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Results: 1-25/54
Authors:
Mascarenhas, A
Zhang, Y
Citation: A. Mascarenhas et Y. Zhang, Dilute nitride based III-V alloys for laser and solar cell applications, CURR OP SOL, 5(4), 2001, pp. 253-259
Authors:
Mascarenhas, A
Zhang, Y
Verley, J
Seong, MJ
Citation: A. Mascarenhas et al., Overcoming limitations in semiconductor alloy design, SUPERLATT M, 29(6), 2001, pp. 395-404
Authors:
Zhang, Y
Mascarenhas, A
Citation: Y. Zhang et A. Mascarenhas, Effects of the orientational superlattice on the electronic and vibrational properties of CuPt ordered GaInP alloys, J RAMAN SP, 32(10), 2001, pp. 831-834
Authors:
Mascarenhas, A
Zhang, Y
Seong, MJ
Citation: A. Mascarenhas et al., A perspective of GaAs1-xNx and GaPxN1-x as heavily doped semiconductors, PHYS ST S-B, 228(1), 2001, pp. 243-252
Authors:
Zhang, Y
Francoeur, S
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap, PHYS ST S-B, 228(1), 2001, pp. 287-291
Authors:
Lee, SH
Cheong, HM
Park, NG
Tracy, CE
Mascarenhas, A
Benson, DK
Deb, SK
Citation: Sh. Lee et al., Raman spectroscopic studies of Ni-W oxide thin films, SOL ST ION, 140(1-2), 2001, pp. 135-139
Authors:
Perkins, JD
Mascarenhas, A
Geisz, JF
Friedman, DJ
Citation: Jd. Perkins et al., Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301, PHYS REV B, 6412(12), 2001, pp. 1301
Authors:
Zhang, Y
Mascarenhas, A
Wang, LW
Citation: Y. Zhang et al., Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys - art. no. 125207, PHYS REV B, 6412(12), 2001, pp. 5207
Authors:
Mascarenhas, A
Cheong, HM
Alsina, F
Geisz, JF
Olson, JM
Citation: A. Mascarenhas et al., Reply to "Comment on 'Phonon modes in spontaneously ordered GaInP2 studiedby micro-Raman measurements' " - art. no. 247202, PHYS REV B, 6324(24), 2001, pp. 7202-NIL_642
Authors:
Seong, MJ
Mascarenhas, A
Olson, JM
Cheong, HM
Citation: Mj. Seong et al., Anisotropy of phonon modes in spontaneously ordered GaInP2 - art. no. 235205, PHYS REV B, 6323(23), 2001, pp. 5205
Authors:
Zhang, Y
Mascarenhas, A
Wang, LW
Citation: Y. Zhang et al., Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloys - art. no. 201312, PHYS REV B, 6320(20), 2001, pp. 1312
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Scaling of band-gap reduction in heavily nitrogen doped GaAs - art. no. 161303, PHYS REV B, 6316(16), 2001, pp. 1303
Authors:
Li, JH
Kulik, J
Holy, V
Zhong, Z
Moss, SC
Zhang, Y
Ahrenkiel, SP
Mascarenhas, A
Bai, JM
Citation: Jh. Li et al., X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films - art. no. 155310, PHYS REV B, 6315(15), 2001, pp. 5310
Authors:
Zhang, Y
Mascarenhas, A
Geisz, JF
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-xNx - art. no. 085205, PHYS REV B, 6308(8), 2001, pp. 5205
Authors:
Zhong, ZY
Li, JH
Kulik, J
Chow, PC
Norman, AG
Mascarenhas, A
Bai, J
Golding, TD
Moss, SC
Citation: Zy. Zhong et al., Quadruple-period ordering along [110] in a GaAs0.87Sb0.13 alloy - art. no.033314, PHYS REV B, 6303(3), 2001, pp. 3314
Authors:
Lee, SH
Cheong, HM
Tracy, CE
Mascarenhas, A
Pitts, R
Jorgensen, G
Deb, SK
Citation: Sh. Lee et al., Influence of microstructure on the chemical diffusion of lithium ions in amorphous lithiated tungsten oxide films, ELECTR ACT, 46(22), 2001, pp. 3415-3419
Authors:
Cheong, HM
Lee, SH
Nelson, B
Mascarenhas, A
Deb, SK
Citation: Hm. Cheong et al., Evidence for light-induced long-range hydrogen motion in a-Si : H using Raman scattering of a-WO3, ELECTR ACT, 46(13-14), 2001, pp. 1963-1966
Authors:
Lee, SH
Cheong, HM
Liu, P
Smith, D
Tracy, CE
Mascarenhas, A
Pitts, JR
Deb, SK
Citation: Sh. Lee et al., Raman spectroscopic studies of gasochromic a-WO3 thin films, ELECTR ACT, 46(13-14), 2001, pp. 1995-1999
Authors:
Seong, MJ
Mascarenhas, A
Geisz, JF
Citation: Mj. Seong et al., Gamma-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed byresonant Raman scattering, APPL PHYS L, 79(9), 2001, pp. 1297-1299
Authors:
Seong, MJ
Hanna, MC
Mascarenhas, A
Citation: Mj. Seong et al., Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1-xNx, APPL PHYS L, 79(24), 2001, pp. 3974-3976
Authors:
Li, JH
Holy, V
Zhong, Z
Kulik, J
Moss, SC
Norman, AG
Mascarenhas, A
Reno, JL
Follstaedt, DM
Citation: Jh. Li et al., X-ray analysis of spontaneous lateral modulation in (InAs)(n)/(AlAs)(m) short-period superlattices, APPL PHYS L, 78(2), 2001, pp. 219-221
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Valence-band splitting and shear deformation potential of dilute GaAs1-xNxalloys, PHYS REV B, 61(7), 2000, pp. 4433-4436
Authors:
Zhang, Y
Mascarenhas, A
Smith, S
Geisz, JF
Olson, JM
Hanna, M
Citation: Y. Zhang et al., Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in GaxIn1-xP alloys, PHYS REV B, 61(15), 2000, pp. 9910-9912
Authors:
Kozhevnikov, M
Narayanamurti, V
Reddy, CV
Xin, HP
Tu, CW
Mascarenhas, A
Zhang, Y
Citation: M. Kozhevnikov et al., Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy, PHYS REV B, 61(12), 2000, pp. R7861-R7864
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Formation of an impurity band and its quantum confinement in heavily dopedGaAs : N, PHYS REV B, 61(11), 2000, pp. 7479-7482