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Results: 1-25/65
Authors:
Manninen, A
Kauranen, J
Pekola, J
Savin, A
Kamp, M
Emmerling, M
Forchel, A
Prunnila, M
Ahopelto, J
Citation: A. Manninen et al., Single electron transistor fabricated on heavily doped silicon-on-insulator substrate, JPN J A P 1, 40(3B), 2001, pp. 2013-2016
Authors:
Worschech, L
Fischer, F
Forchel, A
Kamp, M
Schweizer, H
Citation: L. Worschech et al., High frequency operation of nanoelectronic Y-branch at room temperature, JPN J A P 2, 40(8B), 2001, pp. L867-L868
Authors:
Moosburger, J
Kamp, M
Klopf, E
Reithmaier, JP
Forchel, A
Citation: J. Moosburger et al., Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-Mask, IEEE PHOTON, 13(5), 2001, pp. 406-408
Authors:
Kamp, M
Citation: M. Kamp, Odorant immission measurements: A new system of field inspections by "gridplume measurement" - a combination of plume and grid measurements as per guideline VDI 3940, GEFAHR R L, 61(4), 2001, pp. 133-137
Authors:
Kamp, M
Hofmann, J
Schafer, F
Reinhard, M
Fischer, M
Bleuel, T
Reithmaier, JP
Forchel, A
Citation: M. Kamp et al., Lateral coupling - a material independent way to complex coupled DFB lasers, OPT MATER, 17(1-2), 2001, pp. 19-25
Authors:
Happ, TD
Kamp, M
Klopf, F
Reithmaier, JP
Forchel, A
Citation: Td. Happ et al., Two-dimensional photonic crystal laser mirrors, SEMIC SCI T, 16(4), 2001, pp. 227-232
Authors:
Martini, I
Kamp, M
Fischer, F
Worschech, L
Koeth, J
Forchel, A
Citation: I. Martini et al., Fabrication of quantum point contacts and quantum dots by imprint lithography, MICROEL ENG, 57-8, 2001, pp. 397-403
Authors:
Moosburger, J
Kamp, M
Klopf, F
Fischer, M
Forchel, A
Citation: J. Moosburger et al., Fabrication of semiconductor lasers with 2D-photonic crystal mirrors usinga wet oxidized Al2O3-mask, MICROEL ENG, 57-8, 2001, pp. 1017-1021
Authors:
Happ, TD
Kamp, M
Forchel, A
Citation: Td. Happ et al., Photonic crystal tapers for ultracompact mode conversion, OPTICS LETT, 26(14), 2001, pp. 1102-1104
Authors:
Soede, RDM
Zeelenberg, IS
Wijnands, YM
Kamp, M
Roos, E
Citation: Rdm. Soede et al., Stromal cell-derived factor-1-induced LFA-1 activation during in vivo migration of T cell hybridoma cells requires G(q/11), RhoA, and myosin, as wellas G(i) and Cdc42, J IMMUNOL, 166(7), 2001, pp. 4293-4301
Authors:
Wang, CX
Chung, HYA
Seyboth, M
Kamp, M
Ebeling, KJ
Beccard, R
Heuken, M
Citation: Cx. Wang et al., Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 377-380
Authors:
Schwegler, V
Schad, SS
Scherer, M
Kamp, M
Ulu, G
Emsley, M
Unlu, MS
Lell, A
Bader, S
Hahne, B
Lugauer, HJ
Kuhn, F
Weimar, A
Harle, V
Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516
Authors:
Chung, HYA
Pelzmann, A
Drechsler, M
Scherer, M
Schwegler, V
Seyboth, M
Kirchner, C
Kamp, M
Citation: Hya. Chung et al., Multiple-step annealing for 50% enhanced p-conductivity of GaN, J CRYST GR, 230(3-4), 2001, pp. 549-553
Authors:
Scherer, M
Schwegler, V
Seyboth, M
Eberhard, F
Kirchner, C
Kamp, M
Ulu, G
Unlu, MS
Gruhler, R
Hollricher, O
Citation: M. Scherer et al., Characterization of etched facets for GaN-based lasers, J CRYST GR, 230(3-4), 2001, pp. 554-557
Authors:
Scherer, M
Schwegler, V
Seyboth, M
Kirchner, C
Kamp, M
Pelzmann, A
Drechsler, M
Citation: M. Scherer et al., Low resistive p-type GaN using two-step rapid thermal annealing processes, J APPL PHYS, 89(12), 2001, pp. 8339-8341
Authors:
Happ, TD
Markard, A
Kamp, M
Gentner, JL
Forchel, A
Citation: Td. Happ et al., InP-based short cavity lasers with 2D photonic crystal mirror, ELECTR LETT, 37(7), 2001, pp. 428-429
Authors:
Moosburger, J
Kamp, M
Forchel, A
Olivier, S
Benisty, H
Weisbuch, C
Oesterle, U
Citation: J. Moosburger et al., Enhanced transmission through photonic-crystal-based bent waveguides by bend engineering, APPL PHYS L, 79(22), 2001, pp. 3579-3581
Authors:
Muller, M
Kamp, M
Forchel, A
Gentner, JL
Citation: M. Muller et al., Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP-InP, APPL PHYS L, 79(17), 2001, pp. 2684-2686
Authors:
Kamp, M
Hofmann, J
Forchel, A
Lourdudoss, S
Citation: M. Kamp et al., Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors, APPL PHYS L, 78(26), 2001, pp. 4074-4075
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Spatially resolved imaging of the spectral emission characteristic of an InGaN/GaN-multi quantum well- light-emitting diode by scanning electroluminescence microscopy, JPN J A P 1, 39(4B), 2000, pp. 2414-2416
Authors:
Schwegler, V
Seyboth, M
Kirchner, C
Scherer, M
Kamp, M
Fischer, P
Christen, J
Zacharias, M
Citation: V. Schwegler et al., Spatially resolved electroluminescence of InGaN-MQW-LEDs, MRS I J N S, 5, 2000, pp. NIL_23-NIL_27
Authors:
Schwegler, V
Seyboth, M
Schad, S
Scherer, M
Kirchner, C
Kamp, M
Stempfle, U
Limmer, W
Sauer, R
Citation: V. Schwegler et al., Temperature distribution in InGaN-MQW LEDs under operation, MRS I J N S, 5, 2000, pp. NIL_556-NIL_561
Authors:
Salviati, G
Armani, N
Zanotti-Fregonara, C
Gombia, E
Albrecht, MG
Strunk, HP
Mayer, M
Kamp, M
Gasparotto, A
Citation: G. Salviati et al., Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire, MRS I J N S, 5, 2000, pp. NIL_647-NIL_654
Authors:
Moosburger, J
Happ, T
Kamp, M
Forchel, A
Citation: J. Moosburger et al., Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors, J VAC SCI B, 18(6), 2000, pp. 3501-3504
Authors:
Martini, I
Kuhn, S
Kamp, M
Worschech, L
Forchel, A
Eisert, D
Koeth, J
Sijbesma, R
Citation: I. Martini et al., Fabrication of quantum point contacts by imprint lithography and transportstudies, J VAC SCI B, 18(6), 2000, pp. 3561-3563