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Results: 26-45/45
Authors:
Kiriakidis, G
Moschovis, K
Uusimaa, P
Salokatve, A
Pessa, M
Stoemenos, J
Citation: G. Kiriakidis et al., Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue-green laser diodes, THIN SOL FI, 360(1-2), 2000, pp. 195-204
Authors:
Li, W
Likonen, J
Haapamaa, J
Pessa, M
Citation: W. Li et al., Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 459-462
Authors:
Li, W
Likonen, J
Haapamaa, J
Pessa, M
Citation: W. Li et al., Study of concentration-dependent Be diffusion in GaInP layers grown by gassource molecular beam epitaxy, J APPL PHYS, 87(10), 2000, pp. 7592-7593
Authors:
Saarinen, M
Toivonen, M
Xiang, N
Vilokkinen, V
Pessa, M
Citation: M. Saarinen et al., Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, ELECTR LETT, 36(14), 2000, pp. 1210-1211
Authors:
Xiang, N
Lammasniemi, J
Kazantsev, AB
Pessa, M
Citation: N. Xiang et al., Study of light absorption in n-type and p-type GaInAs and the possibility of making 1.55-mu m GaInAs InP Bragg mirrors, J MAT S-M E, 10(4), 1999, pp. 255-257
Authors:
Oila, J
Saarinen, K
Laine, T
Hautojarvi, P
Uusimaa, P
Pessa, M
Likonen, J
Citation: J. Oila et al., The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements, PHYSICA B, 274, 1999, pp. 902-906
Authors:
Rinta-Moykky, A
Uusimaa, P
Suhonen, S
Valden, M
Salokatve, A
Pessa, M
Likonen, J
Citation: A. Rinta-moykky et al., Study of ohmic multilayer metal contacts to p-type ZnSe, J VAC SCI A, 17(2), 1999, pp. 347-353
Authors:
Savolainen, P
Toivonen, M
Orsila, S
Saarinen, M
Melanen, P
Vilokkinen, V
Dumitrescu, M
Panarello, T
Pessa, M
Citation: P. Savolainen et al., AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy, J ELEC MAT, 28(8), 1999, pp. 980-985
Authors:
Dumitrescu, M
Toivonen, M
Savolainen, P
Orsila, S
Pessa, M
Citation: M. Dumitrescu et al., High-power edge emitting red laser diode optimisation using optical simulation, OPT QUANT E, 31(9-10), 1999, pp. 1009-1030
Authors:
Savolainen, P
Toivonen, M
Pessa, M
Corvini, P
Jansen, M
Nabiev, RF
Citation: P. Savolainen et al., Red lasers grown by all-solid-source molecular beam epitaxy, SEMIC SCI T, 14(5), 1999, pp. 425-429
Authors:
Oila, J
Saarinen, K
Laine, T
Hautojarvi, P
Uusimaa, P
Pessa, M
Likonen, J
Citation: J. Oila et al., Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94, PHYS REV B, 59(20), 1999, pp. R12736-R12739
Authors:
Rinta-Moykky, A
Laukkanen, P
Lehkonen, S
Laaksonen, S
Dekker, J
Tukiainen, A
Uusimaa, P
Pessa, M
Citation: A. Rinta-moykky et al., Plasma-assisted MBE growth of GaN on HVPE-GaN substrates, PHYS ST S-A, 176(1), 1999, pp. 465-468
Authors:
Toivonen, M
Savolainen, P
Orsila, S
Vilokkinen, V
Pessa, M
Corvini, P
Fang, F
Nabiev, RF
Jansen, M
Citation: M. Toivonen et al., Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes, J CRYST GR, 202, 1999, pp. 877-881
Authors:
Orsila, S
Kongas, J
Toivonen, M
Savolainen, P
Jalonen, M
Pessa, M
Citation: S. Orsila et al., Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes, J CRYST GR, 202, 1999, pp. 985-989
Authors:
Uusimaa, P
Sipila, P
Saarinen, M
Toikkanen, L
Rinta-Moykky, A
Pessa, M
Citation: P. Uusimaa et al., Molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes using in situ reflectance monitoring, J CRYST GR, 202, 1999, pp. 1032-1035
Authors:
Dekker, J
Tukiainen, A
Xiang, N
Orsila, S
Saarinen, M
Toivonen, M
Pessa, M
Tkachenko, N
Lemmetyinen, H
Citation: J. Dekker et al., Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy, J APPL PHYS, 86(7), 1999, pp. 3709-3713
Authors:
Slotte, J
Salonen, R
Ahlgren, T
Rauhala, E
Keinonen, J
Raisanen, J
Uusimaa, P
Salokatve, A
Pessa, M
Laakso, A
Citation: J. Slotte et al., Diffusion of Au in ZnSe and its dependence on crystal quality, J APPL PHYS, 85(2), 1999, pp. 799-802
Authors:
Souifi, A
Adhiri, R
Le Dantec, R
Guillot, G
Uusimaa, P
Rinta-Moykky, A
Pessa, M
Citation: A. Souifi et al., ZnSe GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements, J APPL PHYS, 85(11), 1999, pp. 7759-7763
Authors:
Nowak, R
Pessa, M
Suganuma, M
Leszczynski, M
Grzegory, I
Porowski, S
Yoshida, F
Citation: R. Nowak et al., Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal, APPL PHYS L, 75(14), 1999, pp. 2070-2072
Authors:
Dekker, JR
Tukiainen, A
Jaakkola, R
Vakevainen, K
Lammasniemi, J
Pessa, M
Citation: Jr. Dekker et al., Majority carrier traps in proton-irradiated GaInP, APPL PHYS L, 73(24), 1998, pp. 3559-3561