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Results: 1-18 |
Results: 18
Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics
Authors: Koitzsch, C Conrad, D Scheerschmidt, K Scharmann, F Maslarski, P Pezoldt, J
Citation: C. Koitzsch et al., Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics, APPL SURF S, 179(1-4), 2001, pp. 49-54
Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields
Authors: Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Scharmann, F Pezoldt, J
Citation: Pv. Rybin et al., Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields, NUCL INST B, 178, 2001, pp. 269-274
Elasticity-based approach of interfaces: Application to heteroepitaxy and hetero-systems
Authors: Masri, P Stauden, T Pezoldt, J Averous, M
Citation: P. Masri et al., Elasticity-based approach of interfaces: Application to heteroepitaxy and hetero-systems, PHYS ST S-A, 187(2), 2001, pp. 439-469
The influence of surface preparation on the properties of SiC on Si(111)
Authors: Pezoldt, J Schroter, B Cimalla, V Masri, P
Citation: J. Pezoldt et al., The influence of surface preparation on the properties of SiC on Si(111), PHYS ST S-A, 185(1), 2001, pp. 159-166
Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth
Authors: Masri, P Laridjani, MR Wohner, T Pezoldt, J Averous, M
Citation: P. Masri et al., Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth, COMP MAT SC, 17(2-4), 2000, pp. 544-550
The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation
Authors: Pezoldt, J Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Kreissig, U
Citation: J. Pezoldt et al., The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation, NUCL INST B, 166, 2000, pp. 758-763
Investigation of the nucleation and growth of SiC nanostructures on Si
Authors: Scharmann, F Maslarski, P Attenberger, W Lindner, JKN Stritzker, B Stauden, T Pezoldt, J
Citation: F. Scharmann et al., Investigation of the nucleation and growth of SiC nanostructures on Si, THIN SOL FI, 380(1-2), 2000, pp. 92-96
Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces
Authors: Wohner, T Cimalla, V Stauden, T Schaefer, JA Pezoldt, J
Citation: T. Wohner et al., Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces, THIN SOL FI, 364(1-2), 2000, pp. 28-32
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
Authors: Romanus, H Cimalla, V Schaefer, JA Spiess, L Ecke, G Pezoldt, J
Citation: H. Romanus et al., Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers, THIN SOL FI, 359(2), 2000, pp. 146-149
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates
Authors: As, DJ Frey, T Schikora, D Lischka, K Cimalla, V Pezoldt, J Goldhahn, R Kaiser, S Gebhardt, W
Citation: Dj. As et al., Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates, APPL PHYS L, 76(13), 2000, pp. 1686-1688
The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
Authors: Ecke, G Kosiba, R Pezoldt, J Rossler, H
Citation: G. Ecke et al., The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers, FRESEN J AN, 365(1-3), 1999, pp. 195-198
Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods
Authors: Pezoldt, J Yankov, RA Werninghaus, T Zahn, DRT Fukarek, W Teichert, G Luebbe, M Skorupa, W
Citation: J. Pezoldt et al., Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods, DIAM RELAT, 8(2-5), 1999, pp. 346-351
Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon
Authors: Scheiner, J Goldhahn, R Cimalla, V Ecke, G Attenberger, W Lindner, JKM Gobsch, G Pezoldt, J
Citation: J. Scheiner et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, MAT SCI E B, 61-2, 1999, pp. 526-530
Structural and morphological investigations of the initial stages in solidsource molecular beam epitaxy of SiC on (111)Si
Authors: Attenberger, W Lindner, J Cimalla, V Pezoldt, J
Citation: W. Attenberger et al., Structural and morphological investigations of the initial stages in solidsource molecular beam epitaxy of SiC on (111)Si, MAT SCI E B, 61-2, 1999, pp. 544-548
Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
Authors: Cimalla, V Stauden, T Eichhorn, G Pezoldt, J
Citation: V. Cimalla et al., Influence of the heating ramp on the heteroepitaxial growth of SiC on Si, MAT SCI E B, 61-2, 1999, pp. 553-558
A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams
Authors: Pezoldt, J Yankov, RA Mucklich, A Fukarek, W Voelskow, M Reuther, H Skorupa, W
Citation: J. Pezoldt et al., A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams, NUCL INST B, 147(1-4), 1999, pp. 273-278
Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
Authors: Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Ecke, G Fukarek, W Skorupa, W Pezoldt, J
Citation: Pv. Rybin et al., Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions, NUCL INST B, 147(1-4), 1999, pp. 279-285
Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
Authors: Cimalla, V Stauden, T Ecke, G Scharmann, F Eichhorn, G Pezoldt, J Sloboshanin, S Schaefer, JA
Citation: V. Cimalla et al., Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy, APPL PHYS L, 73(24), 1998, pp. 3542-3544
Risultati: 1-18 |