Citation: Ly. Sheng et al., A LOW-POWER CMOS COMPATIBLE INTEGRATED GAS SENSOR USING MASKLESS TIN OXIDE SPUTTERING, Sensors and actuators. B, Chemical, 49(1-2), 1998, pp. 81-87
Authors:
TANG Z
FUNG SKH
WONG DTW
CHAN PCH
SIN JKO
CHEUNG PW
Citation: Z. Tang et al., AN INTEGRATED GAS SENSOR-BASED ON TIN OXIDE THIN-FILM AND IMPROVED MICRO-HOTPLATE, Sensors and actuators. B, Chemical, 46(3), 1998, pp. 174-179
Citation: Sd. Zhang et Jko. Sin, A NOVEL SELF-ALIGNED BIDIRECTIONAL MIM DIODE WITH TRANSPARENT JUNCTIONS FOR AM-LCD, IEEE electron device letters, 19(6), 1998, pp. 192-194
Citation: Qa. Huang et al., AN INTERPRETATION OF SIO2-INDUCED EMISSION INSTABILITY IN SILICON FIELD EMITTER, Applied surface science, 136(1-2), 1998, pp. 36-40
Citation: Wwt. Chan et al., A NOVEL CROSSTALK ISOLATION STRUCTURE FOR BULK CMOS POWER ICS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1580-1586
Authors:
WANG BP
SIN JKO
CAI J
POON VMC
WANG C
TANG YM
TONG LS
Citation: Bp. Wang et al., NUMERICAL AND EXPERIMENTAL CHARACTERIZATION OF SINGLE-GATE AND DOUBLE-GATE RACE-TRACK-SHAPED FIELD EMITTER STRUCTURES, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 554-559
Citation: A. Kumar et al., KINK-FREE POLYCRYSTALLINE SILICON DOUBLE-GATE ELEVATED-CHANNEL THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2514-2520
Citation: Cc. Zhu et al., TECHNIQUE FOR FABRICATING SELF-ALIGNED GATES ONTO SILICON FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1682-1684
Citation: C. Wang et al., NUMERICAL MODELING OF THE DISK-EDGE FIELD EMITTER TRIODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 394-397
Citation: Zn. Tang et al., THEORY AND EXPERIMENTS ON R.F. SPUTTERED TIN OXIDE THIN-FILMS FOR GAS-SENSING APPLICATIONS, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 161-164
Citation: Qa. Huang et al., A FIELD-ENHANCED GENERATION MODEL FOR FIELD-EMISSION FROM P-TYPE SILICON, IEEE electron device letters, 18(12), 1997, pp. 616-618
Citation: Qa. Huang et al., FIELD-EMISSION FROM SILICON INCLUDING CONTINUUM ENERGY AND SURFACE QUANTIZATION, Applied surface science, 119(3-4), 1997, pp. 229-236
Citation: Xb. Chen et al., AN ANALYTICAL MODEL FOR ELECTRIC-FIELD DISTRIBUTION OF POSITIVELY BEVELED ABRUPT PN JUNCTIONS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 869-873
Citation: Bp. Wang et al., ELECTROSTATIC ANALYSIS OF FIELD-EMISSION TRIODE WITH VOLCANO-TYPE GATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1938-1941
Citation: Pg. Han et al., STUDY OF LUMINESCENT POROUS POLYCRYSTALLINE SILICON THIN-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 824-826
Citation: Skh. Fung et al., THERMAL-ANALYSIS AND DESIGN OF A MICRO-HOTPLATE FOR INTEGRATED GAS-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 54(1-3), 1996, pp. 482-487
Citation: Jko. Sin et S. Mukherjee, ANALYSIS AND CHARACTERIZATION OF THE SEGMENTED ANODE LIGBT, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1300-1306