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Results: 1-25/26
Authors:
DUBECKY F
FORNARI R
DARMO J
PIKNA M
GOMBIA E
KREMPASKY M
PELFER PG
SEKACOVA M
HUDEK P
RUCEK M
Citation: F. Dubecky et al., ELECTRICAL AND DETECTION PROPERTIES OF PARTICLE DETECTORS BASED ON LEC SEMIINSULATING INP, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 408(2-3), 1998, pp. 491-495
Authors:
STANGL G
HUDEK P
KOSTIC I
RUDENAUER F
RANGELOW I
RIEDLING K
FALLMANN W
Citation: G. Stangl et al., MICRO-TECHNOLOGY OF DENSELY SPACED NONCONVENTIONAL PATTERNS FOR SPACEAPPLICATIONS, Microelectronic engineering, 42, 1998, pp. 187-190
Authors:
BRUENGER WH
BUSCHBECK H
CEKAN E
EDER S
FEDYNYSHYN TH
HERTLEIN WG
HUDEK P
KOSTIC I
LOESCHNER H
RANGELOW IW
TORKLER M
Citation: Wh. Bruenger et al., DUV RESIST UV-II HS APPLIED TO HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND TO MASKED ION-BEAM PROXIMITY AND REDUCTION PRINTING, Microelectronic engineering, 42, 1998, pp. 237-240
Authors:
GOTSZALK T
GRABIEC P
SHI F
DUMANIA P
HUDEK P
RANGELOW IW
Citation: T. Gotszalk et al., FABRICATION OF MULTIPURPOSE AFM SCM/SEP MICROPROBE WITH INTEGRATED PIEZORESISTIVE DEFLECTION SENSOR AND ISOLATED CONDUCTIVE TIP/, Microelectronic engineering, 42, 1998, pp. 477-480
Authors:
GIVARGIZOV EI
STEPANOVA AN
MASHKOVA ES
MOLCHANOV VA
SHI F
HUDEK P
RANGELOW IW
Citation: Ei. Givargizov et al., ULTRASHARP DIAMOND-COATED SILICON TIPS FOR SCANNING-PROBE DEVICES, Microelectronic engineering, 42, 1998, pp. 499-502
Authors:
CAMBEL V
ELIAS P
KUDELA R
OLEJNIKOVA B
NOVAK J
DURICA M
MAJOROS M
KVITKOVIC J
MOZOLOVA Z
HUDEK P
Citation: V. Cambel et al., PREPARATION, CHARACTERIZATION AND APPLICATION OF MICROSCOPIC LINEAR HALL PROBE ARRAYS, Solid-state electronics, 42(2), 1998, pp. 247-251
Authors:
HUDEK P
KOSTIC I
BELOV M
RANGELOW IW
SHI F
PAWLOWSKI G
SPIESS W
BUSCHBECK H
CEKAN E
EDER S
LOSCHNER H
Citation: P. Hudek et al., DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2550-2554
Authors:
BABIN S
HUDEK P
KOSTIC I
Citation: S. Babin et al., QUANTITATIVE MEASUREMENT OF THE RESIST HEATING IN A VARIABLE SHAPED ELECTRON LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 311-315
Authors:
GRABIEC PB
GOTSZALK T
SHI F
HUDEK P
DUMANIA P
RANGELOW IW
Citation: Pb. Grabiec et al., THE INTEGRATION OF CMOS WITH PLASMA-ENHANCED MICROMACHINING, Surface & coatings technology, 97(1-3), 1997, pp. 475-480
Authors:
BARTL W
FISCHER G
HUDEK P
JACHIMOWICZ A
URBAN G
Citation: W. Bartl et al., THE INFLUENCE OF POLARIZATION EFFECTS ON AN MSGC GLASS SUBSTRATE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 386(2-3), 1997, pp. 307-309
Authors:
PUM D
STANGL G
SPONER C
RIEDLING K
HUDEK P
FALLMANN W
SLEYTR UB
Citation: D. Pum et al., PATTERNING OF MONOLAYERS OF CRYSTALLINE S-LAYER PROTEINS ON A SILICONSURFACE BY DEEP-ULTRAVIOLET RADIATION, Microelectronic engineering, 35(1-4), 1997, pp. 297-300
Authors:
GRABIEC PB
SHI F
HUDEK P
GOTSZALK T
ZABROWSKI M
DUMANIA P
RANGELOW IW
Citation: Pb. Grabiec et al., SCANNING PROBE SHARP TIP FORMATION FOR IC INTEGRATION USING MESA TECHNIQUE, Microelectronic engineering, 35(1-4), 1997, pp. 329-332
Authors:
RANGELOW IW
SHI F
HUDEK P
KOSTIC I
HAMMEL E
LOSCHNER H
STENGL G
CEKAN E
Citation: Iw. Rangelow et al., SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 257-260
Authors:
HUDEK P
RANGELOW IW
KOSTIC I
MUNZEL N
DARAKTCHIEV I
Citation: P. Hudek et al., EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING, Microelectronic engineering, 30(1-4), 1996, pp. 309-312
Authors:
DAHM G
RANGELOW IW
HUDEK P
KOOPS HWP
Citation: G. Dahm et al., QUARTZ ETCHING FOR PHASE-SHIFTING MASKS, Microelectronic engineering, 27(1-4), 1995, pp. 263-266
Authors:
HUDEK P
RANGELOW IW
DARAKTCHIEV IS
KOSTIC I
Citation: P. Hudek et al., ON THE APPLICATION OF CHEMICALLY AMPLIFIED POSITIVE RESISTS TO MICROMACHINING, Microelectronic engineering, 27(1-4), 1995, pp. 401-404
Authors:
RANGELOW IW
HUDEK P
Citation: Iw. Rangelow et P. Hudek, MEMS FABRICATION BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE), Microelectronic engineering, 27(1-4), 1995, pp. 471-474
Authors:
HUDEK P
RANGELOW IW
DARAKTCHIEV IS
KOSTIC I
Citation: P. Hudek et al., E-BEAM AND RIE EXAMINATION OF CHEMICALLY AMPLIFIED POSITIVE-TONE RESIST CAMP6, Microelectronic engineering, 26(3-4), 1995, pp. 167-179
Authors:
RANGELOW IW
HUDEK P
SHI F
Citation: Iw. Rangelow et al., BULK MICROMACHINING OF SI BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE), Vacuum, 46(12), 1995, pp. 1361-1369
Authors:
RANGELOW IW
BORKOWICZ Z
HUDEK P
KOSTIC I
Citation: Iw. Rangelow et al., TRANSFER OF SINGLE-LAYER POSITIVE RESIST SUBMICROMETER AND NANOMETER STRUCTURES INTO SILICON, Microelectronic engineering, 25(1), 1994, pp. 49-66
Authors:
RANGELOW IW
HUDEK P
KOSTIC I
BORKOWICZ Z
STANGL G
Citation: Iw. Rangelow et al., SUBMICRO- AND NANOMETER E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING WITH SINGLE-LAYER CHEMICALLY AMPLIFIED NEGATIVE RESIST, Microelectronic engineering, 23(1-4), 1994, pp. 283-286
Authors:
BABIN SV
KOSTIC I
HUDEK P
Citation: Sv. Babin et al., EXPERIMENTAL INVESTIGATION OF THE RESIST HEATING EFFECT IN A VARIABLYSHAPED EBL SYSTEM, Microelectronic engineering, 21(1-4), 1993, pp. 173-176
Authors:
STANGL G
CEKAN E
ECKES C
FRIZA W
THALINGER F
BRUCKNER A
HUDEK P
FALLMANN W
Citation: G. Stangl et al., NEWLY DEVELOPED NOVOLAK-BASED RESIST MATERIALS FOR ION PROJECTION LITHOGRAPHY (IPL) WITH STRUCTURE DIMENSIONS OF 200-100 NANOMETERS, Microelectronic engineering, 21(1-4), 1993, pp. 245-250
Authors:
HUDEK P
BORKOWICZ Z
KOSTIC I
RANGELOW IW
KASSING R
Citation: P. Hudek et al., SINGLE-LAYER RESIST FOR DEEP, MICROMETER AND NANOMETER STRUCTURE TRANSFER, Microelectronic engineering, 21(1-4), 1993, pp. 283-288
Authors:
SAFRANKOVA J
PORGES M
LALINSKY T
MOZOLOVA Z
HUDEK P
KOSTIC I
KRAUS J
VONWENDORFF W
TEGUDE FJ
JAGER D
Citation: J. Safrankova et al., PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 140(2), 1993, pp. 111-114