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Results: 1-25/28
Authors:
TOK ES
NEAVE JH
ASHWIN MJ
JOYCE BA
JONES TS
Citation: Es. Tok et al., GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC, Journal of applied physics, 83(8), 1998, pp. 4160-4167
Authors:
ALLEGRETTI FE
ROBERTS C
NEAVE JH
Citation: Fe. Allegretti et al., MORPHOLOGICAL-STUDY OF GAAS GROWN BY PERIODIC SUPPLY EPITAXY ON (111)B SUBSTRATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 954-957
Authors:
FAHY MR
ZHANG XM
TOK ES
NEAVE JH
VACCARO P
FUJITA K
TAKAHASHI M
WATANABE T
SATO K
JOYCE BA
Citation: Mr. Fahy et al., MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES, Thin solid films, 306(2), 1997, pp. 192-197
Authors:
TOK ES
NEAVE JH
ZHANG J
JOYCE BA
JONES TS
Citation: Es. Tok et al., ARSENIC INCORPORATION KINETICS IN GAAS(001) HOMOEPITAXY REVISITED, Surface science, 374(1-3), 1997, pp. 397-405
Authors:
TOK ES
NEAVE JH
ALLEGRETTI FE
ZHANG J
JONES TS
JOYCE BA
Citation: Es. Tok et al., INCORPORATION KINETICS OF AS-2 AND AS-4 ON GAAS(110), Surface science, 371(2-3), 1997, pp. 277-288
Authors:
BELK JG
SUDIJONO JL
ZHANG XM
NEAVE JH
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SURFACE CONTRAST IN 2 DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS GAAS(110) HETEROEPITAXY/, Physical review letters, 78(3), 1997, pp. 475-478
Authors:
TOK ES
NEAVE JH
FAHY MR
ALLEGRETTI FE
ZHANG J
JONES TS
JOYCE BA
Citation: Es. Tok et al., INFLUENCE OF ARSENIC INCORPORATION ON SURFACE-MORPHOLOGY AND SI DOPING IN GAAS(110) HOMOEPITAXY, Microelectronics, 28(8-10), 1997, pp. 833-839
Authors:
TOK ES
JONES TS
NEAVE JH
ZHANG J
JOYCE BA
Citation: Es. Tok et al., IS THE ARSENIC INCORPORATION KINETICS IMPORTANT WHEN GROWING GAAS(001), GAAS(110), AND GAAS(111)A FILMS, Applied physics letters, 71(22), 1997, pp. 3278-3280
Authors:
JOYCE BA
NEAVE JH
FAHY MR
SATO K
HOLMES DM
BELK JG
SUDIJONO JL
JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 849-853
Authors:
NAJI O
ZHANG J
KANEKO T
JONES TS
NEAVE JH
JOYCE BA
Citation: O. Naji et al., A DETAILED TIME-OF-FLIGHT STUDY OF THE CRACKING PATTERN OF TRIMETHYLGALLIUM - IMPLICATIONS FOR MOMBE GROWTH, Journal of crystal growth, 164(1-4), 1996, pp. 58-65
Authors:
JOYCE BA
SHITARA T
FAHY MR
SATO K
NEAVE JH
FAWCETT PN
KAMIYA I
ZHANG XM
Citation: Ba. Joyce et al., MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 87-97
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110), Surface science, 341(1-2), 1995, pp. 133-141
Authors:
SATO K
FAHY MR
KAMIYA I
NEAVE JH
JOYCE BA
Citation: K. Sato et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 77-80
Authors:
ZHANG XM
PASHLEY DW
KAMIYA I
NEAVE JH
JOYCE BA
Citation: Xm. Zhang et al., THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES, Journal of crystal growth, 147(1-2), 1995, pp. 234-237
Authors:
ZHANG X
PASHLEY DW
NEAVE JH
HART L
JOYCE BA
Citation: X. Zhang et al., THE STRAIN RELAXATION OF IN0.1GA0.9AS ON GAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 78(11), 1995, pp. 6454-6457
DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(19), 1995, pp. 2848-2850
Authors:
JOYCE BA
ZHANG XM
NEAVE JH
FAWCETT PN
FAHY MR
SATO K
KAMIYA I
Citation: Ba. Joyce et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITY OSCILLATIONS - GROWTH MODES AND GROWTH-RATES - A CRITIQUE, Scanning microscopy, 8(4), 1994, pp. 913-924
Authors:
FAWCETT PN
NEAVE JH
ZHANG J
JOYCE BA
Citation: Pn. Fawcett et al., STUDY OF THE EPITAXIAL-GROWTH OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1201-1203
Authors:
JOYCE BA
OHTANI N
MOKLER SM
SHITARA T
ZHANG J
NEAVE JH
FAWCETT PN
Citation: Ba. Joyce et al., APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE, Surface science, 298(2-3), 1993, pp. 399-407
Authors:
FAWCETT PN
NEAVE JH
ZHANG J
JOYCE BA
Citation: Pn. Fawcett et al., THE OBSERVATION OF MONOLAYER AND BILAYER GROWTH DURING THE DEPOSITIONOF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Surface science, 296(1), 1993, pp. 67-74
Authors:
ARMSTRONG SR
HOARE RD
PEMBLE ME
POVEY IM
STAFFORD A
TAYLOR AG
JOYCE BA
NEAVE JH
ZHANG J
Citation: Sr. Armstrong et al., OPTICAL 2ND-HARMONIC GENERATION STUDIES OF THE NATURE OF THE OXIDE-COVERED AND CLEAN C(4X4) AND (2X4) RECONSTRUCTED GAAS(001) SURFACES, Surface science, 291(3), 1993, pp. 120000751-120000755
Authors:
ZHANG X
PASHLEY DW
NEAVE JH
FAWCETT PN
ZHANG J
JOYCE BA
Citation: X. Zhang et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 132(1-2), 1993, pp. 331-334
Authors:
ZHANG X
PASHLEY DW
HART L
NEAVE JH
FAWCETT PN
JOYCE BA
Citation: X. Zhang et al., THE MORPHOLOGY AND ASYMMETRIC STRAIN RELIEF BEHAVIOR OF INAS FILMS ONGAAS (110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 300-308
Authors:
SHITARA T
ZHANG J
NEAVE JH
JOYCE BA
Citation: T. Shitara et al., AS GA RATIO DEPENDENCE OF GA ADATOM INCORPORATION KINETICS AT STEPS ON VICINAL GAAS(001) SURFACES/, Journal of crystal growth, 127(1-4), 1993, pp. 494-498