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Results: 1-25 | 26-39
Results: 1-25/39
EFFECT OF ILLUMINATION ON TRANSPORT-PROPERTIES OF THE HIGH-MOBILITY 2D HOLE GAS IN SI-SIGE HETEROSTRUCTURES
Authors: STADNIK VA MITCHELL EE CLARK RG FANG FF WANG PJ MEYERSON BS
Citation: Va. Stadnik et al., EFFECT OF ILLUMINATION ON TRANSPORT-PROPERTIES OF THE HIGH-MOBILITY 2D HOLE GAS IN SI-SIGE HETEROSTRUCTURES, Physica. B, Condensed matter, 246, 1998, pp. 386-390
HALL MEASUREMENTS OF THE INSULATING PHASES AT NU=1.5 AND NU-SIMILAR-TO-0.5 IN P-TYPE SI SI1-XCEX HETEROSTRUCTURES USING PULSED MAGNETIC-FIELDS/
Authors: MITCHELL EE CLARK RG FANG FF STARRETT RP SKOUGAREVSKY AV WANG PJ MEYERSON BS
Citation: Ee. Mitchell et al., HALL MEASUREMENTS OF THE INSULATING PHASES AT NU=1.5 AND NU-SIMILAR-TO-0.5 IN P-TYPE SI SI1-XCEX HETEROSTRUCTURES USING PULSED MAGNETIC-FIELDS/, Physica. B, Condensed matter, 246, 1998, pp. 391-394
A LOW-TEMPERATURE INSULATING PHASE AT V=1.5 FOR 2D HOLES IN HIGH-MOBILITY SISI1-XGEX HETEROSTRUCTURES WITH LANDAU-LEVEL DEGENERACY
Authors: DUNFORD RB MITCHELL EE CLARK RG STADNIK VA FANG FF NEWBURY R MCKENZIE RH STARRETT RP WANG PJ MEYERSON BS
Citation: Rb. Dunford et al., A LOW-TEMPERATURE INSULATING PHASE AT V=1.5 FOR 2D HOLES IN HIGH-MOBILITY SISI1-XGEX HETEROSTRUCTURES WITH LANDAU-LEVEL DEGENERACY, Journal of physics. Condensed matter, 9(7), 1997, pp. 1565-1574
SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS
Authors: ADESIDA I ARAFA M ISMAIL K CHU JO MEYERSON BS
Citation: I. Adesida et al., SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS, Microelectronic engineering, 35(1-4), 1997, pp. 257-260
LOW-FIELD MAGNETORESISTANCE IN SI SIGE QUANTUM-WELLS/
Authors: PRINZ A BRUNTHALER G SAWICKI M BAUER G ISMAIL K MEYERSON BS
Citation: A. Prinz et al., LOW-FIELD MAGNETORESISTANCE IN SI SIGE QUANTUM-WELLS/, Thin solid films, 294(1-2), 1997, pp. 179-181
MANUFACTURABILITY AND APPLICATIONS OF SIGE HBT TECHNOLOGY
Authors: SUNDERLAND DA AHLGREN DC GILBERT MM JENG SJ MALINOWSKI JC NGUYENNGOC D SCHONENBERG KT STEIN KJ MEYERSON BS HARAME DL
Citation: Da. Sunderland et al., MANUFACTURABILITY AND APPLICATIONS OF SIGE HBT TECHNOLOGY, Solid-state electronics, 41(10), 1997, pp. 1503-1507
DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE
Authors: MOONEY PM TILLY L DEMIC CP CHU JO CARDONE F LEGOUES FK MEYERSON BS
Citation: Pm. Mooney et al., DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 82(2), 1997, pp. 688-695
LOW-TEMPERATURE TRANSPORT AND PHOTOCONDUCTIVITY RESPONSE OF HIGH-MOBILITY SI-SIGE HETEROSTRUCTURES IN STRONG MAGNETIC-FIELDS
Authors: CLARK RG DUNFORD RB FANG FF STADNIK VA MITCHELL EE NEWBURY R MCKENZIE RH STARRETT RP SKOUGAREVSKY AV CHU JO ISMAIL KE MEYERSON BS
Citation: Rg. Clark et al., LOW-TEMPERATURE TRANSPORT AND PHOTOCONDUCTIVITY RESPONSE OF HIGH-MOBILITY SI-SIGE HETEROSTRUCTURES IN STRONG MAGNETIC-FIELDS, Physica. B, Condensed matter, 216(3-4), 1996, pp. 388-392
DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET
Authors: ARAFA M FAY P ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451
HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS
Authors: ARAFA M FAY P ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 17(3), 1996, pp. 124-126
A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET
Authors: ARAFA M ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET, IEEE electron device letters, 17(12), 1996, pp. 586-588
A MANUFACTURABLE POLYEMITTER GRADED-SIGE HBT TECHNOLOGY FOR WIRELESS AND MIXED-SIGNAL APPLICATIONS
Authors: NGUYENNGOC D SUNDERLAND DA AHLGREN DC JENG SJ GILBERT MM MALINOWSKI JC SCHONENBERG KT STEIN KS MEYERSON BS HARAME DL
Citation: D. Nguyenngoc et al., A MANUFACTURABLE POLYEMITTER GRADED-SIGE HBT TECHNOLOGY FOR WIRELESS AND MIXED-SIGNAL APPLICATIONS, Applied surface science, 102, 1996, pp. 194-201
LOW-TEMPERATURE MAGNETOTRANSPORT OF 2D ELECTRON AND HOLE SYSTEMS IN HIGH-MOBILITY SI-SI1-XGEX HETEROCTRUCTURES
Authors: DUNFORD RB NEWBURY R STADNIK VA FANG FF CLARK RG MCKENZIE RH STARRETT RP MITCHELL EE WANG PJ CHU JO ISMAIL KE MEYERSON BS
Citation: Rb. Dunford et al., LOW-TEMPERATURE MAGNETOTRANSPORT OF 2D ELECTRON AND HOLE SYSTEMS IN HIGH-MOBILITY SI-SI1-XGEX HETEROCTRUCTURES, Surface science, 362(1-3), 1996, pp. 550-555
ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/
Authors: FEENSTRA RM LUTZ MA STERN F ISMAIL K MOONEY PM LEGOUES FK STANIS C CHU JO MEYERSON BS
Citation: Rm. Feenstra et al., ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1608-1612
SI SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY/
Authors: ISMAIL K MEYERSON BS
Citation: K. Ismail et Bs. Meyerson, SI SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY/, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 306-310
WEAK-LOCALIZATION AND ELECTRON-ELECTRON INTERACTION IN SI SIGE QUANTUM-WELLS/
Authors: PRINZ A STOGER G BRUNTHALER G BAUER G ISMAIL K MEYERSON BS
Citation: A. Prinz et al., WEAK-LOCALIZATION AND ELECTRON-ELECTRON INTERACTION IN SI SIGE QUANTUM-WELLS/, Acta Physica Polonica. A, 88(5), 1995, pp. 873-876
FQHE STATES OF HIGH-MOBILITY N-SI SI1-XGEX HETEROSTRUCTURES IN PULSEDMAGNETIC-FIELDS/
Authors: DUNFORD RB NEWBURY R FANG FF CLARK RG STARRETT RP CHU JO ISMAIL KE MEYERSON BS
Citation: Rb. Dunford et al., FQHE STATES OF HIGH-MOBILITY N-SI SI1-XGEX HETEROSTRUCTURES IN PULSEDMAGNETIC-FIELDS/, Solid state communications, 96(2), 1995, pp. 57-60
SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468
SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482
HIGH-TRANSCONDUCTANCE P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR
Authors: ARAFA M ISMAIL K FAY P CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., HIGH-TRANSCONDUCTANCE P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR, Electronics Letters, 31(8), 1995, pp. 680-681
EXTREMELY HIGH-ELECTRON-MOBILITY IN SI SIGE MODULATION-DOPED HETEROSTRUCTURES/
Authors: ISMAIL K ARAFA M SAENGER KL CHU JO MEYERSON BS
Citation: K. Ismail et al., EXTREMELY HIGH-ELECTRON-MOBILITY IN SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(9), 1995, pp. 1077-1079
GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI SIGE MODULATION-DOPED HETEROSTRUCTURES/
Authors: ISMAIL K ARAFA M STERN F CHU JO MEYERSON BS
Citation: K. Ismail et al., GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(7), 1995, pp. 842-844
SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING
Authors: LI PW YANG ES YANG YF CHU JO MEYERSON BS
Citation: Pw. Li et al., SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING, IEEE electron device letters, 15(10), 1994, pp. 402-405
SHUBNIKOV-DEHAAS OSCILLATIONS AND NEGATIVE MAGNETORESISTANCE UNDER HOT-ELECTRON CONDITIONS IN SI SIGE HETEROSTRUCTURES/
Authors: STOGER G BRUNTHALER G BAUER G ISMAIL K MEYERSON BS LUTZ J KUCHAR F
Citation: G. Stoger et al., SHUBNIKOV-DEHAAS OSCILLATIONS AND NEGATIVE MAGNETORESISTANCE UNDER HOT-ELECTRON CONDITIONS IN SI SIGE HETEROSTRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 765-771
SHUBNIKOV-DEHAAS OSCILLATIONS UNDER HOT-ELECTRON CONDITIONS IN SI SI1-XGEX HETEROSTRUCTURES/
Authors: STOGER G BRUNTHALER G BAUER G ISMAIL K MEYERSON BS LUTZ J KUCHAR F
Citation: G. Stoger et al., SHUBNIKOV-DEHAAS OSCILLATIONS UNDER HOT-ELECTRON CONDITIONS IN SI SI1-XGEX HETEROSTRUCTURES/, Physical review. B, Condensed matter, 49(15), 1994, pp. 10417-10425
Risultati: 1-25 | 26-39