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Results: 1-25 | 26-50 | 51-53
Results: 1-25/53
Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices
Authors: Mur, P Semeria, MN Olivier, M Papon, AM Leroux, C Reimbold, G Gentile, P Magnea, N Baron, T Clerc, R Ghibaudo, G
Citation: P. Mur et al., Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices, APPL SURF S, 175, 2001, pp. 726-733
Impact of gate tunneling leakage on the operation of NMOS transistors withultra-thin gate oxides
Authors: Lime, F Clerc, R Ghibaudo, G Pananakakis, G Guegan, G
Citation: F. Lime et al., Impact of gate tunneling leakage on the operation of NMOS transistors withultra-thin gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 119-125
Extraction of oxide thickness in the nanometer range using C(V) characteristics
Authors: Leroux, C Ghibaudo, G Reimbold, G Clerc, R Mathieu, S
Citation: C. Leroux et al., Extraction of oxide thickness in the nanometer range using C(V) characteristics, MICROEL ENG, 59(1-4), 2001, pp. 277-283
Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures
Authors: De Salvo, B Ghibaudo, G Luthereau, P Baron, T Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures, SOL ST ELEC, 45(8), 2001, pp. 1513-1519
A physical compact model for direct tunneling from NMOS inversion layers
Authors: Clerc, R O'Sullivan, P McCarthy, KG Ghibaudo, G Pananakakis, G Mathewson, A
Citation: R. Clerc et al., A physical compact model for direct tunneling from NMOS inversion layers, SOL ST ELEC, 45(10), 2001, pp. 1705-1716
Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions
Authors: Monsieur, F Vincent, E Roy, D Bruyere, S Pananakakis, G Ghibaudo, G
Citation: F. Monsieur et al., Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions, MICROEL REL, 41(9-10), 2001, pp. 1295-1300
Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics
Authors: Fadlallah, M Szewczyk, A Giannakopoulos, C Cretu, B Monsieur, F Devoivre, T Jomaah, J Ghibaudo, G
Citation: M. Fadlallah et al., Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics, MICROEL REL, 41(9-10), 2001, pp. 1361-1366
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Authors: Bruyere, S Monsieur, F Roy, D Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Failures in ultrathin oxides: Stored energy or carrier energy driven?, MICROEL REL, 41(9-10), 2001, pp. 1367-1372
Stress induced leakage current at low field in ultra thin oxides
Authors: Lime, F Ghibaudo, G Guegan, G
Citation: F. Lime et al., Stress induced leakage current at low field in ultra thin oxides, MICROEL REL, 41(9-10), 2001, pp. 1421-1425
Direct tunnelling models for circuit simulation
Authors: O'Sullivan, P Clerc, R McCarthy, KG Mathewson, A Ghibaudo, G
Citation: P. O'Sullivan et al., Direct tunnelling models for circuit simulation, MICROEL REL, 41(7), 2001, pp. 951-957
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)
Authors: Clerc, R Spinelli, AS Ghibaudo, G Leroux, C Pananakakis, G
Citation: R. Clerc et al., Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm), MICROEL REL, 41(7), 2001, pp. 1027-1030
Body effect induced wear-out acceleration in ultra-thin oxides
Authors: Bruyere, S Roy, D Robilliart, E Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Body effect induced wear-out acceleration in ultra-thin oxides, MICROEL REL, 41(7), 2001, pp. 1031-1034
Wear-out, breakdown occurrence and failure detection in 18-25 angstrom ultrathin oxides
Authors: Monsieur, F Vincent, E Pananakakis, G Ghibaudo, G
Citation: F. Monsieur et al., Wear-out, breakdown occurrence and failure detection in 18-25 angstrom ultrathin oxides, MICROEL REL, 41(7), 2001, pp. 1035-1039
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors
Authors: Haendler, S Jomaah, J Ghibaudo, G Balestra, F
Citation: S. Haendler et al., Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors, MICROEL REL, 41(6), 2001, pp. 855-860
An improved time domain analysis of the charge pumping current
Authors: Masson, P Autran, JL Ghibaudo, G
Citation: P. Masson et al., An improved time domain analysis of the charge pumping current, J NON-CRYST, 280(1-3), 2001, pp. 255-260
Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics
Authors: Pogany, D Chroboczek, JA Ghibaudo, G
Citation: D. Pogany et al., Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics, J APPL PHYS, 89(7), 2001, pp. 4049-4058
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Masson, P Baron, T Buffet, N Fernandes, A Guillaumot, B
Citation: B. De Salvo et al., Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices, IEEE DEVICE, 48(8), 2001, pp. 1789-1799
Water-upwelling pipes and soft-sediment-deformation structures in lower Pleistocene calcarenites (Salento, southern Italy)
Authors: Massari, F Ghibaudo, G D'Alessandro, A Davaud, E
Citation: F. Massari et al., Water-upwelling pipes and soft-sediment-deformation structures in lower Pleistocene calcarenites (Salento, southern Italy), GEOL S AM B, 113(5), 2001, pp. 545-560
New ratio method for effective channel length and threshold voltage extraction in MOS transistors
Authors: Cretu, B Bontchacha, T Ghibaudo, G Balestra, F
Citation: B. Cretu et al., New ratio method for effective channel length and threshold voltage extraction in MOS transistors, ELECTR LETT, 37(11), 2001, pp. 717-719
Device and circuit cryogenic operation for low temperature electronics - General Introduction
Authors: Balestra, F Ghibaudo, G
Citation: F. Balestra et G. Ghibaudo, Device and circuit cryogenic operation for low temperature electronics - General Introduction, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 1-2
Device physics and electrical performance of bulk silicon MOSFETs
Authors: Ghibaudo, G Balestra, F
Citation: G. Ghibaudo et F. Balestra, Device physics and electrical performance of bulk silicon MOSFETs, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 3-35
SOI MOSFETs
Authors: Balestra, F Ghibaudo, G
Citation: F. Balestra et G. Ghibaudo, SOI MOSFETs, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 37-67
Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions
Authors: Ghibaudo, G Clerc, R Vincent, E Bruyere, S Autran, JL
Citation: G. Ghibaudo et al., Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions, CR AC S IV, 1(7), 2000, pp. 911-927
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
Authors: Ghibaudo, G Bruyere, S Devoivre, T DeSalvo, B Vincent, E
Citation: G. Ghibaudo et al., Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics, IEEE SEMIC, 13(2), 2000, pp. 152-158
Investigation of charging/discharging phenomena in nano-crystal memories
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Baron, T
Citation: B. De Salvo et al., Investigation of charging/discharging phenomena in nano-crystal memories, SUPERLATT M, 28(5-6), 2000, pp. 339-344
Risultati: 1-25 | 26-50 | 51-53