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Results:
1-21
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Results: 21
Authors:
LOHNER T
KHANH NQ
ZOLNAI Z
Citation: T. Lohner et al., SPECTROELLIPSOMETRIC CHARACTERIZATION OF ION-IMPLANTED SEMICONDUCTORSAND POROUS SILICON, Acta physica slovaca, 48(4), 1998, pp. 441-450
Authors:
PETRIK P
POLGAR O
LOHNER T
FRIED M
KHANH NQ
GYULAI J
Citation: P. Petrik et al., ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 50(3-4), 1998, pp. 293-297
Authors:
LOHNER T
PETRIK P
POLGAR O
KHANH NQ
FRIED M
GYULAI J
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Vacuum, 50(3-4), 1998, pp. 487-490
Authors:
ROBERT C
BIDEUX L
GRUZZA B
CADORET M
LOHNER T
FRIED M
VAZSONYI E
GERGELY G
Citation: C. Robert et al., SPECTROELLIPSOMETRY AND ELECTRON-SPECTROSCOPY OF POROUS SI THIN-FILMSON P(+) SUBSTRATES, Thin solid films, 317(1-2), 1998, pp. 210-213
Authors:
PETRIK P
BIRO LP
FRIED M
LOHNER T
BERGER R
SCHNEIDER C
GYULAI J
RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF SURFACE-ROUGHNESS MEASURED ON POLYSILICON USING SPECTROSCOPIC ELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY, Thin solid films, 315(1-2), 1998, pp. 186-191
Authors:
LOHNER T
KHANH NQ
PETRIK P
BIRO LP
FRIED M
PINTER I
LEHNERT W
FREY L
RYSSEL H
WENTINK DJ
GYULAI J
Citation: T. Lohner et al., SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION, Thin solid films, 313, 1998, pp. 254-258
Authors:
PETRIK P
FRIED M
LOHNER T
BERGER R
BIRO LP
SCHNEIDER C
GYULAI J
RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF POLYSILICON-ON-OXIDE USING SPECTROSCOPIC ELLIPSOMETRY, ATOMIC-FORCE MICROSCOPY, AND TRANSMISSION ELECTRON-MICROSCOPY, Thin solid films, 313, 1998, pp. 259-263
Authors:
FRIED M
WORMEESTER H
ZOETHOUT E
LOHNER T
POLGAR O
BARSONY I
Citation: M. Fried et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRIC INVESTIGATION OF VACUUM ANNEALED AND OXIDIZED POROUS SILICON LAYERS, Thin solid films, 313, 1998, pp. 459-463
Authors:
ROBERT C
BIDEUX L
GRUZZA B
LOHNER T
FRIED M
BARNA A
SOMOGYI K
GERGELY G
Citation: C. Robert et al., ELLIPSOMETRY OF AL2O3 THIN-FILMS DEPOSITED ON SI AND INP, Semiconductor science and technology, 12(11), 1997, pp. 1429-1432
Authors:
ELSHERBINY MA
KHANH NQ
WORMEESTER H
FRIED M
LOHNER T
PINTER I
GYULAI J
Citation: Ma. Elsherbiny et al., SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION AND HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 728-732
Authors:
BOHER P
STEHLE JL
PIEL JP
FRIED M
LOHNER T
POLGAR O
KHANH NQ
BARSONY I
Citation: P. Boher et al., SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE DETERMINATION OF AN ION-IMPLANTATION DEPTH PROFILE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 160-168
Authors:
FRIED M
LOHNER T
POLGAR O
PETRIK P
VAZSONYI E
BARSONY I
PIEL JP
STEHLE JL
Citation: M. Fried et al., CHARACTERIZATION OF DIFFERENT POROUS SILICON STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 223-227
Authors:
TAKAI M
KATAYAMA Y
LOHNER T
KINOMURA A
RYSSEL H
TSIEN PH
BURTE E
SATOU M
CHAYAHARA A
Citation: M. Takai et al., NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT -SILICIDE FORMATION AND MULTILAYERED STRUCTURE, Radiation effects and defects in solids, 127(3-4), 1994, pp. 357-365
Authors:
LOHNER T
KOTAI E
KHANH NQ
TOTH Z
FRIED M
VEDAM K
NGUYEN NV
HANEKAMP LJ
VANSILFHOUT A
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED ANOMALOUS SURFACE AMORPHIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 335-339
Authors:
LOHNER T
TOTH Z
FRIED M
KHANH NQ
YANG GQ
LU LC
ZOU SC
HANEKAMP LJ
VANSILFHOUT A
GYULAI J
Citation: T. Lohner et al., COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 524-527
Authors:
TAKAI M
HARA S
LEE C
KINOMURA A
LOHNER T
Citation: M. Takai et al., CHANNELING CONTRAST ANALYSIS OF GAAS SIDE-WALLS FABRICATED BY LASER WET CHEMICAL ETCHING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 752-755
Authors:
KINOMURA A
HORINO Y
MOKUNO Y
CHAYAHARA A
KIUCHI M
FUJII K
TAKAI M
LOHNER T
RYSSEL H
SCHORK R
Citation: A. Kinomura et al., OBSERVATION OF LOCAL SIMOX LAYERS BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 921-924
Authors:
GYULAY J
PASZTI F
LOHNER T
BATTISTIG G
Citation: J. Gyulay et al., ION-BEAM ANALYSIS - PROCEEDINGS OF THE 11TH INTERNATIONAL-CONFERENCE ON ION-BEAM ANALYSIS BALATONFURED, HUNGARY, JULY 5-9, 1993 - PREFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 180000007-180000008
Authors:
KINOMURA A
LOHNER T
KATAYAMA Y
TAKAI M
RYSSEL H
SCHORK R
CHAYAHARA A
HORINO Y
FUJII K
SATOU M
Citation: A. Kinomura et al., OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 77(1-4), 1993, pp. 369-372
Authors:
LOHNER T
FRIED M
GYULAI J
VEDAM K
NGUYEN NV
HANEKAMP LJ
VANSILFHOUT A
Citation: T. Lohner et al., ION-IMPLANTATION-CAUSED SPECIAL DAMAGE PROFILES DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY IN CRYSTALLINE AND IN RELAXED (ANNEALED) AMORPHOUS-SILICON, Thin solid films, 233(1-2), 1993, pp. 117-121
Authors:
WATANABE H
HAGA K
LOHNER T
Citation: H. Watanabe et al., STRUCTURE OF HIGH-PHOTOSENSITIVITY SILICON OXYGEN ALLOY-FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1085-1088
Risultati:
1-21
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