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Results: 1-25 | 26-34
Results: 1-25/34
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy
Authors: Faleev, NN Musikhin, YG Suvorova, AA Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Tabuchi, M Takeda, Y
Citation: Nn. Faleev et al., Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy, SEMICONDUCT, 35(8), 2001, pp. 932-940
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
Authors: Ledentsov, NN Shchukin, VA Bimberg, D Ustinov, VM Cherkashin, NA Musikhin, YG Volovik, BV Cirlin, GE Alferov, ZI
Citation: Nn. Ledentsov et al., Reversibility of the island shape, volume and density in Stranski-Krastanow growth, SEMIC SCI T, 16(6), 2001, pp. 502-506
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
Authors: Volovik, BV Kovsh, AR Passenberg, W Kuenzel, H Grote, N Cherkashin, NA Musikhin, YG Ledentsov, NN Bimberg, D Ustinov, VM
Citation: Bv. Volovik et al., Optical and structural properties of self-organized InGaAsN/GaAs nanostructures, SEMIC SCI T, 16(3), 2001, pp. 186-190
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
Spin redistribution due to Pauli blocking in quantum dots - art. no. 045309
Authors: Kalevich, VK Paillard, M Kavokin, KV Marie, X Kovsh, AR Amand, T Zhukov, AE Musikhin, YG Ustinov, VM Vanelle, E Zakharchenya, BP
Citation: Vk. Kalevich et al., Spin redistribution due to Pauli blocking in quantum dots - art. no. 045309, PHYS REV B, 6404(4), 2001, pp. 5309
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Authors: Chaldyshev, VV Bert, NA Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
Authors: Cherkashin, NA Bert, NA Musikhin, YG Novikov, SV Cheng, TS Foxon, CT
Citation: Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Musikhin, YG Kartashova, AP Usikov, AS Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Hahn, E Neubauer, B Rosenauer, A Litvinov, D Gerthsen, D Plaut, AC Hoffmann, AA Bimberg, D
Citation: Il. Krestnikov et al., Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots, SEMICONDUCT, 34(4), 2000, pp. 481-487
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
Authors: Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m
Authors: Volovik, BV Sizov, DS Tsatsul'nikov, AF Musikhin, YG Ledentsov, NN Ustinov, VM Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE
Citation: Bv. Volovik et al., The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m, SEMICONDUCT, 34(11), 2000, pp. 1316-1320
1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
Authors: Egorov, VA Cirlin, GE Polyakov, NK Petrov, VN Tonkikh, AA Volovik, BV Musikhin, YG Zhukov, AE Tsatsul'nikov, AF Ustinov, VM
Citation: Va. Egorov et al., 1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates, NANOTECHNOL, 11(4), 2000, pp. 323-326
Long-wavelength quantum dot lasers on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Volovik, BV Musikhin, YG Shernyakov, YM Kondat'eva, EY Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength quantum dot lasers on GaAs substrates, NANOTECHNOL, 11(4), 2000, pp. 397-400
InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices
Authors: Maximov, MV Krestnikov, IL Shernyakov, YM Zhukov, AE Maleev, NA Musikhin, YG Ustinov, VM Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices, J ELEC MAT, 29(5), 2000, pp. 487-493
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Shernyakov, YM Kaiander, IN Kondrat'eva, EY Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Musikhin, YG Kop'ev, PS Alferov, ZI Heitz, R Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Sizov, DS Shernyakov, YM Kaiander, IN Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Alferov, ZI Heitz, R Shchukin, VA Ledentsov, NN Bimberg, D Musikhin, YG Neumann, W
Citation: Mv. Maximov et al., Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors, PHYS REV B, 62(24), 2000, pp. 16671-16680
Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m
Authors: Tsatsul'nikov, AF Kovsh, AR Zhukov, AE Shernyakov, YM Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Alferov, ZI Mintairov, AM Merz, JL Ledentsov, NN Bimberg, D
Citation: Af. Tsatsul'Nikov et al., Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m, J APPL PHYS, 88(11), 2000, pp. 6272-6275
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
Authors: Vilisova, MD Ivonin, IV Lavrentieva, LG Subach, SV Yakubenya, MP Preobrazhenskii, VV Putyato, MA Semyagin, BR Bert, NA Musikhin, YG Chaldyshev, VV
Citation: Md. Vilisova et al., Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy, SEMICONDUCT, 33(8), 1999, pp. 824-829
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
Authors: Tsatsul'nikov, AF Bedarev, DA Volovik, BV Ivanov, SV Maksimov, MV Musikhin, YG Ledentsov, NN Mel'tser, BY Solov'ev, VA Kop'ev, PS Chernyshov, AY Belousov, MV
Citation: Af. Tsatsul'Nikov et al., Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface, SEMICONDUCT, 33(8), 1999, pp. 886-888
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Authors: Volovik, BV Tsatsul'nikov, AF Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Suvorova, AA Ustinov, VM Kop'ev, PS Alferov, ZI Bimberg, D Werner, P
Citation: Bv. Volovik et al., Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands, SEMICONDUCT, 33(8), 1999, pp. 901-905
Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Egorov, AY Maleev, NA Ustinov, VM Volovik, BV Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Shernyakov, YM Lunev, AV Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI
Citation: Ae. Zhukov et al., Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates, SEMICONDUCT, 33(2), 1999, pp. 153-156
Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
Authors: Sobolev, MM Kovsh, AR Ustinov, VM Egorov, AY Zhukov, AE Musikhin, YG
Citation: Mm. Sobolev et al., Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures, SEMICONDUCT, 33(2), 1999, pp. 157-164
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Shernyakov, YM Mikhrin, SS Maleev, NA Kondrat'eva, EY Livshits, DA Maximov, MV Volovik, BV Bedarev, DA Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate, IEEE PHOTON, 11(11), 1999, pp. 1345-1347
Electron and hole levels of InAs quantum dots in a GaAs matrix
Authors: Henini, M Brounkov, PN Polimeni, A Stoddart, ST Main, PC Eaves, L Kovsh, AR Musikhin, YG Konnikov, SG
Citation: M. Henini et al., Electron and hole levels of InAs quantum dots in a GaAs matrix, SUPERLATT M, 25(1-2), 1999, pp. 105-111
Risultati: 1-25 | 26-34