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Results: 1-25/29
Authors:
GIUST GK
SIGMON TW
CAREY PG
WEISS B
DAVIS GA
Citation: Gk. Giust et al., LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED FROM LASER-PROCESSED SPUTTERED-SILICON FILMS, IEEE electron device letters, 19(9), 1998, pp. 343-344
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, HIGH-PERFORMANCE THIN-FILM TRANSISTORS FABRICATED USING EXCIMER-LASERPROCESSING AND GRAIN ENGINEERING, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 925-932
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, SELF-ALIGNED ALUMINUM TOP-GATE POLYSILICON THIN-FILM TRANSISTORS FABRICATED USING LASER RECRYSTALLIZATION AND GAS-IMMERSION LASER DOPING, IEEE electron device letters, 18(8), 1997, pp. 394-396
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, PERFORMANCE IMPROVEMENT OBTAINED FOR THIN-FILM TRANSISTORS FABRICATEDIN PREPATTERNED LASER-RECRYSTALLIZED POLYSILICON, IEEE electron device letters, 18(6), 1997, pp. 296-298
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, LASER RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON IN RECESSED STRUCTURES, Journal of electronic materials, 26(8), 1997, pp. 13-16
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, COMPARISON OF EXCIMER-LASER RECRYSTALLIZED PREPATTERNED UNPATTERNED SILICON FILMS ON SIO2, Journal of applied physics, 81(3), 1997, pp. 1204-1211
Authors:
KUO CH
HSIEH IC
SCHRODER DK
MARACAS GN
CHEN S
SIGMON TW
Citation: Ch. Kuo et al., EX-SITU ELLIPSOMETRY CHARACTERIZATION OF EXCIMER-LASER ANNEALED AMORPHOUS-SILICON THIN-FILMS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(3), 1997, pp. 359-361
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, MICROSTRUCTURAL CHARACTERIZATION OF SOLID-PHASE CRYSTALLIZED AMORPHOUS-SILICON FILMS RECRYSTALLIZED USING AN EXCIMER-LASER, Applied physics letters, 70(6), 1997, pp. 767-769
Authors:
SMITH PM
CAREY PG
SIGMON TW
Citation: Pm. Smith et al., EXCIMER-LASER CRYSTALLIZATION AND DOPING OF SILICON FILMS ON PLASTIC SUBSTRATES, Applied physics letters, 70(3), 1997, pp. 342-344
Authors:
GIUST GK
SIGMON TW
Citation: Gk. Giust et Tw. Sigmon, NEW RIPPLE PATTERNS OBSERVED IN EXCIMER-LASER IRRADIATED SIO2 POLYCRYSTALLINE SILICON SIO2 STRUCTURES, Applied physics letters, 70(26), 1997, pp. 3552-3554
Authors:
DENG C
SIGMON TW
MCCARTHY JM
Citation: C. Deng et al., EXAMINATION OF GE SI AND GESI/SI SURFACE NANOSTRUCTURES USING TRANSMISSION ELECTRON-MICROSCOPY AND FOCUSED ION-BEAM-ASSISTED PROCESSING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1650-1654
Authors:
DENG C
SIGMON TW
GIUST GK
WU JC
WYBOURNE MN
Citation: C. Deng et al., NOVEL SCHEME TO FABRICATE SIGE NANOWIRES USING PULSED ULTRAVIOLET-LASER INDUCED EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1860-1863
Authors:
BARBERO CJ
DENG C
SIGMON TW
RUSSELL SW
ALFORD TL
Citation: Cj. Barbero et al., THE FABRICATION OF NICKEL AND CHROMIUM SILICIDE USING AN XECL EXCIMER-LASER, Journal of crystal growth, 165(1-2), 1996, pp. 57-60
Authors:
CAO M
TALWAR S
KRAMER KJ
SIGMON TW
SARASWAT KC
Citation: M. Cao et al., A HIGH-PERFORMANCE POLYSILICON THIN-FILM-TRANSISTOR USING XECL EXCIMER-LASER CRYSTALLIZATION OF PRE-PATTERNED AMORPHOUS SI FILMS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 561-567
Authors:
DENG C
SIGMON TW
WU JC
WYBOURNE MN
Citation: C. Deng et al., SURFACE EVOLUTION IN A PULSED-LASER INDUCED EPITAXY PROCESS OF SUBMICRON SIGE WIRES, Journal of the Electrochemical Society, 143(8), 1996, pp. 2678-2680
Authors:
VERMA G
TALWAR S
SIGMON TW
Citation: G. Verma et al., FORMATION AND CONTROL OF PHOSPHORUS BURIED LAYERS IN SILICON USING A PULSED XECL EXCIMER-LASER, Applied physics letters, 69(3), 1996, pp. 319-321
Authors:
DENG C
SIGMON TW
WU JC
WYBOUME MN
RACK J
Citation: C. Deng et al., FORMATION AND CHARACTERIZATION OF ULTRASMALL DIMENSION GESI WIRE STRUCTURE BY USING PULSED LASER-INDUCED EPITAXY, Applied physics letters, 68(26), 1996, pp. 3734-3736
Authors:
VERMA G
SLAOUI A
TALWAR S
SIGMON TW
Citation: G. Verma et al., FORMATION AND CONTROL OF BORON BURIED LAYERS IN SILICON USING AN EXCIMER-LASER, IEEE electron device letters, 16(1), 1995, pp. 14-16
Authors:
MAYER JW
SIGMON TW
Citation: Jw. Mayer et Tw. Sigmon, LOW-POWER ELECTRONICS AND PULSED-LASER PROCESSING, Materials chemistry and physics, 42(2), 1995, pp. 129-133
Authors:
SLAOUI A
DENG C
TALWAR S
KRAMER KJ
SIGMON TW
STOQUERT JP
PREVOT B
Citation: A. Slaoui et al., FORMATION OF POLY-SI1-XGEX USING EXCIMER-LASER PROCESSING, Applied surface science, 86(1-4), 1995, pp. 346-352
Authors:
AHMED S
BARBERO CJ
SIGMON TW
ERICKSON JW
Citation: S. Ahmed et al., EMPIRICAL DEPTH PROFILE SIMULATOR FOR ION-IMPLANTATION IN 6H-ALPHA-SIC, Journal of applied physics, 77(12), 1995, pp. 6194-6200
Authors:
AHMED S
BARBERO CJ
SIGMON TW
Citation: S. Ahmed et al., ACTIVATION OF ION-IMPLANTED DOPANTS IN ALPHA-SIC, Applied physics letters, 66(6), 1995, pp. 712-714
Authors:
ISHIDA E
SIGMON TW
WEINER KH
FROST MR
Citation: E. Ishida et al., ULTRA-SHALLOW BOX-LIKE PROFILES FABRICATED BY PULSED ULTRAVIOLET-LASER DOPING PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 399-404
Authors:
SLAOUI A
DENG C
TALWAR S
KRAMER J
SIGMON TW
Citation: A. Slaoui et al., FABRICATION AND DOPING OF POLY-SIGE USING EXCIMER-LASER PROCESSING, Applied physics. A, Solids and surfaces, 59(2), 1994, pp. 203-207
Authors:
BROOKS MB
SIGMON TW
Citation: Mb. Brooks et Tw. Sigmon, A COMPARATIVE-STUDY OF N+ OHMIC CONTACT RESISTANCE FOR PDINGE AND NIGEAU METALLIZATIONS ON GAAS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1469-1471