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Results: 1-23 |
Results: 23
DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/
Authors: ZHURAVLEV KS GILINSKII AM SHAMIRZAEV TS PREOBRAZHENSKII VV SEMYAGIN BR PUTYATO MA CHIPKIN SS
Citation: Ks. Zhuravlev et al., DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/, Physics of the solid state, 40(9), 1998, pp. 1577-1581
INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C
Authors: BERT NA SUVOROVA AA CHALDYSHEV VV MUSIKHIN YG PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR WERNER R
Citation: Na. Bert et al., INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 683-688
EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
Authors: CHALDYSHEV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR BERT NA KUNITSYN AE MUSIKHIN YG TRETYAKOV VV WERNER P
Citation: Vv. Chaldyshev et al., ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1036-1039
ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS
Authors: BRUNKOV PN CHALDYSHEV VV BERT NA SUVOROVA AA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brunkov et al., ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1044-1047
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: FALEEV NN CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Nn. Faleev et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 32(1), 1998, pp. 19-25
BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS
Authors: BROUNKOV PN CHALDYSHEV VV SUVOROVA AA BERT NA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brounkov et al., BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 73(19), 1998, pp. 2796-2798
A SUITE OF EXPERIMENTAL CONDITIONS FOR PHOTOLUMINESCENCE MONITORING OF A HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURE
Authors: ZHURAVLEV KS SHAMIRZAEV TS PREOBRAZHENSKII VV SEMYAGIN BR KOSTYUCHENKO VR
Citation: Ks. Zhuravlev et al., A SUITE OF EXPERIMENTAL CONDITIONS FOR PHOTOLUMINESCENCE MONITORING OF A HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURE, Technical physics, 42(12), 1997, pp. 1395-1399
OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS
Authors: CHALDYSHEV VV BERT NA PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 238(1), 1997, pp. 148-151
2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV FALEEV NN KUNITSYN AE LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV
Citation: Na. Bert et al., 2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 12(1), 1997, pp. 51-54
INELASTIC RESONANCE TUNNELING OF ELECTRONS THROUGH THE TRIPLE BARRIERGAAS ALXGA1-XAS HETEROSTRUCTURE UNDER INFRARED ELECTROMAGNETIC-FIELD EXCITATION/
Authors: ZAKHAROV IM KOVCHAVTZEV AP KURYSHEV GL PREOBRAGENSKY VV SEMYAGIN BR
Citation: Im. Zakharov et al., INELASTIC RESONANCE TUNNELING OF ELECTRONS THROUGH THE TRIPLE BARRIERGAAS ALXGA1-XAS HETEROSTRUCTURE UNDER INFRARED ELECTROMAGNETIC-FIELD EXCITATION/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 53-61
SPLITTING OF TRANSVERSE OPTICAL PHONON MODES LOCALIZED IN GAAS QUANTUM WIRES ON A FACETED (311)A SURFACE
Authors: VOLODIN VA EFREMOV MD PRINTS VY PREOBRAZHENSKII PV SEMYAGIN BR GOVOROV AO
Citation: Va. Volodin et al., SPLITTING OF TRANSVERSE OPTICAL PHONON MODES LOCALIZED IN GAAS QUANTUM WIRES ON A FACETED (311)A SURFACE, JETP letters, 66(1), 1997, pp. 47-51
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
MAGNET-DEPENDENT MICROWAVE-ABSORPTION CAU SED BY SUPERCONDUCTING IN-GA-CLUSTERS IN GAAS GROWN BY MOLECULAR-RAY EPITAXY
Authors: VEINGER AI KOZYREV SV CHALDYSHEV VV VILISOVA MD LAVRENTEVA LG IVONIN IV LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Ai. Veinger et al., MAGNET-DEPENDENT MICROWAVE-ABSORPTION CAU SED BY SUPERCONDUCTING IN-GA-CLUSTERS IN GAAS GROWN BY MOLECULAR-RAY EPITAXY, Fizika tverdogo tela, 38(10), 1996, pp. 2897-2904
LOCALIZED OPTICAL VIBRATIONAL-MODES IN GASB ALSB SUPERLATTICES/
Authors: MILEKHIN AG PUSEP YA YANOVSKII YA PREOBRAZHENSKII VV SEMYAGIN BR LUBYSHEV DI
Citation: Ag. Milekhin et al., LOCALIZED OPTICAL VIBRATIONAL-MODES IN GASB ALSB SUPERLATTICES/, JETP letters, 64(5), 1996, pp. 393-397
OBSERVATION OF LO-PHONON LOCALIZATION IN GAAS QUANTUM WIRES ON FACETED (311)A SURFACES
Authors: VOLODIN VA EFREMOV MD PRINTS VY PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Va. Volodin et al., OBSERVATION OF LO-PHONON LOCALIZATION IN GAAS QUANTUM WIRES ON FACETED (311)A SURFACES, JETP letters, 63(12), 1996, pp. 994-999
SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Na. Bert et al., SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 29(12), 1995, pp. 1170-1171
ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/
Authors: PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P MILEKHIN AG PREOBRAZHENSKII VV SEMYAGIN BR MARAHOVKA II
Citation: Ya. Pusep et al., ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 180-183
SPECTROSCOPY OF THE OPTICAL VIBRATIONAL-MODES IN GAAS ALXGA1-XAS HETEROSTRUCTURES WITH MONOLAYER-WIDE ALXGA1-XAS BARRIERS/
Authors: PUSEP YA DASILVA SW GALZERANI JC MILEKHIN AG PREOBRAZHENSKII VV SEMYAGIN BR MARAHOVKA II
Citation: Ya. Pusep et al., SPECTROSCOPY OF THE OPTICAL VIBRATIONAL-MODES IN GAAS ALXGA1-XAS HETEROSTRUCTURES WITH MONOLAYER-WIDE ALXGA1-XAS BARRIERS/, Physical review. B, Condensed matter, 52(4), 1995, pp. 2610-2618
ELECTRONIC-PROPERTIES OF GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT GROWTH TEMPERATURES FROM 360-DEGREES-C TO 640-DEGREES-C
Authors: ZHURAVLEV KS PRINTS VY LUBYSHEV DI SEMYAGIN BR MIGAL VP GILINSKII AM
Citation: Ks. Zhuravlev et al., ELECTRONIC-PROPERTIES OF GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT GROWTH TEMPERATURES FROM 360-DEGREES-C TO 640-DEGREES-C, Semiconductors, 28(11), 1994, pp. 1067-1072
HIGH-TEMPERATURE ANISOTROPY OF THE CONDUCTIVITY OF SUPERLATTICES OF GAAS QUANTUM WIRES GROWN ON FACETED 311A SURFACES
Authors: PRINTS VY PANAEV IA PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Vy. Prints et al., HIGH-TEMPERATURE ANISOTROPY OF THE CONDUCTIVITY OF SUPERLATTICES OF GAAS QUANTUM WIRES GROWN ON FACETED 311A SURFACES, JETP letters, 60(3), 1994, pp. 217-220
LOCALIZATION OF TRANSVERSE OPTICAL PHONONS OF GAAS IN GAAS ALXGA1-XASPERIODIC STRUCTURES WITH PAIRED QUANTUM-WELLS
Authors: MILEKHIN AG PUSEP YA PREOBRAZHENSKII VV SEMYAGIN BR LUBYSHEV DI
Citation: Ag. Milekhin et al., LOCALIZATION OF TRANSVERSE OPTICAL PHONONS OF GAAS IN GAAS ALXGA1-XASPERIODIC STRUCTURES WITH PAIRED QUANTUM-WELLS, JETP letters, 59(7), 1994, pp. 493-496
LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY
Authors: BERT NA VEINGER AI VILISOVA MD GOLOSHCHAPOV SI IVONIN IV KOZYREV SV KUNITSYN AE LAVRENTYEVA LG LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV CHALDYSHEV VV YAKUBENYA MP
Citation: Na. Bert et al., LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY, Fizika tverdogo tela, 35(10), 1993, pp. 2609-2625
Risultati: 1-23 |