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Results: 1-25 | 26-32
Results: 1-25/32
DUV RESIST UV-II HS APPLIED TO HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND TO MASKED ION-BEAM PROXIMITY AND REDUCTION PRINTING
Authors: BRUENGER WH BUSCHBECK H CEKAN E EDER S FEDYNYSHYN TH HERTLEIN WG HUDEK P KOSTIC I LOESCHNER H RANGELOW IW TORKLER M
Citation: Wh. Bruenger et al., DUV RESIST UV-II HS APPLIED TO HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND TO MASKED ION-BEAM PROXIMITY AND REDUCTION PRINTING, Microelectronic engineering, 42, 1998, pp. 237-240
FABRICATION OF MULTIPURPOSE AFM SCM/SEP MICROPROBE WITH INTEGRATED PIEZORESISTIVE DEFLECTION SENSOR AND ISOLATED CONDUCTIVE TIP/
Authors: GOTSZALK T GRABIEC P SHI F DUMANIA P HUDEK P RANGELOW IW
Citation: T. Gotszalk et al., FABRICATION OF MULTIPURPOSE AFM SCM/SEP MICROPROBE WITH INTEGRATED PIEZORESISTIVE DEFLECTION SENSOR AND ISOLATED CONDUCTIVE TIP/, Microelectronic engineering, 42, 1998, pp. 477-480
ULTRASHARP DIAMOND-COATED SILICON TIPS FOR SCANNING-PROBE DEVICES
Authors: GIVARGIZOV EI STEPANOVA AN MASHKOVA ES MOLCHANOV VA SHI F HUDEK P RANGELOW IW
Citation: Ei. Givargizov et al., ULTRASHARP DIAMOND-COATED SILICON TIPS FOR SCANNING-PROBE DEVICES, Microelectronic engineering, 42, 1998, pp. 499-502
DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY
Authors: HUDEK P KOSTIC I BELOV M RANGELOW IW SHI F PAWLOWSKI G SPIESS W BUSCHBECK H CEKAN E EDER S LOSCHNER H
Citation: P. Hudek et al., DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2550-2554
REACTIVE ION ETCHING FOR HIGH-ASPECT-RATIO SILICON MICROMACHINING
Authors: RANGELOW IW
Citation: Iw. Rangelow, REACTIVE ION ETCHING FOR HIGH-ASPECT-RATIO SILICON MICROMACHINING, Surface & coatings technology, 97(1-3), 1997, pp. 140-150
THE INTEGRATION OF CMOS WITH PLASMA-ENHANCED MICROMACHINING
Authors: GRABIEC PB GOTSZALK T SHI F HUDEK P DUMANIA P RANGELOW IW
Citation: Pb. Grabiec et al., THE INTEGRATION OF CMOS WITH PLASMA-ENHANCED MICROMACHINING, Surface & coatings technology, 97(1-3), 1997, pp. 475-480
FABRICATION OF HIGH-ASPECT-RATIO STRUCTURES USING CHLORINE GAS CHOPPING TECHNIQUE
Authors: PAUL AK RANGELOW IW
Citation: Ak. Paul et Iw. Rangelow, FABRICATION OF HIGH-ASPECT-RATIO STRUCTURES USING CHLORINE GAS CHOPPING TECHNIQUE, Microelectronic engineering, 35(1-4), 1997, pp. 79-82
SCANNING PROBE SHARP TIP FORMATION FOR IC INTEGRATION USING MESA TECHNIQUE
Authors: GRABIEC PB SHI F HUDEK P GOTSZALK T ZABROWSKI M DUMANIA P RANGELOW IW
Citation: Pb. Grabiec et al., SCANNING PROBE SHARP TIP FORMATION FOR IC INTEGRATION USING MESA TECHNIQUE, Microelectronic engineering, 35(1-4), 1997, pp. 329-332
ATOMIC-FORCE MICROSCOPY AND LATERAL FORCE MICROSCOPY USING PIEZORESISTIVE CANTILEVERS
Authors: LINNEMANN R GOTSZALK T RANGELOW IW DUMANIA P OESTERSCHULZE E
Citation: R. Linnemann et al., ATOMIC-FORCE MICROSCOPY AND LATERAL FORCE MICROSCOPY USING PIEZORESISTIVE CANTILEVERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 856-860
SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING
Authors: RANGELOW IW SHI F HUDEK P KOSTIC I HAMMEL E LOSCHNER H STENGL G CEKAN E
Citation: Iw. Rangelow et al., SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 257-260
EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING
Authors: HUDEK P RANGELOW IW KOSTIC I MUNZEL N DARAKTCHIEV I
Citation: P. Hudek et al., EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING, Microelectronic engineering, 30(1-4), 1996, pp. 309-312
BILAYER RESIST PROCESS FOR EXPOSURE WITH LOW-VOLTAGE ELECTRONS (STM-LITHOGRAPHY)
Authors: LEUSCHNER R GUNTHER E FALK G HAMMERSCHMIDT A KRAGLER K RANGELOW IW ZIMMERMANN J
Citation: R. Leuschner et al., BILAYER RESIST PROCESS FOR EXPOSURE WITH LOW-VOLTAGE ELECTRONS (STM-LITHOGRAPHY), Microelectronic engineering, 30(1-4), 1996, pp. 447-450
ION ENERGY-DISTRIBUTIONS IN SF6 PLASMAS AT A RADIOFREQUENCY POWERED ELECTRODE
Authors: BECKER F RANGELOW IW KASSING R
Citation: F. Becker et al., ION ENERGY-DISTRIBUTIONS IN SF6 PLASMAS AT A RADIOFREQUENCY POWERED ELECTRODE, Journal of applied physics, 80(1), 1996, pp. 56-65
APPLICATION OF PIEZORESISTIVE WHEATSTONE BRIDGE CANTILEVER IN ADVANCED ATOMIC-FORCE MICROSCOPY TECHNIQUES
Authors: GOTSZALK T LINNEMANN R RANGELOW IW GRABIEC P DUMANIA P
Citation: T. Gotszalk et al., APPLICATION OF PIEZORESISTIVE WHEATSTONE BRIDGE CANTILEVER IN ADVANCED ATOMIC-FORCE MICROSCOPY TECHNIQUES, International journal of electronics, 81(4), 1996, pp. 473-483
REACTIVE ION ETCHING FOR MICROELECTRICAL MECHANICAL SYSTEM FABRICATION
Authors: RANGELOW IW LOSCHNER H
Citation: Iw. Rangelow et H. Loschner, REACTIVE ION ETCHING FOR MICROELECTRICAL MECHANICAL SYSTEM FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2394-2399
NEW DESIGN OF A PLASMA CHAMBER FOR HOMOGENEOUS WEB TREATMENT
Authors: LEIBER J SELAFF O STEFFENS F RANGELOW IW
Citation: J. Leiber et al., NEW DESIGN OF A PLASMA CHAMBER FOR HOMOGENEOUS WEB TREATMENT, Surface & coatings technology, 74-5(1-3), 1995, pp. 49-54
DIAGNOSTIC ON N-2 PLASMA WITH AN ENERGY-RESOLVED QUADRUPOLE MASS-SPECTROMETER AT THE POWERED ELECTRODE IN A REACTIVE ION ETCHING SYSTEM - ION ENERGY-DISTRIBUTION OF N-2(+) AND N+
Authors: BECKER F RANGELOW IW MASSELI K KASSING R
Citation: F. Becker et al., DIAGNOSTIC ON N-2 PLASMA WITH AN ENERGY-RESOLVED QUADRUPOLE MASS-SPECTROMETER AT THE POWERED ELECTRODE IN A REACTIVE ION ETCHING SYSTEM - ION ENERGY-DISTRIBUTION OF N-2(+) AND N+, Surface & coatings technology, 74-5(1-3), 1995, pp. 485-490
THE EFFECT OF ION-IMPLANTATION ON THE PROPERTIES OF AL FILMS
Authors: ZABOROWSKI M BARCZ A GAWLIK G RANGELOW IW
Citation: M. Zaborowski et al., THE EFFECT OF ION-IMPLANTATION ON THE PROPERTIES OF AL FILMS, Applied surface science, 91(1-4), 1995, pp. 239-245
QUARTZ ETCHING FOR PHASE-SHIFTING MASKS
Authors: DAHM G RANGELOW IW HUDEK P KOOPS HWP
Citation: G. Dahm et al., QUARTZ ETCHING FOR PHASE-SHIFTING MASKS, Microelectronic engineering, 27(1-4), 1995, pp. 263-266
ON THE APPLICATION OF CHEMICALLY AMPLIFIED POSITIVE RESISTS TO MICROMACHINING
Authors: HUDEK P RANGELOW IW DARAKTCHIEV IS KOSTIC I
Citation: P. Hudek et al., ON THE APPLICATION OF CHEMICALLY AMPLIFIED POSITIVE RESISTS TO MICROMACHINING, Microelectronic engineering, 27(1-4), 1995, pp. 401-404
MEMS FABRICATION BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE)
Authors: RANGELOW IW HUDEK P
Citation: Iw. Rangelow et P. Hudek, MEMS FABRICATION BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE), Microelectronic engineering, 27(1-4), 1995, pp. 471-474
E-BEAM AND RIE EXAMINATION OF CHEMICALLY AMPLIFIED POSITIVE-TONE RESIST CAMP6
Authors: HUDEK P RANGELOW IW DARAKTCHIEV IS KOSTIC I
Citation: P. Hudek et al., E-BEAM AND RIE EXAMINATION OF CHEMICALLY AMPLIFIED POSITIVE-TONE RESIST CAMP6, Microelectronic engineering, 26(3-4), 1995, pp. 167-179
BULK MICROMACHINING OF SI BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE)
Authors: RANGELOW IW HUDEK P SHI F
Citation: Iw. Rangelow et al., BULK MICROMACHINING OF SI BY LITHOGRAPHY AND REACTIVE ION ETCHING (LIRIE), Vacuum, 46(12), 1995, pp. 1361-1369
CHARACTERIZATION OF A CANTILEVER WITH AN INTEGRATED DEFLECTION SENSOR
Authors: LINNEMANN R GOTSZALK T HADJIISKI L RANGELOW IW
Citation: R. Linnemann et al., CHARACTERIZATION OF A CANTILEVER WITH AN INTEGRATED DEFLECTION SENSOR, Thin solid films, 264(2), 1995, pp. 159-164
ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR
Authors: PORGES M SAFRANKOVA J LALINSKY T KOSTIC I RANGELOW IW TEGUDE FJ JAGER D
Citation: M. Porges et al., ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR, Solid-state electronics, 38(2), 1995, pp. 425-427
Risultati: 1-25 | 26-32