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Results: 1-15 |
Results: 15
INVESTIGATION OF (100)-SILICON SAMPLES ON CYCLOTRON BEAMS WITH CHANNELING METHOD
Authors: DITROI F MEYER JD MICHELMANN RW BETHGE K
Citation: F. Ditroi et al., INVESTIGATION OF (100)-SILICON SAMPLES ON CYCLOTRON BEAMS WITH CHANNELING METHOD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 253-257
MOLECULAR ION-IMPLANTATION IN SILICON
Authors: MARKWITZ A BAUMANN H MICHELMANN RW MEYER JD KRIMMEL EF BETHGE K
Citation: A. Markwitz et al., MOLECULAR ION-IMPLANTATION IN SILICON, Mikrochimica acta, 125(1-4), 1997, pp. 313-316
NITROGEN DEPTH DISTRIBUTION, INTERFACE AND STRUCTURE-ANALYSIS OF SINXLAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION
Authors: MARKWITZ A BAUMANN H MICHELMANN RW MEYER JD KRIMMEL EF BETHGE K
Citation: A. Markwitz et al., NITROGEN DEPTH DISTRIBUTION, INTERFACE AND STRUCTURE-ANALYSIS OF SINXLAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION, Mikrochimica acta, 125(1-4), 1997, pp. 337-341
INVESTIGATION OF THE REACTION N-15(ALPHA,N)F-18 FOR MATERIALS ANALYSIS
Authors: PRIGGE U MEYER JD MICHELMANN RW BETHGE K
Citation: U. Prigge et al., INVESTIGATION OF THE REACTION N-15(ALPHA,N)F-18 FOR MATERIALS ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 18-20
BORON DETECTION USING THE NUCLEAR-REACTION B-11(P,ALPHA)2-ALPHA
Authors: VOLLMER M MEYER JD MICHELMANN RW BETHGE K
Citation: M. Vollmer et al., BORON DETECTION USING THE NUCLEAR-REACTION B-11(P,ALPHA)2-ALPHA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 21-25
BORON LOCALIZATION IN SILICON, AN APPLICATION OF NUCLEAR-REACTION CHANNELING FOR MATERIALS ANALYSIS
Authors: VOLLMER M MEYER JD MICHELMANN RW BETHGE K
Citation: M. Vollmer et al., BORON LOCALIZATION IN SILICON, AN APPLICATION OF NUCLEAR-REACTION CHANNELING FOR MATERIALS ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 403-406
LAYER AND INTERFACE ANALYSIS OF ULTRA-THIN ION-BEAM PRODUCED SILICON-NITRIDE LAYERS BY NRA AND TEM
Authors: MARKWITZ A KLEIN S MICHELMANN RW BAUMANN H KRIMMEL EF BETHGE K
Citation: A. Markwitz et al., LAYER AND INTERFACE ANALYSIS OF ULTRA-THIN ION-BEAM PRODUCED SILICON-NITRIDE LAYERS BY NRA AND TEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 284-288
INVESTIGATION OF ULTRA-THIN SINXOY LAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH NRA AND CHANNELING-RBS
Authors: MICHELMANN RW BAUMANN H MARKWITZ A MEYER JD BETHGE K
Citation: Rw. Michelmann et al., INVESTIGATION OF ULTRA-THIN SINXOY LAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH NRA AND CHANNELING-RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 62-64
COMBINED NRA, CHANNELING-RES AND FTIR ELLIPSOMETRY ANALYSES FOR THE DETERMINATION OF THE INTERFACE AND BONDING STATE OF THIN SIOX AND SINXOY LAYERS
Authors: MICHELMANN RW BAUMANN H MARKWITZ A MEYER JD ROSELER A KRIMMEL EF BETHGE K
Citation: Rw. Michelmann et al., COMBINED NRA, CHANNELING-RES AND FTIR ELLIPSOMETRY ANALYSES FOR THE DETERMINATION OF THE INTERFACE AND BONDING STATE OF THIN SIOX AND SINXOY LAYERS, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 403-407
COMPUTER-SIMULATION OF CHANNELING IN SI AND GAAS CRYSTALS
Authors: DITROI F MEYER JD MICHELMANN RW BETHGE K
Citation: F. Ditroi et al., COMPUTER-SIMULATION OF CHANNELING IN SI AND GAAS CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 182-186
NUCLEAR-REACTION CHANNELING
Authors: MEYER JD MICHELMANN RW DITROI F BETHGE K
Citation: Jd. Meyer et al., NUCLEAR-REACTION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 440-443
CHEMICAL BONDING AND INTERFACE ANALYSIS OF ULTRATHIN SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION AND ELECTRON-BEAM RAPID THERMAL ANNEALING (EB-RTA)
Authors: MARKWITZ A BAUMANN H KRIMMEL EF MICHELMANN RW MAURER C PALOURA EC KNOP A BETHGE K
Citation: A. Markwitz et al., CHEMICAL BONDING AND INTERFACE ANALYSIS OF ULTRATHIN SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION AND ELECTRON-BEAM RAPID THERMAL ANNEALING (EB-RTA), Applied physics. A, Solids and surfaces, 59(4), 1994, pp. 435-439
CHANNELING CHARGED-PARTICLE ACTIVATION-ANALYSIS OF LIGHT IMPURITIES AT TRACE LEVELS IN GAAS
Authors: SCHENKEL T HEBERT H MEYER JD MICHELMANN RW BETHGE K
Citation: T. Schenkel et al., CHANNELING CHARGED-PARTICLE ACTIVATION-ANALYSIS OF LIGHT IMPURITIES AT TRACE LEVELS IN GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 79-82
LOCALIZATION AND MOBILITY OF OXYGEN IN MONOCRYSTALLINE GAAS BY CHANNELING-NRA
Authors: HEBERT H SCHENKEL T MEYER JD MICHELMANN RW BETHGE K
Citation: H. Hebert et al., LOCALIZATION AND MOBILITY OF OXYGEN IN MONOCRYSTALLINE GAAS BY CHANNELING-NRA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 95-99
INVESTIGATION OF THE ELECTRONIC-ENERGY LOSS OF LIGHT-IONS FOR MATERIALS ANALYSIS
Authors: MEYER JD MICHELMANN RW DITROI F BETHGE K
Citation: Jd. Meyer et al., INVESTIGATION OF THE ELECTRONIC-ENERGY LOSS OF LIGHT-IONS FOR MATERIALS ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 186-190
Risultati: 1-15 |