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Results: 1-17 |
Results: 17
SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC
Authors: HEGDE RI MAITI B RAI RS REID KG TOBIN PJ
Citation: Ri. Hegde et al., SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC, Journal of the Electrochemical Society, 145(1), 1998, pp. 13-15
A LOW-TEMPERATURE COLLIMATED TITANIUM DEPOSITION PROCESS
Authors: HEGDE RI FIORDALICE RW KOLAR D
Citation: Ri. Hegde et al., A LOW-TEMPERATURE COLLIMATED TITANIUM DEPOSITION PROCESS, Journal of the Electrochemical Society, 144(5), 1997, pp. 1849-1854
GROWTH AND FILM CHARACTERISTICS OF N2O AND NO OXYNITRIDE GATE AND TUNNEL DIELECTRICS
Authors: HEGDE RI MAITI B TOBIN PJ
Citation: Ri. Hegde et al., GROWTH AND FILM CHARACTERISTICS OF N2O AND NO OXYNITRIDE GATE AND TUNNEL DIELECTRICS, Journal of the Electrochemical Society, 144(3), 1997, pp. 1081-1086
THIN-FILM PROPERTIES OF TUNGSTEN NUCLEATION LAYER IN BLANKET TUNGSTENDEPOSITION
Authors: HEGDE RI TOBIN PJ SITARAM AR KLEIN J
Citation: Ri. Hegde et al., THIN-FILM PROPERTIES OF TUNGSTEN NUCLEATION LAYER IN BLANKET TUNGSTENDEPOSITION, Journal of the Electrochemical Society, 144(3), 1997, pp. 1087-1090
EFFECT OF SILICON SUBSTRATE MICROROUGHNESS ON GATE OXIDE QUALITY
Authors: HEGDE RI CHONKO MA TOBIN PJ
Citation: Ri. Hegde et al., EFFECT OF SILICON SUBSTRATE MICROROUGHNESS ON GATE OXIDE QUALITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3299-3304
MEASUREMENT OF N IN NITRIDED OXIDES USING SPECTROSCOPIC IMMERSION ELLIPSOMETRY
Authors: IRENE EA LIU Q PAULSON WM TOBIN PJ HEGDE RI
Citation: Ea. Irene et al., MEASUREMENT OF N IN NITRIDED OXIDES USING SPECTROSCOPIC IMMERSION ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1697-1701
OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE
Authors: MAITI B TOBIN PJ OKADA Y REID KG AJURIA SA HEGDE RI KAUSHIK V
Citation: B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281
ORIENTATION CONTROL OF CHEMICAL-VAPOR-DEPOSITION TIN FILM FOR BARRIERAPPLICATIONS
Authors: FIORDALICE RW HEGDE RI KAWASAKI H
Citation: Rw. Fiordalice et al., ORIENTATION CONTROL OF CHEMICAL-VAPOR-DEPOSITION TIN FILM FOR BARRIERAPPLICATIONS, Journal of the Electrochemical Society, 143(6), 1996, pp. 2059-2063
SURFACE-TOPOGRAPHY OF PHOSPHORUS-DOPED POLYSILICON
Authors: HEGDE RI PAULSON WM TOBIN PJ
Citation: Ri. Hegde et al., SURFACE-TOPOGRAPHY OF PHOSPHORUS-DOPED POLYSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1434-1441
IMPROVED ATOMIC-FORCE MICROSCOPY IMAGING USING CARBON-COATED PROBE TIPS
Authors: DORIS BB HEGDE RI
Citation: Bb. Doris et Ri. Hegde, IMPROVED ATOMIC-FORCE MICROSCOPY IMAGING USING CARBON-COATED PROBE TIPS, Applied physics letters, 67(25), 1995, pp. 3816-3818
GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE
Authors: HEGDE RI TOBIN PJ REID KG MAITI B AJURIA SA
Citation: Ri. Hegde et al., GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE, Applied physics letters, 66(21), 1995, pp. 2882-2884
FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO)
Authors: OKADA Y TOBIN PJ REID KG HEGDE RI MAITI B AJURIA SA
Citation: Y. Okada et al., FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO), I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1608-1613
UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS
Authors: OKADA Y TABIN PJ REID KG HEGDE RI AJURIA SA
Citation: Y. Okada et al., UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS, Journal of the Electrochemical Society, 141(12), 1994, pp. 3500-3504
THIN-FILM PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TIN BARRIER FOR ULTRA-LARGE-SCALE INTEGRATION APPLICATIONS
Authors: HEGDE RI FIORDALICE RW TRAVIS EO TOBIN PJ
Citation: Ri. Hegde et al., THIN-FILM PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TIN BARRIER FOR ULTRA-LARGE-SCALE INTEGRATION APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1287-1296
EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION
Authors: OKADA Y TOBIN PJ LAKHOTIA V AJURIA SA HEGDE RI LIAO JC RUSHBROOK PP ARIAS LJ
Citation: Y. Okada et al., EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION, Journal of the Electrochemical Society, 140(6), 1993, pp. 87-89
RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O
Authors: OKADA Y TOBIN PJ LAKHOTIA V FEIL WA AJURIA SA HEGDE RI
Citation: Y. Okada et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O, Applied physics letters, 63(2), 1993, pp. 194-196
TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN
Authors: HEGDE RI FIORDALICE RW TOBIN PJ
Citation: Ri. Hegde et al., TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN, Applied physics letters, 62(19), 1993, pp. 2326-2328
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