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Results: 1-25/40
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A NOVEL EXPERIMENTAL-TECHNIQUE FOR THE LATERAL PROFILING OF OXIDE ANDINTERFACE STATE CHARGES IN HOT-HOLE DEGRADED N-MOSFETS, IEEE electron device letters, 19(1), 1998, pp. 23-25
Authors:
CHENG CI
LING CH
Citation: Ci. Cheng et Ch. Ling, RHEOLOGICAL EQUATIONS IN ASYMPTOTIC REGIMES OF GRANULAR FLOW, Journal of engineering mechanics, 124(3), 1998, pp. 301-310
Authors:
CHENG ZY
LING CH
Citation: Zy. Cheng et Ch. Ling, A MODEL FOR MINORITY-CARRIER LIFETIME VARIATION IN THE OXIDE-SILICON STRUCTURE FOLLOWING 253.7 NM ULTRAVIOLET-IRRADIATION, Journal of applied physics, 83(10), 1998, pp. 5289-5294
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A COMPARISON OF HOT-CARRIER DEGRADATION IN TUNGSTEN POLYCIDE GATE ANDPOLY GATE P-MOSFETS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 895-903
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A UNIFIED MODEL FOR THE SELF-LIMITING HOT-CARRIER DEGRADATION IN LDD N-MOSFET, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 149-159
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, A NEW ASSESSMENT OF THE SELF-LIMITING HOT-CARRIER DEGRADATION IN LDD NMOSFETS BY CHARGE-PUMPING MEASUREMENT, IEEE electron device letters, 18(6), 1997, pp. 299-301
Authors:
LING CH
ANG DS
OOI JA
Citation: Ch. Ling et al., THE EFFECTS OF POLYSILICON DOPANT DEPLETION AND FOWLER-NORDHEIM TUNNELING ON THE CHARACTERISTICS OF N-OXIDE-SILICON CAPACITORS( POLYSILICON), Semiconductor science and technology, 12(3), 1997, pp. 245-251
Authors:
LING CH
GOH YH
OOI JA
Citation: Ch. Ling et al., FOWLER-NORDHEIM STRESS DEGRADATION IN GATE OXIDE - RESULTS FROM GATE-TO-DRAIN CAPACITANCE AND CHARGE-PUMPING CURRENT, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 681-683
Authors:
LING CH
GOH YH
Citation: Ch. Ling et Yh. Goh, CLOSE CORRESPONDENCE BETWEEN FORWARD GATED-DIODE AND CHARGE-PUMPING CURRENTS OBSERVED IN HOT-CARRIER STRESSED PMOSFETS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2309-2311
Authors:
LING CH
CHENG ZY
Citation: Ch. Ling et Zy. Cheng, TRAP GENERATION IN CVD SIO2 SUBJECTED TO 253.7-NM ULTRAVIOLET-IRRADIATION, Electronics Letters, 33(1), 1997, pp. 104-105
Authors:
LING CH
CHENG ZY
Citation: Ch. Ling et Zy. Cheng, AN IMPROVED ANALYSIS FOR THE DETERMINATION OF TRAP LEVELS IN SILICON FROM LASER MICROWAVE PHOTOCONDUCTIVE DECAY MEASUREMENTS, Applied physics letters, 71(22), 1997, pp. 3218-3220
Authors:
ANG DS
LING CH
Citation: Ds. Ang et Ch. Ling, EFFECTS OF TUNGSTEN POLYCIDATION ON THE HOT-CARRIER DEGRADATION IN BURIED-CHANNEL LDD P-MOSFET, JPN J A P 2, 35(12A), 1996, pp. 1572-1574
Authors:
CHEN CL
LING CH
Citation: Cl. Chen et Ch. Ling, GRANULAR-FLOW RHEOLOGY - ROLE OF SHEAR-RATE NUMBER IN TRANSITION REGIME, Journal of engineering mechanics, 122(5), 1996, pp. 469-480
Authors:
SAMUDRA GS
SEAH BP
LING CH
Citation: Gs. Samudra et al., DETERMINATION OF LDD MOSFET DRAIN RESISTANCE FROM DEVICE SIMULATION, Solid-state electronics, 39(5), 1996, pp. 753-758
Authors:
LING CH
JOSBERGER EG
THORNDIKE AS
Citation: Ch. Ling et al., MESOSCALE VARIABILITY OF THE UPPER COLORADO RIVER SNOWPACK, Nordic hydrology, 27(5), 1996, pp. 313-322
Authors:
LING CH
ANG DS
DUTOIT M
Citation: Ch. Ling et al., EXTRACTION OF CHANNEL-LENGTH IN 0.1 MU-M NMOSFET BY GATE TO DRAIN CAPACITANCE, Electronics Letters, 32(4), 1996, pp. 402-404
Authors:
LING CH
OOI JA
ANG DS
Citation: Ch. Ling et al., EFFECTS OF TUNGSTEN SILICIDATION ON FOWLER-NORDHEIM TUNNELING CURRENTAND CHARGE TRAPPING IN POLYSILICON-OXIDE-SILICON CAPACITORS, Electronics Letters, 32(10), 1996, pp. 933-934
Authors:
LING CH
Citation: Ch. Ling, IDENTIFICATION OF FIXED AND INTERFACE-TRAP CHARGES IN HOT-CARRIER STRESSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS) THROUGH ULTRAVIOLET-LIGHT ANNEAL AND GATE CAPACITANCE MEASUREMENTS, JPN J A P 2, 34(1B), 1995, pp. 101-104
Authors:
LING CH
Citation: Ch. Ling, CRITERIA FOR INCIPIENT MOTION OF SPHERICAL SEDIMENT PARTICLES, Journal of hydraulic engineering, 121(6), 1995, pp. 472-478
Authors:
LING CH
SAMUDRA GS
SEAH BP
Citation: Ch. Ling et al., SIMULATION OF LOGARITHMIC TIME-DEPENDENCE OF HOT-CARRIER DEGRADATION IN PMOSFETS, Semiconductor science and technology, 10(12), 1995, pp. 1659-1666
Authors:
ANG DS
LING CH
YEOW YT
Citation: Ds. Ang et al., STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS/, Microelectronic engineering, 28(1-4), 1995, pp. 257-260
Authors:
CHOI WK
LOO FL
LING CH
LOH FC
TAN KL
Citation: Wk. Choi et al., STRUCTURAL AND ELECTRICAL STUDIES OF RADIO-FREQUENCY SPUTTERED HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS, Journal of applied physics, 78(12), 1995, pp. 7289-7294
Authors:
CHOI WK
CHAN YM
LING CH
LEE Y
GOPALAKRISHNAN R
TAN KL
Citation: Wk. Choi et al., STRUCTURAL-PROPERTIES OF AMORPHOUS-SILICON CARBIDE FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 77(2), 1995, pp. 827-832
Authors:
LING CH
BHASKARAN J
CHOI WK
AH LK
Citation: Ch. Ling et al., STUDY OF RF-SPUTTERED YTTRIUM-OXIDE FILMS ON SILICON BY CAPACITANCE MEASUREMENTS, Journal of applied physics, 77(12), 1995, pp. 6350-6353
Authors:
LING CH
ANG DS
TAN SE
Citation: Ch. Ling et al., EFFECTS OF MEASUREMENT FREQUENCY AND TEMPERATURE ANNEAL ON DIFFERENTIAL GATE CAPACITANCE SPECTRA OBSERVED IN HOT-CARRIER STRESSED MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1528-1535