AAAAAA

   
Results: 1-22 |
Results: 22
GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2.05 MU-M WITH 0.6-W DIFFRACTION-LIMITED POWER
Authors: CHOI HK WALPOLE JN TURNER GW CONNORS MK MISSAGGIA LJ MANFRA MJ
Citation: Hk. Choi et al., GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2.05 MU-M WITH 0.6-W DIFFRACTION-LIMITED POWER, IEEE photonics technology letters, 10(7), 1998, pp. 938-940
ABSORPTION-SPECTROSCOPY OF CHARGED SPIN TEXTURE EXCITATIONS AT NU=1
Authors: GOLDBERG BB MANFRA MJ PFEIFFER L WEST K
Citation: Bb. Goldberg et al., ABSORPTION-SPECTROSCOPY OF CHARGED SPIN TEXTURE EXCITATIONS AT NU=1, Physica. B, Condensed matter, 251, 1998, pp. 7-14
ANDERSON-FANO RESONANCE AND SHAKE-UP PROCESSES IN THE MAGNETOPHOTOLUMINESCENCE OF A 2-DIMENSIONAL ELECTRON-SYSTEM
Authors: MANFRA MJ GOLDBERG BB PFEIFFER L WEST K
Citation: Mj. Manfra et al., ANDERSON-FANO RESONANCE AND SHAKE-UP PROCESSES IN THE MAGNETOPHOTOLUMINESCENCE OF A 2-DIMENSIONAL ELECTRON-SYSTEM, Physical review. B, Condensed matter, 57(16), 1998, pp. 9467-9470
ULTRALOW-THRESHOLD (50 A CM(2)) STRAINED SINGLE-QUANTUM-WELL GAINASSB/ALGEASSB LASERS EMITTING AT 2.05 MU-M/
Authors: TURNER GW CHOI HK MANFRA MJ
Citation: Gw. Turner et al., ULTRALOW-THRESHOLD (50 A CM(2)) STRAINED SINGLE-QUANTUM-WELL GAINASSB/ALGEASSB LASERS EMITTING AT 2.05 MU-M/, Applied physics letters, 72(8), 1998, pp. 876-878
CHEMICALLY ASSISTED ION-BEAM ETCHING OF SUBMICRON FEATURES IN GASB
Authors: NAGY G AHMAD RU LEVY M OSGOOD RM MANFRA MJ TURNER GW
Citation: G. Nagy et al., CHEMICALLY ASSISTED ION-BEAM ETCHING OF SUBMICRON FEATURES IN GASB, Applied physics letters, 72(11), 1998, pp. 1350-1352
SKYRMIONS AND THE NU=1 QUANTUM HALL FERROMAGNET
Authors: MANFRA MJ GOLDBERG BB PFEIFFER L WEST K
Citation: Mj. Manfra et al., SKYRMIONS AND THE NU=1 QUANTUM HALL FERROMAGNET, Acta Physica Polonica. A, 92(4), 1997, pp. 621-632
MBE GROWTH OF HIGH-POWER INASSB INALASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/
Authors: TURNER GW MANFRA MJ CHOI HK CONNORS MK
Citation: Gw. Turner et al., MBE GROWTH OF HIGH-POWER INASSB INALASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/, Journal of crystal growth, 175, 1997, pp. 825-832
HIGH-PERFORMANCE GAINASSB THERMOPHOTOVOLTAIC DEVICES WITH AN ALGAASSBWINDOW
Authors: CHOI HK WANG CA TURNER GW MANFRA MJ SPEARS DL CHARACHE GW DANIELSON LR DEPOY DM
Citation: Hk. Choi et al., HIGH-PERFORMANCE GAINASSB THERMOPHOTOVOLTAIC DEVICES WITH AN ALGAASSBWINDOW, Applied physics letters, 71(26), 1997, pp. 3758-3760
EFFECTS OF LOW-TEMPERATURE-GROWN GAAS AND ALGAAS ON THE CURRENT OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
Authors: CHEN CL MAHONEY LJ NICHOLS KB MANFRA MJ BROWN ER NITISHIN PM MOLVAR KM GRAMSTORFF BF MURPHY RA
Citation: Cl. Chen et al., EFFECTS OF LOW-TEMPERATURE-GROWN GAAS AND ALGAAS ON THE CURRENT OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1745-1751
HIGH THERMOELECTRIC FIGURES OF MERIT IN PBTE QUANTUM-WELLS
Authors: HARMAN TC SPEARS DL MANFRA MJ
Citation: Tc. Harman et al., HIGH THERMOELECTRIC FIGURES OF MERIT IN PBTE QUANTUM-WELLS, Journal of electronic materials, 25(7), 1996, pp. 1121-1127
TEMPERATURE-DEPENDENCE OF THE SPIN POLARIZATION OF A QUANTUM HALL FERROMAGNET
Authors: MANFRA MJ AIFER EH GOLDBERG BB BROIDO DA PFEIFFER L WEST K
Citation: Mj. Manfra et al., TEMPERATURE-DEPENDENCE OF THE SPIN POLARIZATION OF A QUANTUM HALL FERROMAGNET, Physical review. B, Condensed matter, 54(24), 1996, pp. 17327-17330
HIGH CW POWER (GREATER-THAN-200MW FACET) AT 3.4-MU-M FROM INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS/
Authors: CHOI HK TURNER GW MANFRA MJ
Citation: Hk. Choi et al., HIGH CW POWER (GREATER-THAN-200MW FACET) AT 3.4-MU-M FROM INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS/, Electronics Letters, 32(14), 1996, pp. 1296-1297
BROAD WAVELENGTH TUNABILITY OF GRATING-COUPLED EXTERNAL-CAVITY MIDINFRARED SEMICONDUCTOR-LASERS
Authors: LE HQ TURNER GW OCHOA JR MANFRA MJ COOK CC ZHANG YH
Citation: Hq. Le et al., BROAD WAVELENGTH TUNABILITY OF GRATING-COUPLED EXTERNAL-CAVITY MIDINFRARED SEMICONDUCTOR-LASERS, Applied physics letters, 69(19), 1996, pp. 2804-2806
175 K CONTINUOUS-WAVE OPERATION OF INASSB INAIASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/
Authors: CHOI HK TURNER GW MANFRA MJ CONNORS MK
Citation: Hk. Choi et al., 175 K CONTINUOUS-WAVE OPERATION OF INASSB INAIASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/, Applied physics letters, 68(21), 1996, pp. 2936-2938
OPTICAL HETERODYNE-DETECTION AND MICROWAVE RECTIFICATION UP TO 26 GHZUSING QUANTUM-WELL INFRARED PHOTODETECTORS
Authors: LIU HC JENKINS GE BROWN ER MCINTOSH KA NICHOLS KB MANFRA MJ
Citation: Hc. Liu et al., OPTICAL HETERODYNE-DETECTION AND MICROWAVE RECTIFICATION UP TO 26 GHZUSING QUANTUM-WELL INFRARED PHOTODETECTORS, IEEE electron device letters, 16(6), 1995, pp. 253-255
SELF-ALIGNED GAAS MISFETS WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR
Authors: CHEN CL MAHONEY LJ NICHOLS KB MANFRA MJ GRAMSTORFF BF MOLVAR KM MURPHY RA BROWN ER
Citation: Cl. Chen et al., SELF-ALIGNED GAAS MISFETS WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR, IEEE electron device letters, 16(5), 1995, pp. 199-201
QUANTUM-WELL INTERSUBBAND HETERODYNE INFRARED DETECTION UP TO 82 GHZ
Authors: LIU HC LI JM BROWN ER MCINTOSH KA NICHOLS KB MANFRA MJ
Citation: Hc. Liu et al., QUANTUM-WELL INTERSUBBAND HETERODYNE INFRARED DETECTION UP TO 82 GHZ, Applied physics letters, 67(11), 1995, pp. 1594-1596
MILLIWATT OUTPUT LEVELS AND SUPERQUADRATIC BIAS DEPENDENCE IN A LOW-TEMPERATURE-GROWN GAAS PHOTOMIXER
Authors: BROWN ER MCINTOSH KA SMITH FW NICHOLS KB MANFRA MJ DENNIS CL MATTIA JP
Citation: Er. Brown et al., MILLIWATT OUTPUT LEVELS AND SUPERQUADRATIC BIAS DEPENDENCE IN A LOW-TEMPERATURE-GROWN GAAS PHOTOMIXER, Applied physics letters, 64(24), 1994, pp. 3311-3313
A QUASI-OPTICAL RESONANT-TUNNELING-DIODE OSCILLATOR OPERATING ABOVE 200 GHZ
Authors: BROWN ER PARKER CD CALAWA AR MANFRA MJ MOLVAR KM
Citation: Er. Brown et al., A QUASI-OPTICAL RESONANT-TUNNELING-DIODE OSCILLATOR OPERATING ABOVE 200 GHZ, IEEE transactions on microwave theory and techniques, 41(4), 1993, pp. 720-722
FREQUENCY DISPERSION OF TRANSCONDUCTANCE AND OUTPUT RESISTANCE IN GAAS-MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION LAYERS
Authors: CHEN CL SMITH FW MAHONEY LJ MANFRA MJ CALAWA AR
Citation: Cl. Chen et al., FREQUENCY DISPERSION OF TRANSCONDUCTANCE AND OUTPUT RESISTANCE IN GAAS-MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION LAYERS, Electronics Letters, 29(5), 1993, pp. 499-501
SMALL-SIGNAL ADMITTANCE AND SWITCHING MEASUREMENTS OF THE RESONANT-TUNNELING DIODE
Authors: MATTIA JP BROWN ER CALAWA AR MANFRA MJ
Citation: Jp. Mattia et al., SMALL-SIGNAL ADMITTANCE AND SWITCHING MEASUREMENTS OF THE RESONANT-TUNNELING DIODE, Applied physics letters, 63(4), 1993, pp. 521-523
RESONANT-TUNNELING THROUGH MIXED QUASI-BOUND STATES IN A TRIPLE-WELL STRUCTURE
Authors: BROWN ER PARKER CD CALAWA AR MANFRA MJ
Citation: Er. Brown et al., RESONANT-TUNNELING THROUGH MIXED QUASI-BOUND STATES IN A TRIPLE-WELL STRUCTURE, Applied physics letters, 62(23), 1993, pp. 3016-3018
Risultati: 1-22 |