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Results: 1-23 |
Results: 23
Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Shengurov, DV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy, SEMICONDUCT, 35(8), 2001, pp. 918-923
Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon
Authors: Job, R Ulyashin, AG Fahrner, WR Ivanov, AI Palmetshofer, L
Citation: R. Job et al., Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon, APPL PHYS A, 72(3), 2001, pp. 325-332
Range of ion-implanted rare earth elements in Si and SiO2
Authors: Palmetshofer, L Gritsch, M Hobler, G
Citation: L. Palmetshofer et al., Range of ion-implanted rare earth elements in Si and SiO2, MAT SCI E B, 81(1-3), 2001, pp. 83-85
Optimisation of Er centers in Si for reverse biased light emitting diodes
Authors: Jantsch, W Kocher, G Palmetshofer, L Przybylinska, H Stepikhova, M Preier, H
Citation: W. Jantsch et al., Optimisation of Er centers in Si for reverse biased light emitting diodes, MAT SCI E B, 81(1-3), 2001, pp. 86-90
The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., The kinetics of Er related electroluminescence in single crystal tunnelinglight emitting diodes based on (111)-oriented silicon, IAN FIZ, 65(2), 2001, pp. 285-288
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Palmetshofer, L Ellmer, H
Citation: Vg. Shengurov et al., Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy, IAN FIZ, 65(2), 2001, pp. 289-291
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000)
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000), THIN SOL FI, 381(1), 2001, pp. 164-169
Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures
Authors: Thor, E Muhlberger, M Palmetshofer, L Schaffler, F
Citation: E. Thor et al., Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures, J APPL PHYS, 90(5), 2001, pp. 2252-2256
Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method
Authors: Stepikhova, MV Andreev, BA Shmagin, VB Krasil'nik, ZF Kuznetsov, VP Shengurov, VG Svetlov, SP Jantsch, W Palmetshofer, L Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method, THIN SOL FI, 369(1-2), 2000, pp. 426-430
Characterization of the element distribution within TiN coatings with SIMS
Authors: Kolber, T Piplits, K Palmetshofer, L Hutter, H
Citation: T. Kolber et al., Characterization of the element distribution within TiN coatings with SIMS, MIKROCH ACT, 135(1-2), 2000, pp. 105-111
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Krasil'nik, ZF Stepikhova, MV Shmagin, VB Kuznetsov, VP Rubtsova, RA Uskova, EA Karpov, YA Ellmer, H Palmetshofer, L Piplits, K Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
On the generation of optically active Er centers in Si light emitting diodes
Authors: Jantsch, W Lanzerstorfer, S Palmetshofer, L Stepikhova, M Kocher, G Preier, H
Citation: W. Jantsch et al., On the generation of optically active Er centers in Si light emitting diodes, PHYSICA B, 274, 1999, pp. 330-333
Low Z total reflection X-ray fluorescence analysis - challenges and answers
Authors: Streli, C Kregsamer, P Wobrauschek, P Gatterbauer, H Pianetta, P Pahlke, S Fabry, L Palmetshofer, L Schmeling, M
Citation: C. Streli et al., Low Z total reflection X-ray fluorescence analysis - challenges and answers, SPECT ACT B, 54(10), 1999, pp. 1433-1441
Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Er-related photoluminescence in porous silicon. Optically active erbium centers
Authors: Stepikhova, MV Jantsch, W Palmetshofer, L von Bardeleben, J
Citation: Mv. Stepikhova et al., Er-related photoluminescence in porous silicon. Optically active erbium centers, IAN FIZ, 63(2), 1999, pp. 400-405
Mechanical strain and electrically active defects in Si implanted with Ge+ions
Authors: Suprun-Belevich, Y Palmetshofer, L Sealy, BJ Emerson, N
Citation: Y. Suprun-belevich et al., Mechanical strain and electrically active defects in Si implanted with Ge+ions, SEMIC SCI T, 14(6), 1999, pp. 565-569
Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry
Authors: Klockenkamper, R von Bohlen, A Becker, HW Palmetshofer, L
Citation: R. Klockenkamper et al., Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry, SURF INT AN, 27(11), 1999, pp. 1003-1008
Synchrotron radiation-excited glancing incidence XRF for depth profile andthin-film analysis of light elements
Authors: Kregsamer, P Streli, C Wobrauschek, P Gatterbauer, H Pianetta, P Palmetshofer, L Brehm, LL
Citation: P. Kregsamer et al., Synchrotron radiation-excited glancing incidence XRF for depth profile andthin-film analysis of light elements, X-RAY SPECT, 28(4), 1999, pp. 292-296
Optical Er-doping of Si during sublimational molecular beam epitaxy
Authors: Andreev, BA Andreev, AY Ellmer, H Hutter, H Krasil'nik, ZF Kuznetsov, VP Lanzerstorfer, S Palmetshofer, L Piplits, K Rubtsova, RA Sokolov, NS Shmagin, VB Stepikhova, MV Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537
Room-temperature photoluminescence excitation spectroscopy of Er3+ ions inEr- and (Er plus Yb)-doped SiO2 films
Authors: Kozanecki, A Przybylinska, H Jantsch, W Palmetshofer, L
Citation: A. Kozanecki et al., Room-temperature photoluminescence excitation spectroscopy of Er3+ ions inEr- and (Er plus Yb)-doped SiO2 films, APPL PHYS L, 75(14), 1999, pp. 2041-2043
1.5 mu m infrared photoluminescence phenomena in Er-doped porous silicon
Authors: Stepikhova, M Palmetshofer, L Jantsch, W von Bardeleben, HJ Gaponenko, NV
Citation: M. Stepikhova et al., 1.5 mu m infrared photoluminescence phenomena in Er-doped porous silicon, APPL PHYS L, 74(4), 1999, pp. 537-539
Different Er centres in Si and their use for electroluminescent devices
Authors: Jantsch, W Lanzerstorfer, S Palmetshofer, L Stepikhova, M Preier, H
Citation: W. Jantsch et al., Different Er centres in Si and their use for electroluminescent devices, J LUMINESC, 80(1-4), 1998, pp. 9-17
On the origin of 1.5 mu m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films
Authors: Gaponenko, NV Mudryi, AV Sergeev, OV Stepikhova, M Palmetshofer, L Jantsch, W Pivin, JC Hamilton, B Baran, AS Rat'ko, AI
Citation: Nv. Gaponenko et al., On the origin of 1.5 mu m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films, J LUMINESC, 80(1-4), 1998, pp. 399-403
Risultati: 1-23 |