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Results: 1-17 |
Results: 17
INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/
Authors: LEBEDEV AA SAVKINA NS TREGUBOVA AS SHCHEGLOV MP
Citation: Aa. Lebedev et al., INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/, Semiconductors, 31(9), 1997, pp. 926-928
6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY
Authors: LEBEDEV AA SAVKINA NS STRELCHUK AM TREGUBOVA AS SCHEGLOV MP
Citation: Aa. Lebedev et al., 6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 168-170
SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES
Authors: SYRKIN AL BLUET JM BASTIDE G BRETAGNON T LEBEDEV AA RASTEGAEVA MG SAVKINA NS CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 236-239
6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY
Authors: LEBEDEV AA MALTSEV AA POLETAEV NK RASTEGAEVA MG SAVKINA NS STRELCHUK AM CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY, Semiconductors, 30(10), 1996, pp. 944-945
EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES
Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES
Authors: LEBEDEV AA ANDREEV AN MALTSEV AA RASTEGAEVA WG SAVKINA NS CHELNOKOV VE
Citation: Aa. Lebedev et al., FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES, Semiconductors, 29(9), 1995, pp. 850-853
6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE
Authors: LEBEDEV AA ANIKIN MM KUZNETSOV AN RASTEGAEVA MG SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE, Semiconductors, 29(7), 1995, pp. 636-638
STUDY OF SIC-6H DINISTOR STRUCTURES
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., STUDY OF SIC-6H DINISTOR STRUCTURES, Semiconductors, 29(6), 1995, pp. 561-565
HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V
Authors: ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
HIGH-TEMPERATURE 6H-SIC DINISTOR
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE 6H-SIC DINISTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 194-197
FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H
Authors: ANDREEV AN LEBEDEV AA ZELENIN VV MALTSEV AA PASTEGAEVA MG SAVKINA NS SOKOLOVA TV CHELNOKOV VE
Citation: An. Andreev et al., FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H, Pis'ma v Zurnal tehniceskoj fiziki, 21(4), 1995, pp. 60-64
CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE
Authors: STRELCHUK AM ANIKIN MM ANDREEV AN ZELENIN VV LEBEDEV AA RASTEGAEVA MG SAVKINA NS SYRKIN AP CHELNOKOV VE SHESTOPALOVA LN
Citation: Am. Strelchuk et al., CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE, Zurnal tehniceskoj fiziki, 65(8), 1995, pp. 98-103
DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM
Authors: ANDREEV AN IVANOV PA STRELCHUK AM SAVKINA NS CHELNOKOV VE SHAPOSHNIKOV IR
Citation: An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD
Authors: ANIKIN MM KUZNETSOV NI LEBEDEV AA SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD, Semiconductors, 28(3), 1994, pp. 278-280
ELECTROLUMINESCENCE OF ALUMINUM-DOPED 6H-SIC P-N STRUCTURES
Authors: LEBEDEV AA POLETAEV NK RASTEGAEVA MG SAVKINA NS
Citation: Aa. Lebedev et al., ELECTROLUMINESCENCE OF ALUMINUM-DOPED 6H-SIC P-N STRUCTURES, Semiconductors, 28(10), 1994, pp. 981-984
SIC FIELD TRANSISTOR WITH LOW-THRESHOLD P RESSURE
Authors: ANIKIN MM LEBEDEV AA RASSTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., SIC FIELD TRANSISTOR WITH LOW-THRESHOLD P RESSURE, Pis'ma v Zurnal tehniceskoj fiziki, 20(10), 1994, pp. 16-19
EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH
Authors: ANIKIN MM IVANOV PA RASTEGAEV VP SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH, Semiconductors, 27(1), 1993, pp. 53-56
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