W. Fuhs et al., EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER), Physical review. B, Condensed matter, 56(15), 1997, pp. 9545-9551
ER IN MOLECULAR-BEAM EPITAXY-GROWN GAAS ALGAAS STRUCTURES/
Authors: GUSEV OB PRINEAS JP LINDMARK EK BRESLER MS KHITROVA G GIBBS HM YASSIEVICH IN ZAKHARCHENYA BP MASTEROV VF
Citation: Ob. Gusev et al., ER IN MOLECULAR-BEAM EPITAXY-GROWN GAAS ALGAAS STRUCTURES/, Journal of applied physics, 82(4), 1997, pp. 1815-1823
ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON
Authors: GUSEV OB KUZNETSOV AN TERUKOV EI BRESLER MS KUDOYAROVA VK YASSIEVICH IN ZAKHARCHENYA BP FUHS W
Citation: Ob. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 70(2), 1997, pp. 240-242
ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP PAK PE SOBOLEV NA SHEK EI YASSIEVICH IN MAKOVIICHUK MI PARSHIN EO
Citation: Ms. Bresler et al., ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON, Semiconductors, 30(5), 1996, pp. 479-482
INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION
Authors: BRESLER MS GUSEV OB ZOTOVA NV AYDARALIEV M KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: Ms. Bresler et al., INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION, Optical materials, 6(1-2), 1996, pp. 111-116
EXCITON MECHANISM OF ERBIUM ION EXCITATIO N IN SILICON
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP YASSIEVICH IN
Citation: Ms. Bresler et al., EXCITON MECHANISM OF ERBIUM ION EXCITATIO N IN SILICON, Fizika tverdogo tela, 38(5), 1996, pp. 1474-1482
ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP KUDOYAROVA VK KUZNETSOV AN TERUKOV EI FUS V YASSIEVICH IN
Citation: Ms. Bresler et al., ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE, Fizika tverdogo tela, 38(4), 1996, pp. 1189-1194
RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/
Authors: BRESLER MS GUSEV OB AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS MN TALALAKIN GN
Citation: Ms. Bresler et al., RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/, Semiconductors, 29(2), 1995, pp. 108-112
RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/
Authors: AYDARALIEV M BRESLER MS GUSEV OB KARANDASHOV SA MATVEEV BA STUS MN TALALAKIN GN ZOTOVA NV
Citation: M. Aydaraliev et al., RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/, Semiconductor science and technology, 10(2), 1995, pp. 151-156
ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: BRESLER MS GUSEV OB KUDOYAROVA VK KUZNETSOV AN PAK PE TERUKOV EI YASSIEVICH IN ZAKHARCHENYA BP FUHS W STURN A
Citation: Ms. Bresler et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 67(24), 1995, pp. 3599-3601
EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER
Authors: SOBOLEV NA BRESLER MS GUSEV OB SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
ORIGIN OF RECOMBINATION TRANSITIONS AT THE LATTICE-MATCHED GAINASSB-GASB N-N TYPE-II HETEROJUNCTIONS
Authors: HULICIUS E OSWALD J PANGRAC J SIMECEK T BRESLER NS CHEBAN VN GUSEV OB TITKOV AN
Citation: E. Hulicius et al., ORIGIN OF RECOMBINATION TRANSITIONS AT THE LATTICE-MATCHED GAINASSB-GASB N-N TYPE-II HETEROJUNCTIONS, Journal of applied physics, 75(8), 1994, pp. 4189-4193
RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/
Authors: BRESLER MS GUSEV OB TITKOV AN CHEBAN VN YAKOVLEV YP HULICIUS E OSWALD J PANGRAC J SIMECEK T
Citation: Ms. Bresler et al., RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/, Semiconductors, 27(4), 1993, pp. 341-345
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