ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-21 |

Results: 21

STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE

Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U

Citation: Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341

TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE

Authors: KONSTANTINOV AO NORDELL N WAHAB Q LINDEFELT U

Citation: Ao. Konstantinov et al., TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE, Applied physics letters, 73(13), 1998, pp. 1850-1852

HOMOEPITAXY 6H AND 4H SIC ON NONPLANAR SUBSTRATES

Authors: NORDELL N KARLSSON S KONSTANTINOV AO

Citation: N. Nordell et al., HOMOEPITAXY 6H AND 4H SIC ON NONPLANAR SUBSTRATES, Applied physics letters, 72(2), 1998, pp. 197-199

THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION

Authors: HALLIN C KONSTANTINOV AO PECZ B KORDINA O JANZEN E

Citation: C. Hallin et al., THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1297-1300

HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE

Authors: KONSTANTINOV AO IVANOV PA NORDELL N KARLSSON S HARRIS CI

Citation: Ao. Konstantinov et al., HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE, IEEE electron device letters, 18(11), 1997, pp. 521-522

THE MECHANISM FOR CUBIC SIC FORMATION ON OFF-ORIENTED SUBSTRATES

Authors: KONSTANTINOV AO HALLIN C PECZ B KORDINA O JANZEN E

Citation: Ao. Konstantinov et al., THE MECHANISM FOR CUBIC SIC FORMATION ON OFF-ORIENTED SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 495-504

EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC

Authors: SON NT SORMAN E CHEN WM BERGMAN JP HALLIN C KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMANN DM VOLM D MEYER BK

Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932

BRIGHT-LINE DEFECT FORMATION IN SILICON-CARBIDE INJECTION DIODES

Authors: KONSTANTINOV AO BLEICHNER H

Citation: Ao. Konstantinov et H. Bleichner, BRIGHT-LINE DEFECT FORMATION IN SILICON-CARBIDE INJECTION DIODES, Applied physics letters, 71(25), 1997, pp. 3700-3702

IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE

Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U

Citation: Ao. Konstantinov et al., IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE, Applied physics letters, 71(1), 1997, pp. 90-92

DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC

Authors: VOLM D MEYER BK HOFMANN DM CHEN WM SON NT PERSSON C LINDEFELT U KORDINA O SORMAN E KONSTANTINOV AO MONEMAR B JANZEN E

Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412

EFFECT OF VAPOR COMPOSITION ON POLYTYPE HOMOGENEITY OF EPITAXIAL SILICON-CARBIDE

Authors: KONSTANTINOV AO HALLIN C KORDINA O JANZEN E

Citation: Ao. Konstantinov et al., EFFECT OF VAPOR COMPOSITION ON POLYTYPE HOMOGENEITY OF EPITAXIAL SILICON-CARBIDE, Journal of applied physics, 80(10), 1996, pp. 5704-5712

FABRICATION AND PROPERTIES OF HIGH-RESISTIVITY POROUS SILICON-CARBIDEFOR SIC POWER DEVICE PASSIVATION

Authors: KONSTANTINOV AO HARRIS CI HENRY A JANZEN E

Citation: Ao. Konstantinov et al., FABRICATION AND PROPERTIES OF HIGH-RESISTIVITY POROUS SILICON-CARBIDEFOR SIC POWER DEVICE PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 114-117

IMPLANTATION-INDUCED DOPANT DIFFUSION IN THE FRAMEWORK OF THE DROPLETMODEL OF STRUCTURAL DISORDER

Authors: KONSTANTINOV AO

Citation: Ao. Konstantinov, IMPLANTATION-INDUCED DOPANT DIFFUSION IN THE FRAMEWORK OF THE DROPLETMODEL OF STRUCTURAL DISORDER, Applied physics letters, 67(3), 1995, pp. 356-358

ELECTRON EFFECTIVE MASSES IN 4H SIC

Authors: SON NT CHEN WM KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMAN DM VOLM D DRECHSLER M MEYER BK

Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES IN 4H SIC, Applied physics letters, 66(9), 1995, pp. 1074-1076

PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE

Authors: KONSTANTINOV AO HENRY A HARRIS CI JANZEN E

Citation: Ao. Konstantinov et al., PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE, Applied physics letters, 66(17), 1995, pp. 2250-2252

SIC POWER DEVICE PASSIVATION USING POROUS SIC

Authors: HARRIS CI KONSTANTINOV AO HALLIN C JANZEN E

Citation: Ci. Harris et al., SIC POWER DEVICE PASSIVATION USING POROUS SIC, Applied physics letters, 66(12), 1995, pp. 1501-1502

CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE

Authors: IVANOV PA KONSTANTINOV AO PANTELEEV VN SAMSONOVA TP CHELNOKOV VE

Citation: Pa. Ivanov et al., CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE, Semiconductors, 28(7), 1994, pp. 668-672

PASSIVATION OF CRYSTALLINE SILICON-CARBIDE IN A HYDROGEN PLASMA

Authors: KONSTANTINOV AO KONSTANTINOVA NS KONKOV OI TERUKOV EI IVANOV PA

Citation: Ao. Konstantinov et al., PASSIVATION OF CRYSTALLINE SILICON-CARBIDE IN A HYDROGEN PLASMA, Semiconductors, 28(2), 1994, pp. 209-210

SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES

Authors: JANZEN E KORDINA O HENRY A CHEN WM SON NT MONEMAR B SORMAN E BERGMAN P HARRIS CI YAKIMOVA R TUOMINEN M KONSTANTINOV AO HALLIN C HEMMINGSON C

Citation: E. Janzen et al., SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES, Physica scripta. T, 54, 1994, pp. 283-290

ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL-VAPOR-DEPOSITION LAYERS

Authors: SON NT KORDINA O KONSTANTINOV AO CHEN WM SORMAN E MONEMAR B JANZEN E

Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL-VAPOR-DEPOSITION LAYERS, Applied physics letters, 65(25), 1994, pp. 3209-3211

ELECTRICAL-PROPERTIES AND FORMATION MECHANISM OF POROUS SILICON-CARBIDE

Authors: KONSTANTINOV AO HARRIS CI JANZEN E

Citation: Ao. Konstantinov et al., ELECTRICAL-PROPERTIES AND FORMATION MECHANISM OF POROUS SILICON-CARBIDE, Applied physics letters, 65(21), 1994, pp. 2699-2701

Risultati: 1-21 |