Citation: Oa. Golikova et al., STAEBLER-WRONSKI EFFECT AS A FUNCTION OF THE FERMI-LEVEL POSITION ANDSTRUCTURE OF NONDOPED, AMORPHOUS, HYDRATED SILICON, Semiconductors, 32(4), 1998, pp. 434-438
Authors:
KUROVA IA
ORMONT NN
GOLIKOVA OA
KAZANIN MM
Citation: Ia. Kurova et al., RELAXATION OF PHOTOINDUCED METASTABLE STATES IN A-SI-H FILMS DEPOSITED AT HIGH-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1134-1136
Authors:
GOLIKOVA OA
KUZNETSOV AN
KUDOYAROVA VK
KAZANIN MM
Citation: Oa. Golikova et al., CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD, Semiconductors, 31(7), 1997, pp. 691-694
Authors:
GOLIKOVA OA
KUZNETSOV AN
KUDOYAROVA VK
KAZANIN MM
Citation: Oa. Golikova et al., A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION, Semiconductors, 30(10), 1996, pp. 983-985