AAAAAA
Results: 51-75/81
Authors:
Deenapanray, PNK
Tan, HH
Cohen, MI
Gaff, K
Petravic, M
Jagadish, C
Citation: Pnk. Deenapanray et al., Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells, J ELCHEM SO, 147(5), 2000, pp. 1950-1956
Authors:
Toth, M
Kucheyev, SO
Williams, JS
Jagadish, C
Phillips, MR
Li, G
Citation: M. Toth et al., Imaging charge trap distributions in GaN using environmental scanning electron microscopy, APPL PHYS L, 77(9), 2000, pp. 1342-1344
Authors:
Babinski, A
Siwiec-Matuszyk, J
Baranowski, JM
Li, G
Jagadish, C
Citation: A. Babinski et al., Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy, APPL PHYS L, 77(7), 2000, pp. 999-1001
Authors:
Deenapanray, PNK
Tan, HH
Jagadish, C
Auret, FD
Citation: Pnk. Deenapanray et al., Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition, APPL PHYS L, 77(5), 2000, pp. 696-698
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced dissociation and bubble formation in GaN, APPL PHYS L, 77(22), 2000, pp. 3577-3579
Authors:
Kucheyev, SO
Bradby, JE
Williams, JS
Jagadish, C
Toth, M
Phillips, MR
Swain, MV
Citation: So. Kucheyev et al., Nanoindentation of epitaxial GaN films, APPL PHYS L, 77(21), 2000, pp. 3373-3375
Authors:
Hegeler, F
Manasreh, MO
Morath, C
Ballet, P
Yang, H
Salamo, GJ
Tan, HH
Jagadish, C
Citation: F. Hegeler et al., Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells, APPL PHYS L, 77(18), 2000, pp. 2867-2869
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Craig, VSJ
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced porosity of GaN, APPL PHYS L, 77(10), 2000, pp. 1455-1457
Authors:
Fu, L
Deenapanray, PNK
Tan, HH
Jagadish, C
Dao, LV
Gal, M
Citation: L. Fu et al., Quality of silica capping layer and its influence on quantum-well intermixing, APPL PHYS L, 76(7), 2000, pp. 837-839
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Li, G
Pearton, SJ
Citation: So. Kucheyev et al., Strong surface disorder and loss of N produced by ion bombardment of GaN, APPL PHYS L, 76(26), 2000, pp. 3899-3901
Authors:
Marcinkevicius, S
Jagadish, C
Tan, HH
Kaminska, M
Korona, K
Adomavicius, R
Krotkus, A
Citation: S. Marcinkevicius et al., Influence of annealing on carrier dynamics in As ion-implanted epitaxiallylifted-off GaAs layers, APPL PHYS L, 76(10), 2000, pp. 1306-1308
Authors:
Tan, HH
Yuan, S
Gal, M
Jagadish, C
Citation: Hh. Tan et al., Quantum well intermixing by ion implantation and anodic oxidation, OPTOEL PROP, 8, 2000, pp. 307-338
Authors:
Liu, XQ
Li, N
Chen, XS
Lu, W
Xu, WL
Yuan, XZ
Li, N
Shen, SC
Yuan, S
Tan, HH
Jagadish, C
Citation: Xq. Liu et al., Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion, JPN J A P 1, 38(9A), 1999, pp. 5044-5045
Authors:
Fu, Y
Willander, M
Liu, XQ
Lu, W
Shen, SC
Tan, HH
Yuan, S
Jagadish, C
Citation: Y. Fu et al., Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire, SUPERLATT M, 26(5), 1999, pp. 307-315
Authors:
Li, N
Li, N
Lu, W
Liu, XQ
Yuan, XZ
Li, ZF
Dou, HF
Shen, SC
Fu, Y
Willander, M
Fu, L
Tan, HH
Jagadish, C
Johnston, MB
Gal, M
Citation: N. Li et al., Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors, SUPERLATT M, 26(5), 1999, pp. 317-324
Authors:
Lederer, MJ
Luther-Davies, B
Tan, HH
Jagadish, C
Akhmediev, NN
Soto-Crespo, JM
Citation: Mj. Lederer et al., Multipulse operation of a Ti : sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror, J OPT SOC B, 16(6), 1999, pp. 895-904
Authors:
Laird, JS
Bardos, RA
Jagadish, C
Jamieson, DN
Legge, GJF
Citation: Js. Laird et al., Scanning ion deep level transient spectroscopy, NUCL INST B, 158(1-4), 1999, pp. 464-469
Authors:
Zhao, QX
Willander, M
Holtz, PO
Lu, W
Dou, HF
Shen, SC
Li, G
Jagadish, C
Citation: Qx. Zhao et al., Radiative recombination in p-type delta-doped layers in GaAs, PHYS REV B, 60(4), 1999, pp. R2193-R2196
Authors:
Fu, L
Tan, HH
Johnston, MB
Gal, M
Jagadish, C
Citation: L. Fu et al., Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers, J APPL PHYS, 85(9), 1999, pp. 6786-6789
Authors:
Fatima, S
Jagadish, C
Lalita, J
Svensson, BG
Hallen, A
Citation: S. Fatima et al., Hydrogen interaction with implantation induced point defects in p-type silicon, J APPL PHYS, 85(5), 1999, pp. 2562-2567
Authors:
Cohen, MI
Tan, HH
Jagadish, C
Citation: Mi. Cohen et al., Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators, J APPL PHYS, 85(11), 1999, pp. 7964-7966
Authors:
Iordache, G
Buda, M
Acket, GA
van de Roer, TG
Kaufmann, LMF
Karouta, F
Jagadish, C
Tan, HH
Citation: G. Iordache et al., High power CW output from low confinement asymmetric structure diode laser, ELECTR LETT, 35(2), 1999, pp. 148-149
Authors:
Karouta, F
Tan, HH
Jagadish, C
van Roy, BH
Citation: F. Karouta et al., Vertical integration of dual wavelength index guided lasers, ELECTR LETT, 35(10), 1999, pp. 815-817
Authors:
Johnston, MB
Gal, M
Li, N
Chen, ZH
Liu, XQ
Li, N
Lu, W
Shen, SC
Fu, L
Tan, HH
Jagadish, C
Citation: Mb. Johnston et al., Interdiffused quantum-well infrared photodetectors for color sensitive arrays, APPL PHYS L, 75(7), 1999, pp. 923-925
Authors:
Manasreh, MO
Ballet, P
Smathers, JB
Salamo, GJ
Jagadish, C
Citation: Mo. Manasreh et al., Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers, APPL PHYS L, 75(4), 1999, pp. 525-527