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Results: 1-25/43
Authors:
GLUCHE P
LEUNER R
VESCAN A
EBERT W
KOHN E
REMBE C
DERWIESCHE S
HOFER EP
Citation: P. Gluche et al., ACTUATOR SENSOR TECHNOLOGY ON ELECTRONIC GRADE DIAMOND FILMS, Microsystem technologies, 5(1), 1998, pp. 38-43
Authors:
GLUCHE P
ADAMSCHIK M
VESCAN A
EBERT W
SZUCS F
FECHT HJ
FLOTER A
ZACHAI R
KOHN E
Citation: P. Gluche et al., APPLICATION OF HIGHLY ORIENTED, PLANAR DIAMOND (HOD) FILMS OF HIGH MECHANICAL STRENGTH IN SENSOR TECHNOLOGIES, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 779-782
Authors:
VESCAN A
DAUMILLER I
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF DIAMOND SCHOTTKY DIODE, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 581-584
Authors:
SCHMID P
LIPKA KM
IBBETSON J
NGUYEN N
MISHRA U
POND L
WEITZEL C
KOHN E
Citation: P. Schmid et al., HIGH-TEMPERATURE PERFORMANCE OF GAAS-BASED HFET STRUCTURE CONTAINING LT-ALGAAS AND LT-GAAS, IEEE electron device letters, 19(7), 1998, pp. 225-227
Authors:
HOCK G
HACKBARTH T
ERBEN U
KOHN E
KONIG U
Citation: G. Hock et al., HIGH-PERFORMANCE 0.25-MU-M P-TYPE GE SIGE MODFETS/, Electronics Letters, 34(19), 1998, pp. 1888-1889
Authors:
OPYRCHAL H
CHIN KK
KOHN E
EBERT W
Citation: H. Opyrchal et al., THE OPTICAL CHARACTERIZATION OF BORON-DOPED MPCVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 6(8), 1997, pp. 940-943
Authors:
EBERT W
VESCAN A
GLUCHE P
BORST T
KOHN E
Citation: W. Ebert et al., HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 329-332
Authors:
VESCAN A
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF PULSE-DOPED DIAMOND MESFET, IEEE electron device letters, 18(5), 1997, pp. 222-224
Authors:
GLUCHE P
ALEKSOV A
VESCAN A
EBERT W
KOHN E
Citation: P. Gluche et al., DIAMOND SURFACE-CHANNEL FET STRUCTURE WITH 200 V BREAKDOWN VOLTAGE, IEEE electron device letters, 18(11), 1997, pp. 547-549
Authors:
VESCAN A
DAUMILLER I
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., VERY HIGH-TEMPERATURE OPERATION OF DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 18(11), 1997, pp. 556-558
Authors:
LONG W
LEE LH
KOHN E
CHIN KK
Citation: W. Long et al., ANALYTICAL MODELING OF DUAL-GATE HFETS, IEEE transactions on computer-aided design of integrated circuits and systems, 16(12), 1997, pp. 1409-1417
Authors:
EHREN M
HOFFMANN S
JIN ML
KOHN E
HINTON DR
RYAN SJ
Citation: M. Ehren et al., INHIBITION OF RPE PROLIFERATION, ATTACHMENT AND MIGRATION BY CARBOXYAMIDO-TRIAZOLE (CAI), A DRUG WHICH ACTS BY MODIFYING CALCIUM-MEDIATED SIGNAL-TRANSDUCTION, Investigative ophthalmology & visual science, 38(4), 1997, pp. 3486-3486
Authors:
FIGG WD
CHRISTIAN MC
LUSH R
LINK CJ
DAVIS P
KOHN E
SAROSY G
ROTHENBERG ML
WEISS RB
RYAN N
JACOBS J
REED E
Citation: Wd. Figg et al., PHARMACOKINETICS OF ELEMENTAL PLATINUM (ULTRAFILTRATE AND TOTAL) AFTER A 30 MINUTE INTRAVENOUS-INFUSION OF ORMAPLATIN, Biopharmaceutics & drug disposition, 18(4), 1997, pp. 347-359
Authors:
KONIG U
GLUCK M
GRUHLE A
HOCK G
KOHN E
BOZON B
NUERNBERGK D
OSTERMANN T
HAGELAUER R
Citation: U. Konig et al., DESIGN RULES FOR N-TYPE SIGE HETERO FETS, Solid-state electronics, 41(10), 1997, pp. 1541-1547
Authors:
GLUCK M
HACKBARTH T
KONIG U
HAAS A
HOCK G
KOHN E
Citation: M. Gluck et al., HIGH F(MAX) N-TYPE SI SIGE MODFETS, Electronics Letters, 33(4), 1997, pp. 335-337
Authors:
IRWIN MD
PANTANO CG
GLUCHE P
KOHN E
Citation: Md. Irwin et al., BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON DIOXIDE, Applied physics letters, 71(5), 1997, pp. 716-718
Authors:
LIANG HC
VESCAN A
KOHN E
CHIN KK
Citation: Hc. Liang et al., MEASUREMENT OF STRESS IN A SYNTHETIC DIAMOND SUBSTRATE USING THE PHOTOELASTIC METHOD, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 664-668
Authors:
VESCAN A
EBERT W
BORST TH
KOHN E
Citation: A. Vescan et al., ELECTRICAL CHARACTERIZATION OF DIAMOND RESISTORS ETCHED BY RIE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 747-751
Authors:
BOUDART B
GAQUIERE C
TRASSAERT S
THERON D
SPLINGART B
LIPKA M
KOHN E
Citation: B. Boudart et al., SMALL-SIGNAL AND LARGE-SIGNAL MEASUREMENTS OF LOW-TEMPERATURE GAAS-FETS, Microwave and optical technology letters, 12(2), 1996, pp. 57-59
Authors:
STRAHLE S
HENLE B
LEE L
KUNZEL H
HACKBARTH T
DICKMANN J
KOHN E
Citation: S. Strahle et al., MICROWAVE PERFORMANCE OF INP-BASED HEMTS FOR LOW-VOLTAGE APPLICATION, Microwave and optical technology letters, 11(3), 1996, pp. 131-135
Authors:
GLUCHE P
WOLTER SD
BORST TH
EBERT W
VESCAN A
KOHN E
Citation: P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
PHOTOLUMINESCENCE ANALYSIS OF INALAS-INGAAS HFET MATERIAL WITH VARIEDPLACEMENT OF HEAVY DELTA-DOPING
Authors:
LEITCH WE
HENLE BU
KOHN E
Citation: We. Leitch et al., PHOTOLUMINESCENCE ANALYSIS OF INALAS-INGAAS HFET MATERIAL WITH VARIEDPLACEMENT OF HEAVY DELTA-DOPING, Journal of electronic materials, 25(10), 1996, pp. 1652-1659
Authors:
THOMAS H
LUO JK
MORGAN DV
LIPKA M
KOHN E
Citation: H. Thomas et al., LOW-TEMPERATURE-GROWN GAAS INSULATORS FOR GAAS-FET APPLICATIONS, Semiconductor science and technology, 11(9), 1996, pp. 1333-1338
Authors:
REED E
SAROSY G
KOHN E
CHRISTIAN M
LINK CJ
GOLDSPIEL B
DAVIS P
JACOB J
MAHER M
Citation: E. Reed et al., A PHASE-I STUDY OF PACLITAXEL AND CYCLOPHOSPHAMIDE IN RECURRENT ADENOCARCINOMA OF THE OVARY, Gynecologic oncology, 61(3), 1996, pp. 349-353
Authors:
LIN CJ
KOHN E
REED E
Citation: Cj. Lin et al., THE RELATIONSHIP BETWEEN BORDERLINE OVARIAN-TUMORS AND EPITHELIAL OVARIAN-CARCINOMA - EPIDEMIOLOGIC, PATHOLOGICAL, AND MOLECULAR ASPECTS, Gynecologic oncology, 60(3), 1996, pp. 347-354