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Results: 1-25 | 26-33
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ON MICROPIPES AND NANOPIPES IN SIC AND GAN
Authors: PIROUZ P
Citation: P. Pirouz, ON MICROPIPES AND NANOPIPES IN SIC AND GAN, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 78(3), 1998, pp. 727-736
AN OPTICAL AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFORMATION-INDUCED DEFECTS IN 6H-SIC
Authors: SAMANT AV WEI XL PIROUZ P
Citation: Av. Samant et al., AN OPTICAL AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFORMATION-INDUCED DEFECTS IN 6H-SIC, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 78(3), 1998, pp. 737-746
DISLOCATIONS IN 6H-SIC AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF N-TYPE CRYSTALS
Authors: TILLAY V PAILLOUX F DENANOT MF PIROUZ P RABIER J DEMENET JL BARBOT JF
Citation: V. Tillay et al., DISLOCATIONS IN 6H-SIC AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF N-TYPE CRYSTALS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2(2), 1998, pp. 111-115
HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF METAL CERAMICS INTERFACES/
Authors: IKUHARA Y PIROUZ P
Citation: Y. Ikuhara et P. Pirouz, HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF METAL CERAMICS INTERFACES/, Microscopy research and technique, 40(3), 1998, pp. 206-241
EFFECT OF TEST TEMPERATURE AND STRAIN-RATE ON THE YIELD STRESS OF MONOCRYSTALLINE 6H-SIC
Authors: SAMANT AV ZHOU WL PIROUZ P
Citation: Av. Samant et al., EFFECT OF TEST TEMPERATURE AND STRAIN-RATE ON THE YIELD STRESS OF MONOCRYSTALLINE 6H-SIC, Physica status solidi. a, Applied research, 166(1), 1998, pp. 155-169
A DISCLINATION MODEL FOR THE TWIN-TWIN INTERSECTION AND THE FORMATIONOF DIAMOND-HEXAGONAL SILICON AND GERMANIUM
Authors: MULLNER P PIROUZ P
Citation: P. Mullner et P. Pirouz, A DISCLINATION MODEL FOR THE TWIN-TWIN INTERSECTION AND THE FORMATIONOF DIAMOND-HEXAGONAL SILICON AND GERMANIUM, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 233(1-2), 1997, pp. 139-144
CHEMOMECHANICAL POLISHING OF SILICON-CARBIDE
Authors: ZHOU L AUDURIER V PIROUZ P POWELL JA
Citation: L. Zhou et al., CHEMOMECHANICAL POLISHING OF SILICON-CARBIDE, Journal of the Electrochemical Society, 144(6), 1997, pp. 161-163
DISLOCATION CORES AND HARDNESS POLARITY OF 4H-SIC
Authors: NING XJ HUVEY N PIROUZ P
Citation: Xj. Ning et al., DISLOCATION CORES AND HARDNESS POLARITY OF 4H-SIC, Journal of the American Ceramic Society, 80(7), 1997, pp. 1645-1652
FORMATION OF MISFIT DISLOCATIONS WITH INPLANE BURGERS VECTORS IN BORON DIFFUSED (111)SILICON
Authors: NING XJ PIROUZ P
Citation: Xj. Ning et P. Pirouz, FORMATION OF MISFIT DISLOCATIONS WITH INPLANE BURGERS VECTORS IN BORON DIFFUSED (111)SILICON, Acta materialia, 44(5), 1996, pp. 2127-2143
ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .1. BASAL SLIP REVISITED
Authors: BILDESORENSEN JB LAWLOR BF GEIPEL T PIROUZ P HEUER AH LAGERLOF KPD
Citation: Jb. Bildesorensen et al., ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .1. BASAL SLIP REVISITED, Acta materialia, 44(5), 1996, pp. 2145-2152
ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .2. A NEW MODEL OF BASAL TWINNING
Authors: PIROUZ P LAWLOR BF GEIPEL T BILDESORENSEN JB HEUER AH LAGERLOF KPD
Citation: P. Pirouz et al., ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .2. A NEW MODEL OF BASAL TWINNING, Acta materialia, 44(5), 1996, pp. 2153-2164
ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .3. HRTEM OF THE TWIN MATRIX INTERFACE/
Authors: GEIPEL T BILDESORENSEN JB LAWLOR BF PIROUZ P LAGERLOF KPD HEUER AH
Citation: T. Geipel et al., ON BASAL SLIP AND BASAL TWINNING IN SAPPHIRE (ALPHA-AL2O3) .3. HRTEM OF THE TWIN MATRIX INTERFACE/, Acta materialia, 44(5), 1996, pp. 2165-2174
A LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF THE CORE NATURE OF DISLOCATIONS IN 3C-SIC
Authors: NING XJ PIROUZ P
Citation: Xj. Ning et P. Pirouz, A LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF THE CORE NATURE OF DISLOCATIONS IN 3C-SIC, Journal of materials research, 11(4), 1996, pp. 884-894
GROWTH DEFECTS IN GAN FILMS ON SAPPHIRE - THE PROBABLE ORIGIN OF THREADING DISLOCATIONS
Authors: NING XJ CHIEN FR PIROUZ P YANG JW KHAN MA
Citation: Xj. Ning et al., GROWTH DEFECTS IN GAN FILMS ON SAPPHIRE - THE PROBABLE ORIGIN OF THREADING DISLOCATIONS, Journal of materials research, 11(3), 1996, pp. 580-592
FILM SUBSTRATE ORIENTATION RELATIONSHIP IN THE ALN/6H-SIC EPITAXIAL SYSTEM/
Authors: STEMMER S PIROUZ P IKUHARA Y DAVIS RF
Citation: S. Stemmer et al., FILM SUBSTRATE ORIENTATION RELATIONSHIP IN THE ALN/6H-SIC EPITAXIAL SYSTEM/, Physical review letters, 77(9), 1996, pp. 1797-1800
EPITAXIAL-GROWTH OF 3C-SIC ON SI(111) FROM HEXAMETHYLDISILANE
Authors: WU CH JACOB C NING XJ NISHINO S PIROUZ P
Citation: Ch. Wu et al., EPITAXIAL-GROWTH OF 3C-SIC ON SI(111) FROM HEXAMETHYLDISILANE, Journal of crystal growth, 158(4), 1996, pp. 480-490
GROWTH DEFECTS IN GAN FILMS ON 6H-SIC SUBSTRATES
Authors: CHIEN FR NING XJ STEMMER S PIROUZ P BREMSER MD DAVIS RF
Citation: Fr. Chien et al., GROWTH DEFECTS IN GAN FILMS ON 6H-SIC SUBSTRATES, Applied physics letters, 68(19), 1996, pp. 2678-2680
INDENTATION-INDUCED DISLOCATIONS AND MICROTWINS GASB AND GAAS
Authors: NING XJ PEREZ T PIROUZ P
Citation: Xj. Ning et al., INDENTATION-INDUCED DISLOCATIONS AND MICROTWINS GASB AND GAAS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(4), 1995, pp. 837-859
STRUCTURE OF V-MGO AND MGO-V INTERFACES
Authors: IKUHARA Y PIROUZ P YADAVALLI S FLYNN CP
Citation: Y. Ikuhara et al., STRUCTURE OF V-MGO AND MGO-V INTERFACES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(1), 1995, pp. 179-198
EPITAXIAL-GROWTH OF 3C-SIC FILMS ON 4 INCH DIAM (100)SILICON-WAFERS BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: ZORMAN CA FLEISCHMAN AJ DEWA AS MEHREGANY M JACOB C NISHINO S PIROUZ P
Citation: Ca. Zorman et al., EPITAXIAL-GROWTH OF 3C-SIC FILMS ON 4 INCH DIAM (100)SILICON-WAFERS BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(8), 1995, pp. 5136-5138
INFLUENCE OF H-2 ADDITION AND GROWTH TEMPERATURE ON CVD OF SIC USING HEXAMETHYLDISILANE AND AR
Authors: NORDELL N NISHINO S YANG JW JACOB C PIROUZ P
Citation: N. Nordell et al., INFLUENCE OF H-2 ADDITION AND GROWTH TEMPERATURE ON CVD OF SIC USING HEXAMETHYLDISILANE AND AR, Journal of the Electrochemical Society, 142(2), 1995, pp. 565-571
A ZONAL DISLOCATION MECHANISM FOR RHOMBOHEDRAL TWINNING IN SAPPHIRE (ALPHA-AL2O3)
Authors: GEIPEL T LAGERLOF KPD PIROUZ P HEUER AH
Citation: T. Geipel et al., A ZONAL DISLOCATION MECHANISM FOR RHOMBOHEDRAL TWINNING IN SAPPHIRE (ALPHA-AL2O3), Acta metallurgica et materialia, 42(4), 1994, pp. 1367-1372
HETEROEPITAXY OF DIAMOND ON C-BN - GROWTH MECHANISMS AND DEFECT CHARACTERIZATION
Authors: ARGOITIA A ANGUS JC MA JS WANG L PIROUZ P LAMBRECHT WRL
Citation: A. Argoitia et al., HETEROEPITAXY OF DIAMOND ON C-BN - GROWTH MECHANISMS AND DEFECT CHARACTERIZATION, Journal of materials research, 9(7), 1994, pp. 1849-1865
STRUCTURE OF V-AL2O3 INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: IKUHARA Y PIROUZ P HEUER AH YADAVALLI S FLYNN CP
Citation: Y. Ikuhara et al., STRUCTURE OF V-AL2O3 INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 70(1), 1994, pp. 75-97
GROWTH OF 2H-SIC ON 6H-SIC BY PULSED-LASER ABLATION
Authors: STAN MA PATTON MO WARNER JD YANG JW PIROUZ P
Citation: Ma. Stan et al., GROWTH OF 2H-SIC ON 6H-SIC BY PULSED-LASER ABLATION, Applied physics letters, 64(20), 1994, pp. 2667-2669
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