ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-30

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ALUMINUM NITRIDE-SILICON CARBIDE SOLID-SOLUTIONS GROWN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors: KERN RS ROWLAND LB TANAKA S DAVIS RF

Citation: Rs. Kern et al., ALUMINUM NITRIDE-SILICON CARBIDE SOLID-SOLUTIONS GROWN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of materials research, 13(7), 1998, pp. 1816-1822

REACTION-KINETICS OF SILICON-CARBIDE DEPOSITION BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors: KERN RS TANAKA S ROWLAND LB DAVIS RF

Citation: Rs. Kern et al., REACTION-KINETICS OF SILICON-CARBIDE DEPOSITION BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 183(4), 1998, pp. 581-593

MEASUREMENT OF THE HALL SCATTERING FACTOR IN 4H AND 6H SIC EPILAYERS FROM 40 TO 290 K AND IN MAGNETIC-FIELDS UP TO 9 T

Authors: RUTSCH G DEVATY RP CHOYKE WJ LANGER DW ROWLAND LB

Citation: G. Rutsch et al., MEASUREMENT OF THE HALL SCATTERING FACTOR IN 4H AND 6H SIC EPILAYERS FROM 40 TO 290 K AND IN MAGNETIC-FIELDS UP TO 9 T, Journal of applied physics, 84(4), 1998, pp. 2062-2064

DEVELOPMENT OF A SILICON-CARBIDE RADIATION DETECTOR

Authors: RUDDY FH DULLOO AR SEIDEL JG SESHADRI S ROWLAND LB

Citation: Fh. Ruddy et al., DEVELOPMENT OF A SILICON-CARBIDE RADIATION DETECTOR, IEEE transactions on nuclear science, 45(3), 1998, pp. 536-541

1.1 KV 4H-SIC POWER UMOSFETS

Authors: AGARWAL AK CASADY JB ROWLAND LB VALEK WF WHITE MH BRANDT CD

Citation: Ak. Agarwal et al., 1.1 KV 4H-SIC POWER UMOSFETS, IEEE electron device letters, 18(12), 1997, pp. 586-588

TEMPERATURE-DEPENDENCE OF FOWLER-NORDHEIM CURRENT IN 6H-SIC AND 4H-SIC MOS CAPACITORS

Authors: AGARWAL AK SESHADRI S ROWLAND LB

Citation: Ak. Agarwal et al., TEMPERATURE-DEPENDENCE OF FOWLER-NORDHEIM CURRENT IN 6H-SIC AND 4H-SIC MOS CAPACITORS, IEEE electron device letters, 18(12), 1997, pp. 592-594

700-V ASYMMETRICAL 4H-SIC GATE TURN-OFF THYRISTORS (GTOS)

Authors: AGARWAL AK CASADY JB ROWLAND LB SESHADRI S SIERGIEJ RR VALEK WF BRANDT CD

Citation: Ak. Agarwal et al., 700-V ASYMMETRICAL 4H-SIC GATE TURN-OFF THYRISTORS (GTOS), IEEE electron device letters, 18(11), 1997, pp. 518-520

HOMOEPITAXIAL VPE GROWTH OF SIC ACTIVE LAYERS

Authors: BURK AA ROWLAND LB

Citation: Aa. Burk et Lb. Rowland, HOMOEPITAXIAL VPE GROWTH OF SIC ACTIVE LAYERS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 263-279

GAS-SOURCE MOLECULAR-BEAM EPITAXY OF III-V NITRIDES

Authors: DAVIS RF PAISLEY MJ SITAR Z KESTER DJ AILEY KS LINTHICUM K ROWLAND LB TANAKA S KERN RS

Citation: Rf. Davis et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF III-V NITRIDES, Journal of crystal growth, 178(1-2), 1997, pp. 87-101

4H-SIC MESFETS WITH 42 GHZ F(MAX)

Authors: SRIRAM S AUGUSTINE G BURK AA GLASS RC HOBGOOD HM ORPHANOS PA ROWLAND LB SMITH TJ BRANDT CD DRIVER MC HOPKINS RH

Citation: S. Sriram et al., 4H-SIC MESFETS WITH 42 GHZ F(MAX), IEEE electron device letters, 17(7), 1996, pp. 369-371

MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GAN AND ALXGA1-XN ON 6H-SIC

Authors: SINHAROY S AUGUSTINE G ROWLAND LB AGARWAL AK MESSHAM RL DRIVER MC HOPKINS RH

Citation: S. Sinharoy et al., MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GAN AND ALXGA1-XN ON 6H-SIC, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 896-899

THE ROLE OF EXCESS SILICON AND IN-SITU ETCHING ON 4H-SIC AND 6H-SIC EPITAXIAL LAYER MORPHOLOGY

Authors: BURK AA ROWLAND LB

Citation: Aa. Burk et Lb. Rowland, THE ROLE OF EXCESS SILICON AND IN-SITU ETCHING ON 4H-SIC AND 6H-SIC EPITAXIAL LAYER MORPHOLOGY, Journal of crystal growth, 167(3-4), 1996, pp. 586-595

GROWTH OF SIC AND III-V NITRIDE THIN-FILMS VIA GAS-SOURCE MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION

Authors: DAVIS RF TANAKA S ROWLAND LB KERN RS SITAR Z AILEY SK WANG C

Citation: Rf. Davis et al., GROWTH OF SIC AND III-V NITRIDE THIN-FILMS VIA GAS-SOURCE MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION, Journal of crystal growth, 164(1-4), 1996, pp. 132-142

REDUCTION OF UNINTENTIONAL ALUMINUM SPIKES AT SIC VAPOR-PHASE EPITAXIAL LAYER SUBSTRATE INTERFACES

Authors: BURK AA ROWLAND LB

Citation: Aa. Burk et Lb. Rowland, REDUCTION OF UNINTENTIONAL ALUMINUM SPIKES AT SIC VAPOR-PHASE EPITAXIAL LAYER SUBSTRATE INTERFACES, Applied physics letters, 68(3), 1996, pp. 382-384

THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE

Authors: DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA

Citation: K. Doverspike et al., THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE, Journal of electronic materials, 24(4), 1995, pp. 269-273

THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES

Authors: GASKILL DK WICKENDEN AE DOVERSPIKE K TADAYON B ROWLAND LB

Citation: Dk. Gaskill et al., THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES, Journal of electronic materials, 24(11), 1995, pp. 1525-1530

DOPING OF GALLIUM NITRIDE USING DISILANE

Authors: WICKENDEN AE ROWLAND LB DOVERSPIKE K GASKILL DK

Citation: Ae. Wickenden et al., DOPING OF GALLIUM NITRIDE USING DISILANE, Journal of electronic materials, 24(11), 1995, pp. 1547-1550

OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

Authors: GLASER ER KENNEDY TA DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA KHAN MA OLSON DT KUZNIA JN WICKENDEN DK

Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336

OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS

Authors: QIAN W SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK

Citation: W. Qian et al., OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS, Journal of crystal growth, 151(3-4), 1995, pp. 396-400

H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN

Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K WICKENDEN DK

Citation: Sc. Binari et al., H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN, Journal of applied physics, 78(5), 1995, pp. 3008-3011

PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE

Authors: KIM SS HERMAN IP TUCHMAN JA DOVERSPIKE K ROWLAND LB GASKILL DK

Citation: Ss. Kim et al., PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 67(3), 1995, pp. 380-382

OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

Authors: QIAN W ROHRER GS SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK

Citation: W. Qian et al., OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 67(16), 1995, pp. 2284-2286

SILICON DOPING OF GAN USING DISILANE

Authors: ROWLAND LB DOVERSPIKE K GASKILL DK

Citation: Lb. Rowland et al., SILICON DOPING OF GAN USING DISILANE, Applied physics letters, 66(12), 1995, pp. 1495-1497

MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY

Authors: QIAN W SKOWRONSKI M DEGRAEF M DOVERSPIKE K ROWLAND LB GASKILL DK

Citation: W. Qian et al., MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Applied physics letters, 66(10), 1995, pp. 1252-1254

MICROWAVE PERFORMANCE OF GAN MESFETS

Authors: BINARI SC ROWLAND LB KRUPPA W KELNER G DOVERSPIKE K GASKILL DK

Citation: Sc. Binari et al., MICROWAVE PERFORMANCE OF GAN MESFETS, Electronics Letters, 30(15), 1994, pp. 1248-1249

Risultati: 1-25 | 26-30