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Results: 1-25 |
Results: 25
Effects of annealing on tantalum pentoxide films in N-2 and N2O gas environments
Authors: Houng, MP Wang, YH Horng, JH Huang, RC
Citation: Mp. Houng et al., Effects of annealing on tantalum pentoxide films in N-2 and N2O gas environments, JPN J A P 1, 40(8), 2001, pp. 5079-5084
Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides
Authors: Chang, WJ Houng, MP Wang, YF
Citation: Wj. Chang et al., Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides, JPN J A P 1, 40(3A), 2001, pp. 1300-1305
Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask
Authors: Wu, JY Wang, HH Wang, YH Houng, MP
Citation: Jy. Wu et al., Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask, IEEE ELEC D, 22(1), 2001, pp. 2-4
Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method
Authors: Wu, JY Sze, PW Deng, YM Huang, GW Wang, YH Houng, MP
Citation: Jy. Wu et al., Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method, SOL ST ELEC, 45(5), 2001, pp. 635-638
Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET
Authors: Wu, JY Sze, PW Wang, YH Houng, MP
Citation: Jy. Wu et al., Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET, SOL ST ELEC, 45(12), 2001, pp. 1999-2003
Electrical properties and modeling of ultrathin impurity-doped silicon dioxides
Authors: Chang, WJ Houng, MP Wang, YH
Citation: Wj. Chang et al., Electrical properties and modeling of ultrathin impurity-doped silicon dioxides, J APPL PHYS, 90(10), 2001, pp. 5171-5179
Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps andelectron energy loss
Authors: Chang, WJ Houng, MP Wang, YH
Citation: Wj. Chang et al., Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps andelectron energy loss, J APPL PHYS, 89(11), 2001, pp. 6285-6293
GaAs MOSFET's fabrication with a selective liquid phase oxidized gate
Authors: Wu, JY Wang, HH Wang, YH Houng, MP
Citation: Jy. Wu et al., GaAs MOSFET's fabrication with a selective liquid phase oxidized gate, IEEE DEVICE, 48(4), 2001, pp. 634-637
Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique
Authors: Wang, HH Chou, DW Wu, JY Wang, YH Houng, MP
Citation: Hh. Wang et al., Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique, JPN J A P 1, 39(7B), 2000, pp. 4477-4480
Quality optimization of liquid phase deposition SiO2 films on gallium arsenide
Authors: Houng, MP Wang, YH Huang, CJ Huang, SP Horng, JH
Citation: Mp. Houng et al., Quality optimization of liquid phase deposition SiO2 films on gallium arsenide, SOL ST ELEC, 44(11), 2000, pp. 1917-1923
The dark current caused by the field-induced mixing effect on bound-to-continuum quantum-well infrared photodetectors
Authors: Chong, KK Houng, MP Wang, YH Chu, CH Hung, CI
Citation: Kk. Chong et al., The dark current caused by the field-induced mixing effect on bound-to-continuum quantum-well infrared photodetectors, J PHYS D, 33(2), 2000, pp. 162-169
Heat generation approximation in modulation-doped field-effect transistorsby the energy relaxation between carriers and phonons
Authors: Houng, MP Wang, YH Chong, KK Chu, CH Hung, CI Miaw, JW
Citation: Mp. Houng et al., Heat generation approximation in modulation-doped field-effect transistorsby the energy relaxation between carriers and phonons, J APPL PHYS, 88(5), 2000, pp. 2553-2559
Effect of crystal orientation and doping on the activation energy for GaAsoxide growth by liquid phase method
Authors: Wang, HH Chou, DW Wu, JY Wang, YH Houng, MP
Citation: Hh. Wang et al., Effect of crystal orientation and doping on the activation energy for GaAsoxide growth by liquid phase method, J APPL PHYS, 87(5), 2000, pp. 2629-2633
Effect of surface treatments on the electrical properties of fluorinated silicon oxides
Authors: Chang, WJ Houng, MP Wang, YH
Citation: Wj. Chang et al., Effect of surface treatments on the electrical properties of fluorinated silicon oxides, J ELCHEM SO, 147(9), 2000, pp. 3467-3471
CO2 laser annealing on fluorinated silicon oxide films
Authors: Wang, NF Houng, MP Wang, YH
Citation: Nf. Wang et al., CO2 laser annealing on fluorinated silicon oxide films, JPN J A P 1, 38(9A), 1999, pp. 5227-5231
Fourier transform infrared characterization of moisture absorption in SiOFfilms
Authors: Chang, WJ Houng, MP Wang, YH
Citation: Wj. Chang et al., Fourier transform infrared characterization of moisture absorption in SiOFfilms, JPN J A P 1, 38(8), 1999, pp. 4642-4647
Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition
Authors: Wang, NF Houng, MP Wang, YH
Citation: Nf. Wang et al., Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition, JPN J A P 1, 38(10), 1999, pp. 6071-6072
A GaAs MOSFET with a liquid phase oxidized gate
Authors: Wu, JY Wang, HH Wang, YH Houng, MP
Citation: Jy. Wu et al., A GaAs MOSFET with a liquid phase oxidized gate, IEEE ELEC D, 20(1), 1999, pp. 18-20
Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method
Authors: Wang, NF Chang, WJ Houng, MP Wang, YH Huang, CJ
Citation: Nf. Wang et al., Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method, J VAC SCI A, 17(1), 1999, pp. 102-107
Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique
Authors: Wang, HH Chou, DW Wang, YH Houng, MP
Citation: Hh. Wang et al., Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique, PHYS SCR, T79, 1999, pp. 239-242
Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO2 layer
Authors: Houng, MP Wang, YH Wang, NF Chang, WJ Hung, CI
Citation: Mp. Houng et al., Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO2 layer, MATER CH PH, 59(1), 1999, pp. 36-41
Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's
Authors: Chiang, TK Wang, YH Houng, MP
Citation: Tk. Chiang et al., Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's, SOL ST ELEC, 43(1), 1999, pp. 123-129
Current transport mechanism in trapped oxides: A generalized trap-assistedtunneling model
Authors: Houng, MP Wang, YH Chang, WJ
Citation: Mp. Houng et al., Current transport mechanism in trapped oxides: A generalized trap-assistedtunneling model, J APPL PHYS, 86(3), 1999, pp. 1488-1491
Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method
Authors: Huang, CJ Houng, MP Wang, YH Wang, HH
Citation: Cj. Huang et al., Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method, J APPL PHYS, 86(12), 1999, pp. 7151-7155
Effects of pH values on the kinetics of liquid-phase chemical-enhanced oxidation of GaAs
Authors: Wang, HH Wu, JY Wang, YH Houng, MP
Citation: Hh. Wang et al., Effects of pH values on the kinetics of liquid-phase chemical-enhanced oxidation of GaAs, J ELCHEM SO, 146(6), 1999, pp. 2328-2332
Risultati: 1-25 |