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Results: 1-25 | 26-31
Results: 1-25/31
NANOMETER-SIZE ATOMIC CLUSTERS IN SEMICONDUCTORS - A NEW APPROACH TO TAILORING MATERIAL PROPERTIES
Authors: MILVIDSKII MG CHALDYSHEV VV
Citation: Mg. Milvidskii et Vv. Chaldyshev, NANOMETER-SIZE ATOMIC CLUSTERS IN SEMICONDUCTORS - A NEW APPROACH TO TAILORING MATERIAL PROPERTIES, Semiconductors, 32(5), 1998, pp. 457-465
PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN, Solid-state electronics, 42(4), 1998, pp. 627-635
SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY GOVORKOV AV SMIRNOV NB MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 637-646
PROPERTIES OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELT
Authors: KUNITSYN AE CHALDYSHEV VV MILVIDSKAYA AG MILVIDSKII MG
Citation: Ae. Kunitsyn et al., PROPERTIES OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELT, Semiconductors, 31(8), 1997, pp. 806-808
SPACE GROWTH OF SEMICONDUCTOR CRYSTALS - RESULTS, PROBLEMS, AND PROSPECTS
Authors: MILVIDSKII MG VEREZUB NA KARTAVYKH AV KOPELIOVICH ES PROSTOMOLOTOV AI RAKOV VV
Citation: Mg. Milvidskii et al., SPACE GROWTH OF SEMICONDUCTOR CRYSTALS - RESULTS, PROBLEMS, AND PROSPECTS, Crystallography reports, 42(5), 1997, pp. 843-852
FORMATION OF INHOMOGENEOUS IMPURITY DISTRIBUTION IN GERMANIUM SINGLE-CRYSTALS GROWN UNDER CONDITIONS OF MICROGRAVITY
Authors: KARTAVYKH AV KOPELIOVICH ES MILVIDSKII MG RAKOV VV YUROVA ES
Citation: Av. Kartavykh et al., FORMATION OF INHOMOGENEOUS IMPURITY DISTRIBUTION IN GERMANIUM SINGLE-CRYSTALS GROWN UNDER CONDITIONS OF MICROGRAVITY, Crystallography reports, 42(4), 1997, pp. 694-699
HIGH-TEMPERATURE MICROHARDNESS OF EPITAXIAL LAYERS OF QUATERNARY A(III)B(V)-BASED SOLID-SOLUTIONS
Authors: MEZHENNYI MV MILVIDSKII MG YUGOVA TG MALKOVA NV TUNITSKAYA IV
Citation: Mv. Mezhennyi et al., HIGH-TEMPERATURE MICROHARDNESS OF EPITAXIAL LAYERS OF QUATERNARY A(III)B(V)-BASED SOLID-SOLUTIONS, Crystallography reports, 42(3), 1997, pp. 477-484
SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING()
Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG NEMIROVSKII AV UFIMTSEV VB
Citation: Vt. Bublik et al., SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING(), Crystallography reports, 42(2), 1997, pp. 319-322
SCANNING ELECTRON-MICROSCOPY STUDIES OF DOUBLE-LAYER SILICON STRUCTURES PREPARED BY EPITAXY AND DIRECT BONDING
Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG CHERVYAKOVA EN
Citation: Av. Govorkov et al., SCANNING ELECTRON-MICROSCOPY STUDIES OF DOUBLE-LAYER SILICON STRUCTURES PREPARED BY EPITAXY AND DIRECT BONDING, Scanning, 19(1), 1997, pp. 55-59
DEFECT FORMATION IN SI AND GAAS SINGLE-CR YSTAL WAFERS SUBJECTED TO MECHANICAL TREATMENT
Authors: KOLEV D MILVIDSKII MG NOVIKOV AG SOKOLOVA NS FOMIN VG
Citation: D. Kolev et al., DEFECT FORMATION IN SI AND GAAS SINGLE-CR YSTAL WAFERS SUBJECTED TO MECHANICAL TREATMENT, Kristallografia, 42(1), 1997, pp. 141-144
ANISOTROPY EFFECTS IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ONTHE SURFACE OF HOMOEPITAXIAL GALLIUM-ARSENIDE
Authors: VORONKOV VV ZHUKOVA LA MILVIDSKII MG SIMONOVA TV YUGOVA TG ANOKHINA EN
Citation: Vv. Voronkov et al., ANISOTROPY EFFECTS IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ONTHE SURFACE OF HOMOEPITAXIAL GALLIUM-ARSENIDE, Kristallografia, 42(1), 1997, pp. 154-156
GROWTH AND PROPERTIES OF THIN INGAAS EPITAXIAL LAYERS ON INP
Authors: BELOGOROKHOV AI MILVIDSKII MG OSIPOVA AN
Citation: Ai. Belogorokhov et al., GROWTH AND PROPERTIES OF THIN INGAAS EPITAXIAL LAYERS ON INP, Journal of molecular structure, 410, 1997, pp. 253-257
EFFECT OF NATIVE POINT-DEFECTS ON MORPHOLOGY OF GETTERING CENTERS IN CZ-SILICON WAFERS
Authors: ENISHERLOVA KL RUSAK TF MILVIDSKII MG REZNICK VJ
Citation: Kl. Enisherlova et al., EFFECT OF NATIVE POINT-DEFECTS ON MORPHOLOGY OF GETTERING CENTERS IN CZ-SILICON WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 120-124
SEM STUDIES DOUBLE-LAYER SILICON STRUCTUR ES PREPARED BY EPITAXY AND DIRECT BONDING
Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG
Citation: Av. Govorkov et al., SEM STUDIES DOUBLE-LAYER SILICON STRUCTUR ES PREPARED BY EPITAXY AND DIRECT BONDING, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 8-13
MECHANISM OF DISLOCATION GENERATION IN HE TEROSTRUCTURES BASED ON SIGE ALLOYS
Authors: VDOVIN VI MILVIDSKII MG JUGOVA TI
Citation: Vi. Vdovin et al., MECHANISM OF DISLOCATION GENERATION IN HE TEROSTRUCTURES BASED ON SIGE ALLOYS, Kristallografia, 41(6), 1996, pp. 1087-1092
ANISOTROPY IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ON THE SURFACE OF EPITAXIAL SILICON LAYERS
Authors: VORONKOV VV ZHUKOVA LA MILVIDSKII MG SIMONOVA TV
Citation: Vv. Voronkov et al., ANISOTROPY IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ON THE SURFACE OF EPITAXIAL SILICON LAYERS, Kristallografia, 41(1), 1996, pp. 185-187
LUMINESCENCE AND STRUCTURAL STUDIES OF GASB SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELTS
Authors: BERT NA KUNITSYN AE CHALDYSHEV VV MILVIDSKAYA AG MILVIDSKII MG
Citation: Na. Bert et al., LUMINESCENCE AND STRUCTURAL STUDIES OF GASB SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELTS, Semiconductors, 29(6), 1995, pp. 578-580
SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES
Authors: ABRAMOV AV DERYAGIN NG MILVIDSKII MG TRETYAKOV DN YUGOVA TG
Citation: Av. Abramov et al., SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES, Kristallografia, 40(5), 1995, pp. 906-912
THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES
Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG
Citation: Vt. Bublik et al., THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES, Kristallografia, 40(1), 1995, pp. 128-136
STRUCTURE AND RAMAN-SCATTERING SPECTRA OF GE-SI SUPERLATTICES GROWN BY THE HYDRIDE METHOD
Authors: KUZNETSOV OA ORLOV LK KALUGIN NG DROZDOV YN DROZDOV MN VDOVIN VI MILVIDSKII MG
Citation: Oa. Kuznetsov et al., STRUCTURE AND RAMAN-SCATTERING SPECTRA OF GE-SI SUPERLATTICES GROWN BY THE HYDRIDE METHOD, Fizika tverdogo tela, 36(3), 1994, pp. 726-735
PHENOMENON OF EXTERNAL ELASTIC PRESSURES ON LONGWAVE OPTICAL PHONONS SPECTRUM IN INXGA1-XAS SOLID-SOLUTION
Authors: SOLOVEVA EV MILVIDSKII MG KUSIKOV VA OSIPOVA AN BELOGOROKHOV AI
Citation: Ev. Soloveva et al., PHENOMENON OF EXTERNAL ELASTIC PRESSURES ON LONGWAVE OPTICAL PHONONS SPECTRUM IN INXGA1-XAS SOLID-SOLUTION, Pis'ma v Zurnal tehniceskoj fiziki, 20(20), 1994, pp. 32-37
EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE
Authors: GOVORKOV AV NOVIKOV AG MILVIDSKII MG SHLENSKII AA FOMIN VG YUGOVA TG
Citation: Av. Govorkov et al., EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE, Physica status solidi. a, Applied research, 144(1), 1994, pp. 121-130
STABILITY OF A REGULAR STEPPED STRUCTURE ON VICINAL GAAS SURFACE DURING THE OMC-HYDRIDE EPITAXIAL-GROWTH
Authors: VORONKOV VV ZHUKOVA LA SMIRNOVA TV MILVIDSKII MG NALIVAIKO II ANOKHINA EN
Citation: Vv. Voronkov et al., STABILITY OF A REGULAR STEPPED STRUCTURE ON VICINAL GAAS SURFACE DURING THE OMC-HYDRIDE EPITAXIAL-GROWTH, Kristallografia, 39(3), 1994, pp. 523-525
STABILITY OF A REGULAR STEPPED SURFACE IN CHEMICAL-VAPOR-DEPOSITED SILICON - INFLUENCE OF VAPOR COMPOSITION
Authors: VORONKOV VV ZHUKOVA LA MILVIDSKII MG SIMONOVA TV
Citation: Vv. Voronkov et al., STABILITY OF A REGULAR STEPPED SURFACE IN CHEMICAL-VAPOR-DEPOSITED SILICON - INFLUENCE OF VAPOR COMPOSITION, Kristallografia, 39(2), 1994, pp. 310-314
EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY
Authors: VDOVIN VI MILVIDSKII MG YUGOVA TG LYUTOVICH KL SAIDOV SM
Citation: Vi. Vdovin et al., EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 141(1-2), 1994, pp. 109-118
Risultati: 1-25 | 26-31