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Results: 1-25/27
Authors:
LOHNER T
KHANH NQ
ZOLNAI Z
Citation: T. Lohner et al., SPECTROELLIPSOMETRIC CHARACTERIZATION OF ION-IMPLANTED SEMICONDUCTORSAND POROUS SILICON, Acta physica slovaca, 48(4), 1998, pp. 441-450
Authors:
PETRIK P
POLGAR O
LOHNER T
FRIED M
KHANH NQ
GYULAI J
Citation: P. Petrik et al., ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 50(3-4), 1998, pp. 293-297
Authors:
MOHACSY T
KHANH NQ
ADAM M
GYULAI J
Citation: T. Mohacsy et al., MODIFIED C-T TECHNIQUE FOR DETERMINING THE GENERATION LIFETIME PROFILE IN MEV HE+ IMPLANTED, Vacuum, 50(3-4), 1998, pp. 399-401
Authors:
LOHNER T
PETRIK P
POLGAR O
KHANH NQ
FRIED M
GYULAI J
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Vacuum, 50(3-4), 1998, pp. 487-490
Authors:
PETO G
MOLNAR GL
HORVATH ZE
ZSOLDOS E
KHANH NQ
GYULAI J
KANSKI J
Citation: G. Peto et al., FORMATION OF EPITAXIAL HOSI2 LAYER ON SI(100), Thin solid films, 318(1-2), 1998, pp. 168-171
Authors:
MOLNAR GL
PETO G
ZSOLDOS E
KHANH NQ
HORVATH ZE
Citation: Gl. Molnar et al., AMORPHOUS ALLOY FORMATION AND THICKNESS DEPENDENT GROWTH OF GD-SILICIDES IN SOLID-PHASE THIN-FILM REACTION, Thin solid films, 317(1-2), 1998, pp. 417-420
Authors:
LOHNER T
KHANH NQ
PETRIK P
BIRO LP
FRIED M
PINTER I
LEHNERT W
FREY L
RYSSEL H
WENTINK DJ
GYULAI J
Citation: T. Lohner et al., SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION, Thin solid films, 313, 1998, pp. 254-258
Authors:
DUNG HT
KHANH NQ
Citation: Ht. Dung et Nq. Khanh, RESONANCE FLUORESCENCE IN A SQUEEZED THERMAL VACUUM, J. mod. opt., 44(8), 1997, pp. 1497-1509
Authors:
KHANH NQ
TUTTO P
BUIU O
JAROLI EN
BIRO LP
MANUABA A
GYULAI J
Citation: Nq. Khanh et al., CHARGE-CARRIER LIFETIME MODIFICATION IN SILICON BY HIGH-ENERGY H-IMPLANTATION( OR HE+ ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 388-392
Authors:
MOLNAR GL
PETO G
HORVATH ZE
ZSOLDOS E
KHANH NQ
Citation: Gl. Molnar et al., SIZE-DEPENDENT PHENOMENA DURING THE FORMATION OF GD AND FE SILICIDE THIN-FILMS, Microelectronic engineering, 37-8(1-4), 1997, pp. 565-572
Authors:
UTRIAINEN M
LEHTO S
NIINISTO L
DUCSO C
KHANH NQ
HORVATH ZE
BARSONY I
PECZ B
Citation: M. Utriainen et al., POROUS SILICON HOST MATRIX FOR DEPOSITION BY ATOMIC LAYER EPITAXY, Thin solid films, 297(1-2), 1997, pp. 39-42
Authors:
KHANH NQ
Citation: Nq. Khanh, DIELECTRIC FUNCTION AND PLASMON DISPERSION-RELATION OF A QUASI-2-DIMENSIONAL ELECTRON-GAS, Physica status solidi. b, Basic research, 197(1), 1996, pp. 73-79
Authors:
KHANH NQ
Citation: Nq. Khanh, MAGNETOPLASMA OSCILLATIONS OF A 2-DIMENSIONAL, 2-COMPONENT PLASMA, Modern physics letters B, 10(16), 1996, pp. 737-744
Authors:
MOLNAR G
PETO G
ZSOLDOS E
HORVATH ZE
KHANH NQ
Citation: G. Molnar et al., THE EFFECT OF SILICON SUBSTRATE ORIENTATION ON THE FORMATION OF GD-SILICIDE PHASES, Applied surface science, 102, 1996, pp. 159-162
Authors:
PETO G
SCHILLER V
KHANH NQ
GYULAI J
KANSKI J
Citation: G. Peto et al., SURFACE REGROWTH OF SB ION-IMPLANTED SI(100), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 226-229
Authors:
JAROLI E
SZILAGYI E
KHANH NQ
PECZ B
Citation: E. Jaroli et al., ION-BEAM CHANNELING STUDY OF COBALT IMPLANTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 123-127
Authors:
ELSHERBINY MA
KHANH NQ
WORMEESTER H
FRIED M
LOHNER T
PINTER I
GYULAI J
Citation: Ma. Elsherbiny et al., SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION AND HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 728-732
Authors:
BOHER P
STEHLE JL
PIEL JP
FRIED M
LOHNER T
POLGAR O
KHANH NQ
BARSONY I
Citation: P. Boher et al., SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE DETERMINATION OF AN ION-IMPLANTATION DEPTH PROFILE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 160-168
Authors:
BIRO LP
GYULAI J
KHANH NQ
TUTTO P
Citation: Lp. Biro et al., INFLUENCE OF SAMPLE THICKNESS ON CARRIER LIFETIME MODIFICATION INDUCED BY 4 MEV PROTON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 173-176
Authors:
KHANH NQ
PINTER I
DUCSO C
ADAM M
SZILAGYI E
BARSONY I
ELSHERBINY MA
GYULAI J
Citation: Nq. Khanh et al., ION-BEAM ANALYSIS OF PLASMA IMMERSION IMPLANTED SILICON FOR SOLAR-CELL FABRICATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 259-262
Authors:
DUWE B
KHANH NQ
Citation: B. Duwe et Nq. Khanh, SITE-DIRECTED MUTAGENESIS OF THE ACTIVE-SITE OF PECTIN METHYLESTERASEFROM ASPERGILLUS-NIGER RH5344, Biotechnology letters, 18(6), 1996, pp. 621-626
Authors:
MALPRICHT S
THAMM A
KHANH NQ
Citation: S. Malpricht et al., CLONING OF CDNA FOR THE PROTEIN DISULFIDE-ISOMERASE FROM ASPERGILLUS-NIGER STRAIN NNRL3 USING PCR, Biotechnology letters, 18(4), 1996, pp. 445-450
Authors:
DUCSO C
KHANH NQ
HORVATH Z
BARSONY I
UTRIAINEN M
LEHTO S
NIEMINEN M
NIINISTO L
Citation: C. Ducso et al., DEPOSITION OF TIN OXIDE INTO POROUS SILICON BY ATOMIC LAYER EPITAXY, Journal of the Electrochemical Society, 143(2), 1996, pp. 683-687
Authors:
KHANH NQ
HAMORI A
FRIED M
DUCSO C
GYULAI J
Citation: Nq. Khanh et al., NONDESTRUCTIVE DETECTION OF MICROVOIDS AT THE INTERFACE OF DIRECT-BONDED SILICON-WAFERS BY SCANNING INFRARED MICROSCOPY, Journal of the Electrochemical Society, 142(7), 1995, pp. 2425-2429
Authors:
GYULAI J
RYSSEL H
BIRO LP
FREY L
KUKI A
KORMANY T
SERFOZO G
KHANH NQ
Citation: J. Gyulai et al., ATHERMAL EFFECTS IN ION-IMPLANTED LAYERS, Radiation effects and defects in solids, 127(3-4), 1994, pp. 397-404