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Results: 1-22 |
Results: 22
Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects
Authors: Yakovlev, YP Danilova, AP Imenkov, AN Kolchanova, NM Sherstnev, VV
Citation: Yp. Yakovlev et al., Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects, PHI T ROY A, 359(1780), 2001, pp. 523-531
Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs
Authors: Romanov, VV Ivanov, EV Imenkov, AN Kolchanova, NM Moiseev, KD Stoyanov, ND Yakovlev, YP
Citation: Vv. Romanov et al., Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs, TECH PHYS L, 27(7), 2001, pp. 611-614
High-efficiency 3.4-4.4 mu m light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature
Authors: Zhurtanov, B Ivanov, EV Imenkov, AN Kolchanova, NM Rozov, AE Stoyanov, N Yakovlev, YP
Citation: B. Zhurtanov et al., High-efficiency 3.4-4.4 mu m light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature, TECH PHYS L, 27(3), 2001, pp. 173-175
Current-tunable lasers with a narrow emission line operating at 3.3 mu m
Authors: Imenkov, AN Kolchanova, NM Kubat, P Moiseev, KD Civis, C Yakovlev, YP
Citation: An. Imenkov et al., Current-tunable lasers with a narrow emission line operating at 3.3 mu m, SEMICONDUCT, 35(3), 2001, pp. 360-364
InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range
Authors: Danilova, TN Imenkov, AN Kolchanova, NM Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range, SEMICONDUCT, 35(12), 2001, pp. 1404-1417
The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1))
Authors: Imenkov, AN Kolchanova, NM Yakovlev, YP Kubat, P Civis, S
Citation: An. Imenkov et al., The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1)), REV SCI INS, 72(4), 2001, pp. 1988-1992
A tunable single-mode 3.2 mu m laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm(-1)
Authors: Civis, S Imenkov, AN Danilova, AP Kolchanova, NM Sherstnev, VV Yakovlev, YP Walters, AD
Citation: S. Civis et al., A tunable single-mode 3.2 mu m laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm(-1), SPECT ACT A, 56(11), 2000, pp. 2125-2130
Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane
Authors: Astakhova, AP Danilova, TN Imenkov, AN Kolchanova, NM Sherstnev, VV Yakovlev, YP
Citation: Ap. Astakhova et al., Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane, SEMICONDUCT, 34(9), 2000, pp. 1100-1102
Single-mode InAsSb/InAsSbP laser (lambda approximate to 3.2 mu m) tunable over 100 angstrom
Authors: Danilova, AP Imenkov, AN Kolchanova, NM Civis, S Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Single-mode InAsSb/InAsSbP laser (lambda approximate to 3.2 mu m) tunable over 100 angstrom, SEMICONDUCT, 34(2), 2000, pp. 237-242
Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers
Authors: Imenkov, AN Kolchanova, NM Kubat, P Civish, S Yakovlev, YP
Citation: An. Imenkov et al., Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers, SEMICONDUCT, 34(12), 2000, pp. 1406-1409
InAsSb/InAsSbP double-heterostructure lasers emitting at 3-4 mu m: Part I
Authors: Danilova, TN Imenkov, AN Sherstnev, VV Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP double-heterostructure lasers emitting at 3-4 mu m: Part I, SEMICONDUCT, 34(11), 2000, pp. 1343-1350
Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m
Authors: Civis, S Imenkov, AN Danilova, AP Kolchanova, NM Sherstnev, VV Yakovlev, YP Walters, AD
Citation: S. Civis et al., Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m, APP PHYS B, 71(4), 2000, pp. 481-485
Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers due to nonlinear optical effects
Authors: Danilova, AP Imenkov, AN Danilova, TN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers due to nonlinear optical effects, SPECT ACT A, 55(10), 1999, pp. 2077-2082
AlGaAsSb lasers emitting in the 1.6 mu m region
Authors: Danilova, TN Zhurtanov, BE Imenkov, AN Sipovskaya, MA Yakovlev, YP
Citation: Tn. Danilova et al., AlGaAsSb lasers emitting in the 1.6 mu m region, TECH PHYS L, 25(5), 1999, pp. 395-397
InAsSb/InAsSbP heterostructure lasers with a large range of current tuningof the lasing frequency
Authors: Danilova, TN Danilova, AP Imenkov, AN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP heterostructure lasers with a large range of current tuningof the lasing frequency, TECH PHYS L, 25(10), 1999, pp. 766-768
Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
Authors: Danilova, AP Danilova, TN Imenkov, AN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity, SEMICONDUCT, 33(9), 1999, pp. 991-995
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
Authors: Danilova, AP Danilova, TN Imenkov, AN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions, SEMICONDUCT, 33(8), 1999, pp. 924-928
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
Authors: Zegrya, GG Mikhailova, MP Danilova, TN Imenkov, AN Moiseev, KD Sherstnev, VV Yakovlev, YP
Citation: Gg. Zegrya et al., Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions, SEMICONDUCT, 33(3), 1999, pp. 350-354
High-power light-emitting diodes operating in the 1.9 to 2.1-mu m spectralrange
Authors: Danilova, TN Zhurtanov, BE Zakgeim, AL Il'inskaya, ND Imenkov, AN Saraev, ON Sipovskaya, MA Sherstnev, VV Yakovlev, YP
Citation: Tn. Danilova et al., High-power light-emitting diodes operating in the 1.9 to 2.1-mu m spectralrange, SEMICONDUCT, 33(2), 1999, pp. 206-209
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 mu m) due to nonlinear optical effects
Authors: Danilova, AP Danilova, TN Imenkov, AN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 mu m) due to nonlinear optical effects, SEMICONDUCT, 33(2), 1999, pp. 210-215
Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 mu m
Authors: Danilova, AP Imenkov, AN Kolchanova, NM Sherstnev, VV Yakovlev, YP Civis, S
Citation: Ap. Danilova et al., Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 mu m, SEMICONDUCT, 33(12), 1999, pp. 1322-1327
Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers using nonlinear optical effects
Authors: Danilova, AP Imenkov, AN Danilova, TN Kolchanova, NM Stepanov, MV Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers using nonlinear optical effects, IEE P-OPTO, 145(5), 1998, pp. 261-264
Risultati: 1-22 |