AAAAAA

   
Results: 1-25 | 26-27
Results: 1-25/27
IMPROVEMENT OF HOT-CARRIER RELIABILITY WITH DEUTERIUM ANNEALS FOR MANUFACTURING MULTILEVEL METAL DIELECTRIC MOS SYSTEMS/
Authors: KIZILYALLI IC ABELN GC CHEN Z LEE J WEBER G KOTZIAS B CHETLUR S LYDING JW HESS K
Citation: Ic. Kizilyalli et al., IMPROVEMENT OF HOT-CARRIER RELIABILITY WITH DEUTERIUM ANNEALS FOR MANUFACTURING MULTILEVEL METAL DIELECTRIC MOS SYSTEMS/, IEEE electron device letters, 19(11), 1998, pp. 444-446
SECONDARY-ION MASS-SPECTROSCOPY CHARACTERIZATION OF THE DEUTERIUM SINTERING PROCESS FOR ENHANCED-LIFETIME COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: LEE J AUR S EKLUND R HESS K LYDING JW
Citation: J. Lee et al., SECONDARY-ION MASS-SPECTROSCOPY CHARACTERIZATION OF THE DEUTERIUM SINTERING PROCESS FOR ENHANCED-LIFETIME COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1762-1766
ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/
Authors: LYDING JW HESS K ABELN GC THOMPSON DS MOORE JS HERSAM MC FOLEY ET LEE J CHEN Z HWANG ST CHOI H AVOURIS P KIZILYALLI IC
Citation: Jw. Lyding et al., ULTRAHIGH VACUUM-SCANNING TUNNELING MICROSCOPY NANOFABRICATION AND HYDROGEN DEUTERIUM DESORPTION FROM SILICON SURFACES - IMPLICATIONS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY/, Applied surface science, 132, 1998, pp. 221-230
CRYOGENIC UHV-STM STUDY OF HYDROGEN AND DEUTERIUM DESORPTION FROM SI(100)
Authors: FOLEY ET KAM AF LYDING JW AVOURIS P
Citation: Et. Foley et al., CRYOGENIC UHV-STM STUDY OF HYDROGEN AND DEUTERIUM DESORPTION FROM SI(100), Physical review letters, 80(6), 1998, pp. 1336-1339
GIANT ISOTOPE EFFECT IN HOT-ELECTRON DEGRADATION OF METAL-OXIDE-SILICON DEVICES
Authors: HESS K KIZILYALLI IC LYDING JW
Citation: K. Hess et al., GIANT ISOTOPE EFFECT IN HOT-ELECTRON DEGRADATION OF METAL-OXIDE-SILICON DEVICES, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 406-416
DEUTERIUM POST-METAL ANNEALING OF MOSFETS FOR IMPROVED HOT-CARRIER RELIABILITY
Authors: KIZILYALLI IC LYDING JW HESS K
Citation: Ic. Kizilyalli et al., DEUTERIUM POST-METAL ANNEALING OF MOSFETS FOR IMPROVED HOT-CARRIER RELIABILITY, IEEE electron device letters, 18(3), 1997, pp. 81-83
UHV STM NANOFABRICATION - PROGRESS, TECHNOLOGY SPIN-OFFS, AND CHALLENGES
Authors: LYDING JW
Citation: Jw. Lyding, UHV STM NANOFABRICATION - PROGRESS, TECHNOLOGY SPIN-OFFS, AND CHALLENGES, Proceedings of the IEEE, 85(4), 1997, pp. 589-600
NANOPATTERNING ORGANIC MONOLAYERS ON SI(100) BY SELECTIVE CHEMISORPTION OF NORBORNADIENE
Authors: ABELN GC LEE SY LYDING JW THOMPSON DS MOORE JS
Citation: Gc. Abeln et al., NANOPATTERNING ORGANIC MONOLAYERS ON SI(100) BY SELECTIVE CHEMISORPTION OF NORBORNADIENE, Applied physics letters, 70(20), 1997, pp. 2747-2749
NANOSCALE PATTERNING AND SELECTIVE CHEMISTRY OF SILICON SURFACES BY ULTRAHIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY
Authors: LYDING JW SHEN TC ABELN GC WANG C TUCKER JR
Citation: Jw. Lyding et al., NANOSCALE PATTERNING AND SELECTIVE CHEMISTRY OF SILICON SURFACES BY ULTRAHIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY, Nanotechnology, 7(2), 1996, pp. 128-133
BREAKING INDIVIDUAL CHEMICAL-BONDS VIA STM-INDUCED EXCITATIONS
Authors: AVOURIS P WALKUP RE ROSSI AR AKPATI HC NORDLANDER P SHEN TC ABELN GC LYDING JW
Citation: P. Avouris et al., BREAKING INDIVIDUAL CHEMICAL-BONDS VIA STM-INDUCED EXCITATIONS, Surface science, 363(1-3), 1996, pp. 368-377
ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE-BASED NANOLITHOGRAPHY AND SELECTIVE CHEMISTRY ON SILICON SURFACES
Authors: LYDING JW SHEN TC ABELN GC WANG C SCOTT PA TUCKER JR AVOURIS P WALKUP RE
Citation: Jw. Lyding et al., ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE-BASED NANOLITHOGRAPHY AND SELECTIVE CHEMISTRY ON SILICON SURFACES, Israel Journal of Chemistry, 36(1), 1996, pp. 3-10
STM-INDUCED H ATOM DESORPTION FROM SI(100) - ISOTOPE EFFECTS AND SITESELECTIVITY
Authors: AVOURIS P WALKUP RE ROSSI AR SHEN TC ABELN GC TUCKER JR LYDING JW
Citation: P. Avouris et al., STM-INDUCED H ATOM DESORPTION FROM SI(100) - ISOTOPE EFFECTS AND SITESELECTIVITY, Chemical physics letters, 257(1-2), 1996, pp. 148-154
REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING
Authors: LYDING JW HESS K KIZILYALLI IC
Citation: Jw. Lyding et al., REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING, Applied physics letters, 68(18), 1996, pp. 2526-2528
INTERFACE CHARACTERIZATION IN AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/
Authors: SKALA SL WU W TUCKER JR LYDING JW SEABAUGH A BEAM EA JOVANOVIC D
Citation: Sl. Skala et al., INTERFACE CHARACTERIZATION IN AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 660-663
INTERFACE CHARACTERIZATION OF AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/
Authors: WU W SKALA SL TUCKER JR LYDING JW SEABAUGH A BEAM EA JOVANOVIC D
Citation: W. Wu et al., INTERFACE CHARACTERIZATION OF AN INP INGAAS RESONANT-TUNNELING DIODE BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 602-606
NANOSCALE STM-PATTERNING AND CHEMICAL MODIFICATION OF THE SI(100) SURFACE
Authors: ABELN GC SHEN TC TUCKER JR LYDING JW
Citation: Gc. Abeln et al., NANOSCALE STM-PATTERNING AND CHEMICAL MODIFICATION OF THE SI(100) SURFACE, Microelectronic engineering, 27(1-4), 1995, pp. 23-26
ATOMIC-SCALE DESORPTION THROUGH ELECTRONIC AND VIBRATIONAL-EXCITATIONMECHANISMS
Authors: SHEN TC WANG C ABELN GC TUCKER JR LYDING JW AVOURIS P WALKUP RE
Citation: Tc. Shen et al., ATOMIC-SCALE DESORPTION THROUGH ELECTRONIC AND VIBRATIONAL-EXCITATIONMECHANISMS, Science, 268(5217), 1995, pp. 1590-1592
NANOSCALE OXIDE PATTERNS ON SI(100) SURFACES
Authors: SHEN TC WANG C LYDING JW TUCKER JR
Citation: Tc. Shen et al., NANOSCALE OXIDE PATTERNS ON SI(100) SURFACES, Applied physics letters, 66(8), 1995, pp. 976-978
NANOMETER-SCALE PATTERNING AND OXIDATION OF SILICON SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE
Authors: LYDING JW ABELN GC SHEN TC WANG C TUCKER JR
Citation: Jw. Lyding et al., NANOMETER-SCALE PATTERNING AND OXIDATION OF SILICON SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3735-3740
STM STUDY OF SURFACE RECONSTRUCTIONS OF SI(111)B
Authors: SHEN TC WANG C LYDING JW TUCKER JR
Citation: Tc. Shen et al., STM STUDY OF SURFACE RECONSTRUCTIONS OF SI(111)B, Physical review. B, Condensed matter, 50(11), 1994, pp. 7453-7460
INTEGRATED CRYOGENIC SCANNING-TUNNELING-MICROSCOPY AND SAMPLE PREPARATION SYSTEM
Authors: TESSMER SH VANHARLINGEN DJ LYDING JW
Citation: Sh. Tessmer et al., INTEGRATED CRYOGENIC SCANNING-TUNNELING-MICROSCOPY AND SAMPLE PREPARATION SYSTEM, Review of scientific instruments, 65(9), 1994, pp. 2855-2859
SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES
Authors: FAY P BROCKENBROUGH RT ABELN G SCOTT P AGARWALA S ADESIDA I LYDING JW
Citation: P. Fay et al., SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES, Journal of applied physics, 75(11), 1994, pp. 7545-7549
SCANNING-TUNNELING-MICROSCOPY OF STEP BUNCHING ON VICINAL GAAS(100) ANNEALED AT HIGH-TEMPERATURES
Authors: SKALA SL CHOU ST CHENG KY TUCKER JR LYDING JW
Citation: Sl. Skala et al., SCANNING-TUNNELING-MICROSCOPY OF STEP BUNCHING ON VICINAL GAAS(100) ANNEALED AT HIGH-TEMPERATURES, Applied physics letters, 65(6), 1994, pp. 722-724
NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE
Authors: LYDING JW SHEN TC HUBACEK JS TUCKER JR ABELN GC
Citation: Jw. Lyding et al., NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE, Applied physics letters, 64(15), 1994, pp. 2010-2012
STRUCTURE OF GAAS(100)-C(8X2) DETERMINED BY SCANNING-TUNNELING-MICROSCOPY
Authors: SKALA SL HUBACEK JS TUCKER JR LYDING JW CHOU ST CHENG KY
Citation: Sl. Skala et al., STRUCTURE OF GAAS(100)-C(8X2) DETERMINED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 48(12), 1993, pp. 9138-9141
Risultati: 1-25 | 26-27