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Results: 1-25/46
Authors:
Niskanen, A
Hatanpaa, T
Ritala, M
Leskela, M
Citation: A. Niskanen et al., Thermogravimetric study of volatile precursors for chemical thin film deposition. Estimation of vapor pressures and source temperatures, J THERM ANA, 64(3), 2001, pp. 955-964
Authors:
Rahtu, A
Hanninen, T
Ritala, M
Citation: A. Rahtu et al., In situ characterization of atomic layer deposition of SrTiO3, J PHYS IV, 11(PR3), 2001, pp. 923-930
Authors:
Kemell, M
Ritala, M
Leskela, M
Citation: M. Kemell et al., Effects of post-deposition treatments on the photoactivity of CuInSe2 thinfilms deposited by the induced co-deposition mechanism, J MAT CHEM, 11(2), 2001, pp. 668-672
Authors:
Juppo, M
Alen, P
Ritala, M
Leskela, M
Citation: M. Juppo et al., Trimethylaluminum as a reducing agent in the atomic layer deposition of Ti(Al)N thin films, CHEM VAPOR, 7(5), 2001, pp. 211-217
Authors:
Vehkamaki, M
Hanninen, T
Ritala, M
Leskela, M
Sajavaara, T
Rauhala, E
Keinonen, J
Citation: M. Vehkamaki et al., Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor-strontium-bis(tri-isopropylcyclopentadienyl), CHEM VAPOR, 7(2), 2001, pp. 75-80
Authors:
Rahtu, A
Ritala, M
Leskela, M
Citation: A. Rahtu et al., Atomic layer deposition of zirconium titanium oxide from titanium isopropoxide and zirconium chloride, CHEM MATER, 13(5), 2001, pp. 1528-1532
Authors:
Rahtu, A
Kukli, K
Ritala, M
Citation: A. Rahtu et al., In situ mass spectrometry study on atomic layer deposition from metal (Ti,Ta, and Nb) ethoxides and water, CHEM MATER, 13(3), 2001, pp. 817-823
Authors:
Rahtu, A
Alaranta, T
Ritala, M
Citation: A. Rahtu et al., In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water, LANGMUIR, 17(21), 2001, pp. 6506-6509
Authors:
Saloniemi, H
Kemell, M
Ritala, M
Leskela, M
Citation: H. Saloniemi et al., Electrochemical quartz crystal microbalance study on cyclic electrodeposition of PbS thin-films, THIN SOL FI, 386(1), 2001, pp. 32-40
Authors:
Kukli, K
Forsgren, K
Aarik, J
Uustare, T
Aidla, A
Niskanen, A
Ritala, M
Leskela, M
Harsta, A
Citation: K. Kukli et al., Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J CRYST GR, 231(1-2), 2001, pp. 262-272
Authors:
Stromme, M
Niklasson, GA
Ritala, M
Leskela, M
Kukli, K
Citation: M. Stromme et al., (Ta1-xNbx)(2)O-5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics, J APPL PHYS, 90(9), 2001, pp. 4532-4542
Authors:
Kukli, K
Ritala, M
Leskela, M
Citation: K. Kukli et al., Development of dielectric properties of niobium oxide, tantalum oxide, andaluminum oxide based nanolayered materials, J ELCHEM SO, 148(2), 2001, pp. F35-F41
Authors:
Kemell, M
Saloniemi, H
Ritala, M
Leskela, M
Citation: M. Kemell et al., Electrochemical quartz crystal microbalance study of the electrodepositionmechanisms of CuInSe2 thin films, J ELCHEM SO, 148(2), 2001, pp. C110-C118
Authors:
Kukli, K
Forsgren, K
Ritala, M
Leskela, M
Aarik, J
Harsta, A
Citation: K. Kukli et al., Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor, J ELCHEM SO, 148(12), 2001, pp. F227-F232
Authors:
Alen, P
Juppo, M
Ritala, M
Sajavaara, T
Keinonen, J
Leskela, M
Citation: P. Alen et al., Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent, J ELCHEM SO, 148(10), 2001, pp. G566-G571
Authors:
Saloniemi, H
Kemell, M
Ritala, M
Leskela, M
Citation: H. Saloniemi et al., Electrochemical quartz crystal microbalance and cyclic voltammetry studieson PbSe electrodeposition mechanisms, J MAT CHEM, 10(2), 2000, pp. 519-525
Authors:
Kukli, K
Ritala, M
Leskela, M
Citation: K. Kukli et al., Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)(3)](4) and H2O, CHEM VAPOR, 6(6), 2000, pp. 297-302
Authors:
Kukli, K
Ritala, M
Schuisky, M
Leskela, M
Sajavaara, T
Keinonen, J
Uustare, T
Harsta, A
Citation: K. Kukli et al., Atomic layer deposition of titanium oxide from TiI4 and H2O2, CHEM VAPOR, 6(6), 2000, pp. 303-310
Authors:
Schuisky, M
Kukli, K
Ritala, M
Harsta, A
Leskela, M
Citation: M. Schuisky et al., Atomic layer CVD in the Bi-Ti-O system, CHEM VAPOR, 6(3), 2000, pp. 139-145
Authors:
Kukli, K
Ritala, M
Leskela, M
Citation: K. Kukli et al., Atomic layer deposition and chemical vapor deposition of tantalum oxide bysuccessive and simultaneous pulsing of tantalum ethoxide and tantalum chloride, CHEM MATER, 12(7), 2000, pp. 1914-1920
Authors:
Juppo, M
Rahtu, A
Ritala, M
Leskela, M
Citation: M. Juppo et al., In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water, LANGMUIR, 16(8), 2000, pp. 4034-4039
Authors:
Kukli, K
Aidla, A
Aarik, J
Schuisky, M
Harsta, A
Ritala, M
Leskela, M
Citation: K. Kukli et al., Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2, LANGMUIR, 16(21), 2000, pp. 8122-8128
Authors:
Aarik, J
Aidla, A
Uustare, T
Ritala, M
Leskela, M
Citation: J. Aarik et al., Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process, APPL SURF S, 161(3-4), 2000, pp. 385-395
Authors:
Aarik, J
Aidla, A
Sammelselg, V
Uustare, T
Ritala, M
Leskela, M
Citation: J. Aarik et al., Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water, THIN SOL FI, 370(1-2), 2000, pp. 163-172
Authors:
Matero, R
Rahtu, A
Ritala, M
Leskela, M
Sajavaara, T
Citation: R. Matero et al., Effect of water dose on the atomic layer deposition rate of oxide thin films, THIN SOL FI, 368(1), 2000, pp. 1-7