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Results: 1-25/88
Authors:
DESCHLER M
SCHUMACHER M
WOELK E
SCHMITZ D
STRAUCH G
HEUKEN M
JUERGENSEN H
Citation: M. Deschler et al., DESIGN AND APPLICATION OF MULTIWAFER MOCVD SYSTEMS FOR FERROELECTRICS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 381-384
Authors:
GURSKII AL
LUTSENKO EV
YABLONSKII GP
HAMADEH H
KALISCH H
SCHINELLER B
HEUKEN M
Citation: Al. Gurskii et al., OPTICAL-PROPERTIES AND LASING OF ZNMGSSE ZNSSE/ZNSE HETEROSTRUCTURES GROWN BY MOVPE/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 22-25
Authors:
SCHINELLER B
JUNAS Y
HEUKEN M
HEIME K
Citation: B. Schineller et al., INVESTIGATION OF PROCESS TECHNOLOGIES FOR THE FABRICATION OF ALGAINP MESA ULTRA-HIGH BRIGHTNESS LIGHT-EMITTING DIODE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 34-38
Authors:
SCHAPERS T
ENGELS G
LUTH H
BEHET M
MOULIN D
KUSTERS AM
HEUKEN M
HEIME K
Citation: T. Schapers et al., MAGNETOTRANSPORT OF INAS-QUANTUM WELLS USING INP0.69SB0.31 AS A BARRIER MATERIAL, Superlattices and microstructures, 23(2), 1998, pp. 307-313
Authors:
GERMAIN M
EVRARD R
LAMPE E
HEUKEN M
Citation: M. Germain et al., ON THE DETERMINATION OF CHARGE PROFILES IN EPITAXIAL LAYERS OF ZNSE BY CAPACITANCE MEASUREMENTS, Journal of electronic materials, 27(5), 1998, pp. 29-31
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
SCHINELLER B
GUTTZEIT A
SCHON O
HEUKEN M
HEIME K
BECCARD R
SCHMITZ D
JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
Authors:
DREWS D
SCHNEIDER A
WERNINGHAUS T
BEHRES A
HEUKEN M
HEIME K
ZAHN DRT
Citation: D. Drews et al., CHARACTERIZATION OF MOVPE GROWN INPSB INAS HETEROSTRUCTURES/, Applied surface science, 123, 1998, pp. 746-750
Authors:
UMLAUFF M
HOFFMANN J
KALT H
LANGBEIN W
HVAM JM
SCHOLL M
SOLLNER J
HEUKEN M
JOBST B
HOMMEL D
Citation: M. Umlauff et al., DIRECT OBSERVATION OF FREE-EXCITON THERMALIZATION IN QUANTUM-WELL STRUCTURES, Physical review. B, Condensed matter, 57(3), 1998, pp. 1390-1393
Authors:
XU J
LIU Q
KALISCH H
WOITOK J
HEUKEN M
LAKNER H
Citation: J. Xu et al., STUDY OF STRUCTURAL-PROPERTIES OF MOVPE GROWN ZNMGSSE LAYER BY HRXRD AND CATHODOLUMINESCENCE, Thin solid films, 319(1-2), 1998, pp. 57-61
Authors:
LIU Q
LAKNER H
MENDORF C
TAUDT W
HEUKEN M
HEIME K
KUBALEK E
Citation: Q. Liu et al., THE INFLUENCE OF STRUCTURAL DEFECTS IN ZNSE GAAS HETEROSTRUCTURES ON LUMINESCENCE PROPERTIES/, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2421-2425
Authors:
TAUDT W
XU J
HARDT A
KORFER H
LIU Q
HAMADEH H
LAKNER H
WOITOK J
HEUKEN M
Citation: W. Taudt et al., OPTIMIZATION OF PRE-EPITAXIAL PROCESSES TO OBTAIN HIGH-QUALITY ZNSE GAAS HETEROINTERFACES GROWN IN A LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM/, Journal of crystal growth, 191(4), 1998, pp. 663-672
Authors:
XU XG
GIESEN C
HOVEL R
HEUKEN M
HEIME K
Citation: Xg. Xu et al., SURFACE-MORPHOLOGY AND GROWTH-RATE VARIATION OF INP ON PATTERNED SUBSTRATES USING TERTIARYBUTYLPHOSPHINE, Journal of crystal growth, 191(3), 1998, pp. 341-346
Authors:
SCHON O
SCHINELLER B
HEUKEN M
BECCARD R
Citation: O. Schon et al., COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN, Journal of crystal growth, 190, 1998, pp. 335-339
Authors:
VONEICHELSTREIBER C
SCHON O
BECCARD R
SCHMITZ D
HEUKEN M
JURGENSEN H
Citation: C. Voneichelstreiber et al., MOVPE GROWTH OF HIGH-QUALITY III-NITRIDE MATERIAL FOR LIGHT-EMITTING DEVICE APPLICATIONS IN A MULTIWAFER SYSTEM, Journal of crystal growth, 190, 1998, pp. 344-348
Authors:
ECKEY L
VONGFUG U
HOLST J
HOFFMANN A
SCHINELLER B
HEIME K
HEUKEN M
SCHON O
BECCARD R
Citation: L. Eckey et al., COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS, Journal of crystal growth, 190, 1998, pp. 523-527
Authors:
SCHINELLER B
GUTTZEIT A
VERTOMMEN F
SCHON O
HEUKEN M
HEIME K
BECCARD R
Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802
Authors:
BLANK HR
MATHIS S
HALL E
BHARGAVA S
BEHRES A
HEUKEN M
KROEMER H
NARAYANAMURTI V
Citation: Hr. Blank et al., AL(AS,SB) HETEROBARRIERS ON INAS - GROWTH, STRUCTURAL-PROPERTIES AND ELECTRICAL-TRANSPORT, Journal of crystal growth, 187(1), 1998, pp. 18-28
Authors:
KOZLOVSKY VI
KRYSA AB
KOROSTELIN YV
SHAPKIN PV
KALISCH H
LUENENBUERGER M
HEUKEN M
Citation: Vi. Kozlovsky et al., ZNSE ZNMGSSE QW STRUCTURES GROWN BY MOVPE ON ZNSE(100), ZNSE(511) ANDGAAS(100) SUBSTRATES/, Journal of crystal growth, 185, 1998, pp. 124-128
Authors:
KALISCH H
LUNENBURGER M
HAMADEH H
XU J
HEUKEN M
Citation: H. Kalisch et al., OPTIMIZED METALORGANIC VAPOR-PHASE EPITAXY OF ZNMGSSE HETEROSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 129-133
Authors:
XU J
LUNENBUGER M
KALISCH H
HAMADEH H
WOITOK J
HEUKEN M
Citation: J. Xu et al., STRUCTURAL CHARACTERIZATION OF MOVPE GROWN ZNMGSSE ZNSE HETEROSTRUCTURES BY HRXRD/, Journal of crystal growth, 185, 1998, pp. 134-138
Authors:
LIU Q
BROCKT G
MEINERT A
KALISCH H
HEUKEN M
LAKNER H
Citation: Q. Liu et al., STUDIES ON STRUCTURAL AND ELECTROOPTICAL PROPERTIES OF MOVPE-GROWN ZNMGSSE BY CATHODOLUMINESCENCE, Journal of crystal growth, 185, 1998, pp. 139-143
Authors:
SOLLNER J
DESCHLER M
JURGENSEN H
KALISCH H
TAUDT W
HAMADEH H
HEUKEN M
BLIESKE U
SAAD M
BAUKNECHT A
KAMPSCHULTE T
ALBERT J
LUXSTEINER MC
Citation: J. Sollner et al., PRODUCTION SCALE MOCVD GROWTH OF II-VI SEMICONDUCTORS, Journal of crystal growth, 185, 1998, pp. 158-162
Authors:
GERMAIN M
ELYACOUBI M
EVRARD R
TAUDT W
HEUKEN M
Citation: M. Germain et al., MEASUREMENTS OF TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT ON MOVPE-GROWN AU ZNSE/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 199-202
Authors:
KOZLOVSKY VI
KRYSA AB
TAUDT W
HEUKEN M
Citation: Vi. Kozlovsky et al., ELECTRON-BEAM ACTIVATION OF ACCEPTORS IN MOVPE ZNSE-N, Journal of crystal growth, 185, 1998, pp. 435-439
Authors:
KALT H
UMLAUFF M
KRAUSHAAR M
SCHOLL M
SOLLNER J
HEUKEN M
Citation: H. Kalt et al., SATURATION OF OPTICAL GAIN IN ZNSE HETEROSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 627-631