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Results: 1-25 | 26-26
Results: 1-25/26
PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/
Authors: GREKHOV IV VEKSLER MI IVANOV PA SAMSONOVA TP SHULEKIN AF
Citation: Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
MAGNETIC-FLUX LEAKAGE MODELING FOR MECHANICAL DAMAGE IN TRANSMISSION PIPELINES
Authors: IVANOV PA ZHANG Z YEOH CH UDPA L SUN Y UDPA SS LORD W
Citation: Pa. Ivanov et al., MAGNETIC-FLUX LEAKAGE MODELING FOR MECHANICAL DAMAGE IN TRANSMISSION PIPELINES, IEEE transactions on magnetics, 34(5), 1998, pp. 3020-3023
DEEP SURFACE-STATES ON THE INTERFACE BETWEEN SIC AND ITS NATIVE THERMAL OXIDE
Authors: IVANOV PA IGNATEV KI PANTELEEV VN SAMSONOVA TP
Citation: Pa. Ivanov et al., DEEP SURFACE-STATES ON THE INTERFACE BETWEEN SIC AND ITS NATIVE THERMAL OXIDE, Technical physics letters, 23(10), 1997, pp. 798-800
INFLUENCE OF PLASMA TREATMENT OF THE SURFACE OF SILICON-CARBIDE ON THE CHARACTERISTICS OF BURIED-GATE JUNCTION FIELD-EFFECT TRANSISTORS
Authors: IVANOV PA KONKOV OI PANTELEEV VN SAMSONOVA TP
Citation: Pa. Ivanov et al., INFLUENCE OF PLASMA TREATMENT OF THE SURFACE OF SILICON-CARBIDE ON THE CHARACTERISTICS OF BURIED-GATE JUNCTION FIELD-EFFECT TRANSISTORS, Semiconductors, 31(11), 1997, pp. 1212-1215
GENOME OF NEW TOBAMOVIRUS CONTAINS THE IN TERNAL RIBOSOME ENTRY SITE
Authors: DOROKHOV YL IVANOV PA KARPOVA OV SKULACHEV MV RODIONOVA NA FROLOVA OY BORISOVA OV ATABEKOV IG
Citation: Yl. Dorokhov et al., GENOME OF NEW TOBAMOVIRUS CONTAINS THE IN TERNAL RIBOSOME ENTRY SITE, Doklady Akademii nauk. Rossijskaa akademia nauk, 357(4), 1997, pp. 547-549
HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE
Authors: KONSTANTINOV AO IVANOV PA NORDELL N KARLSSON S HARRIS CI
Citation: Ao. Konstantinov et al., HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE, IEEE electron device letters, 18(11), 1997, pp. 521-522
A TOBAMOVIRUS GENOME THAT CONTAINS AN INTERNAL RIBOSOME ENTRY SITE FUNCTIONAL IN-VITRO
Authors: IVANOV PA KARPOVA OV SKULACHEV MV TOMASHEVSKAYA OL RODIONOVA NP DOROKHOV YL ATABEKOV JG
Citation: Pa. Ivanov et al., A TOBAMOVIRUS GENOME THAT CONTAINS AN INTERNAL RIBOSOME ENTRY SITE FUNCTIONAL IN-VITRO, Virology, 232(1), 1997, pp. 32-43
APPEARANCE OF BETA-PHASE CRYSTALLITES IN POROUS LAYERS OF SILICON-CARBIDE
Authors: DANISHEVSKII AM SHUMAN VB ROGACHEV AY GUK EG IVANOV PA MALTSEV AA
Citation: Am. Danishevskii et al., APPEARANCE OF BETA-PHASE CRYSTALLITES IN POROUS LAYERS OF SILICON-CARBIDE, Semiconductors, 30(6), 1996, pp. 564-567
STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE
Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP CHELNOKOV VE
Citation: Pa. Ivanov et al., STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE, Semiconductors, 29(2), 1995, pp. 135-137
INVESTIGATION OF POROUS SILICON-CARBIDE BY METHODS OF VIBRATIONAL ANDLUMINESCENCE SPECTROSCOPY
Authors: DANISHEVSKII AM SHUMAN VB ROGACHEV AY IVANOV PA
Citation: Am. Danishevskii et al., INVESTIGATION OF POROUS SILICON-CARBIDE BY METHODS OF VIBRATIONAL ANDLUMINESCENCE SPECTROSCOPY, Semiconductors, 29(12), 1995, pp. 1106-1111
SEMICONDUCTOR SILICON-CARBIDE - TECHNOLOGY AND DEVICES - A REVIEW
Authors: IVANOV PA CHELNOKOV VE
Citation: Pa. Ivanov et Ve. Chelnokov, SEMICONDUCTOR SILICON-CARBIDE - TECHNOLOGY AND DEVICES - A REVIEW, Semiconductors, 29(11), 1995, pp. 1003-1013
HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V
Authors: ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM
Authors: IVANOV PA ZELENIN VV DANISHEVSKII AM STAROBINETS SG CHELNOKOV VE
Citation: Pa. Ivanov et al., PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 1-9
FIELD-EFFECT TRANSISTOR BASED ON 6H-SIC - TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE N-TYPE CHANNEL
Authors: IVANOV PA
Citation: Pa. Ivanov, FIELD-EFFECT TRANSISTOR BASED ON 6H-SIC - TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE N-TYPE CHANNEL, Semiconductors, 28(7), 1994, pp. 662-667
CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE
Authors: IVANOV PA KONSTANTINOV AO PANTELEEV VN SAMSONOVA TP CHELNOKOV VE
Citation: Pa. Ivanov et al., CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE, Semiconductors, 28(7), 1994, pp. 668-672
DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM
Authors: ANDREEV AN IVANOV PA STRELCHUK AM SAVKINA NS CHELNOKOV VE SHAPOSHNIKOV IR
Citation: An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
PASSIVATION OF CRYSTALLINE SILICON-CARBIDE IN A HYDROGEN PLASMA
Authors: KONSTANTINOV AO KONSTANTINOVA NS KONKOV OI TERUKOV EI IVANOV PA
Citation: Ao. Konstantinov et al., PASSIVATION OF CRYSTALLINE SILICON-CARBIDE IN A HYDROGEN PLASMA, Semiconductors, 28(2), 1994, pp. 209-210
SURFACE CAPACITANCE OF A SEMICONDUCTOR WITH A DEEP DOPANT (IN THE EXAMPLE OF P-6H-SIC(B))
Authors: ELFIMOV LB IVANOV PA
Citation: Lb. Elfimov et Pa. Ivanov, SURFACE CAPACITANCE OF A SEMICONDUCTOR WITH A DEEP DOPANT (IN THE EXAMPLE OF P-6H-SIC(B)), Semiconductors, 28(1), 1994, pp. 97-100
THE TOBAMOVIRUS OF THE CRUCIFERAE FAMILY - THE NUCLEOTIDE-SEQUENCE OF5' NONTRANSLATED REGION AND NONSTRUCTURAL PROTEINS GENES, CONTROLLINGVIRUS GENOME REPLICATION
Authors: DOROKHOV YL IVANOV PA NOVIKOV VK EFIMOV VA ATABEKOV IG
Citation: Yl. Dorokhov et al., THE TOBAMOVIRUS OF THE CRUCIFERAE FAMILY - THE NUCLEOTIDE-SEQUENCE OF5' NONTRANSLATED REGION AND NONSTRUCTURAL PROTEINS GENES, CONTROLLINGVIRUS GENOME REPLICATION, Doklady Akademii nauk. Rossijskaa akademia nauk, 335(6), 1994, pp. 792-798
CLONING OF THE MOVEMENT PROTEIN GENES OF 2 STRAINS OF TOBACCO MOSAIC-VIRUS AND THEIR EXPRESSION IN ESCHERICHIA-COLI-CELLS
Authors: IVANOV KI IVANOV PA TIMOFEEVA EK EFIMOV VA DOROKHOV YL
Citation: Ki. Ivanov et al., CLONING OF THE MOVEMENT PROTEIN GENES OF 2 STRAINS OF TOBACCO MOSAIC-VIRUS AND THEIR EXPRESSION IN ESCHERICHIA-COLI-CELLS, Bioorganiceskaa himia, 20(7), 1994, pp. 751-758
DETECTION OF THE MAGNETIZATION OF A FERROMAGNETIC FILM IN A NI GAAS STRUCTURE FROM THE POLARIZATION OF ELECTRONS OF THE SEMICONDUCTOR/
Authors: DZHIOEV RI ZAKHARCHENYA BP IVANOV PA KORENEV VL
Citation: Ri. Dzhioev et al., DETECTION OF THE MAGNETIZATION OF A FERROMAGNETIC FILM IN A NI GAAS STRUCTURE FROM THE POLARIZATION OF ELECTRONS OF THE SEMICONDUCTOR/, JETP letters, 60(9), 1994, pp. 661-665
COMPLETE NUCLEOTIDE-SEQUENCE AND GENOME ORGANIZATION OF A TOBAMOVIRUSINFECTING CRUCIFERAE PLANTS
Authors: DOROKHOV YL IVANOV PA NOVIKOV VK AGRANOVSKY AA MOROZOV SY EFIMOV VA CASPER R ATABEKOV JG
Citation: Yl. Dorokhov et al., COMPLETE NUCLEOTIDE-SEQUENCE AND GENOME ORGANIZATION OF A TOBAMOVIRUSINFECTING CRUCIFERAE PLANTS, FEBS letters, 350(1), 1994, pp. 5-8
THE IMMOBILIZED MOVEMENT PROTEINS OF 2 TOBAMOVIRUSES FORM STABLE RIBONUCLEOPROTEIN COMPLEXES WITH FULL-LENGTH VIRAL GENOMIC RNA
Authors: IVANOV KI IVANOV PA TIMOFEEVA EK DOROKHOV YL ATABEKOV JG
Citation: Ki. Ivanov et al., THE IMMOBILIZED MOVEMENT PROTEINS OF 2 TOBAMOVIRUSES FORM STABLE RIBONUCLEOPROTEIN COMPLEXES WITH FULL-LENGTH VIRAL GENOMIC RNA, FEBS letters, 346(2-3), 1994, pp. 217-220
METAL-OXIDE-SEMICONDUCTOR CAPACITOR FORMED FROM THERMALLY OXIDIZED N-TYPE 6H-SIC WITH THE (000(1)OVER-BAR)C ORIENTATION
Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP SUVOROV AV CHELNOKOV VE
Citation: Pa. Ivanov et al., METAL-OXIDE-SEMICONDUCTOR CAPACITOR FORMED FROM THERMALLY OXIDIZED N-TYPE 6H-SIC WITH THE (000(1)OVER-BAR)C ORIENTATION, Semiconductors, 27(7), 1993, pp. 631-635
EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH
Authors: ANIKIN MM IVANOV PA RASTEGAEV VP SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH, Semiconductors, 27(1), 1993, pp. 53-56
Risultati: 1-25 | 26-26