AAAAAA
Results: 26-50/71
Authors:
YANKOV RA
KASCHNY JR
FICHTNER PFP
MUCKLICH A
KREISSIG U
SKORUPA W
Citation: Ra. Yankov et al., IMPURITY GETTERING EFFECTS IN SEPARATION-BY-IMPLANTED-OXYGEN (SIMOX) WAFERS - WHAT GETTERS WHAT, WHERE AND HOW, Microelectronic engineering, 36(1-4), 1997, pp. 129-132
Authors:
HENKEL T
HEERA V
KOGLER R
SKORUPA W
SEIBT M
Citation: T. Henkel et al., KINETICS OF ION-BEAM-INDUCED INTERFACIAL AMORPHIZATION IN SILICON, Journal of applied physics, 82(11), 1997, pp. 5360-5373
Authors:
SCHROER E
HOPFE S
TONG QY
GOSELE U
SKORUPA W
Citation: E. Schroer et al., GROWTH OF BURIED OXIDE LAYERS OF SILICON-ON-INSULATOR STRUCTURES BY THERMAL-OXIDATION OF THE TOP SILICON LAYER, Journal of the Electrochemical Society, 144(6), 1997, pp. 2205-2210
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
CALVOBARRIO L
MORANTE JR
ESTEVE J
ACERO MC
SKORUPA W
KOGLER R
Citation: C. Serre et al., SYNTHESIS OF SIC MICROSTRUCTURES IN SI TECHNOLOGY BY HIGH-DOSE CARBONIMPLANTATION - ETCH-STOP PROPERTIES, Journal of the Electrochemical Society, 144(6), 1997, pp. 2211-2215
Authors:
VONBORANY J
GROTZSCHEL R
HEINIG KH
MARKWITZ A
MATZ W
SCHMIDT B
SKORUPA W
Citation: J. Vonborany et al., MULTIMODAL IMPURITY REDISTRIBUTION AND NANOCLUSTER FORMATION IN GE IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 71(22), 1997, pp. 3215-3217
Authors:
REBOHLE L
VONBORANY J
YANKOV RA
SKORUPA W
TYSCHENKO IE
FROB H
LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
Authors:
FICHTNER PFP
KASCHNY JR
YANKOV RA
MUCKLICH A
KREISSIG U
SKORUPA W
Citation: Pfp. Fichtner et al., OVERPRESSURIZED BUBBLES VERSUS VOIDS FORMED IN HELIUM IMPLANTED AND ANNEALED SILICON, Applied physics letters, 70(6), 1997, pp. 732-734
Authors:
HEERA V
PROKERT F
SCHELL N
SEIFARTH H
FUKAREK W
VOELSKOW M
SKORUPA W
Citation: V. Heera et al., DENSITY AND STRUCTURAL-CHANGES IN SIC AFTER AMORPHIZATION AND ANNEALING, Applied physics letters, 70(26), 1997, pp. 3531-3533
Authors:
WERNER P
EICHLER S
MARIANI G
KOGLER R
SKORUPA W
Citation: P. Werner et al., INVESTIGATION OF CXSI DEFECTS IN C-IMPLANTED SILICON BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 70(2), 1997, pp. 252-254
Authors:
PANKNIN D
WIESER E
SKORUPA W
HENRION W
LANGE H
Citation: D. Panknin et al., BURIED (FE1-XCOX)SI-2 LAYERS WITH VARIABLE BAND-GAP FORMED BY ION BEAM SYNTHESIS, Applied physics A: Materials science & processing, 62(2), 1996, pp. 155-162
Authors:
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: A. Romanorodriguez et al., DETAILED ANALYSIS OF BETA-SIC FORMATION BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 282-285
Authors:
PEREZRODRIGUEZ A
PACAUD Y
CALVOBARRIO L
SERRE C
SKORUPA W
MORANTE JR
Citation: A. Perezrodriguez et al., ANALYSIS OF ION-BEAM-INDUCED DAMAGE AND AMORPHIZATION OF 6H-SIC BY RAMAN-SCATTERING, Journal of electronic materials, 25(3), 1996, pp. 541-547
Authors:
SKORUPA W
YANKOV RA
Citation: W. Skorupa et Ra. Yankov, CARBON-MEDIATED EFFECTS IN SILICON AND IN SILICON-RELATED MATERIALS, Materials chemistry and physics, 44(2), 1996, pp. 101-143
Authors:
ZORBA TT
MITSAS CL
SIAPKAS ID
TERZAKIS GZ
SIAPKAS DI
PACAUD Y
SKORUPA W
Citation: Tt. Zorba et al., AN INFRARED STUDY OF GE+ IMPLANTED SIC, Applied surface science, 102, 1996, pp. 120-124
Authors:
YANKOV RA
HATZOPOULOS N
SKORUPA W
DANILIN AB
Citation: Ra. Yankov et al., PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 60-63
Authors:
SKORUPA W
YANKOV RA
REBOHLE L
FROB H
BOHME T
LEO K
TYSCHENKO IE
KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
Authors:
SKORUPA W
HEERA V
PACAUD Y
WEISHART H
Citation: W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
MORANTE JR
CALDERER J
REUTHER H
SKORUPA W
Citation: A. Perezrodriguez et al., ION-BEAM SYNTHESIS AND RECRYSTALLIZATION OF AMORPHOUS SIGE SIC STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 151-155
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
GONZALEZVARONA O
MORANTE JR
KOGLER R
SKORUPA W
RODRIGUEZ A
Citation: A. Perezrodriguez et al., HIGH-TEMPERATURE HIGH-DOSE C ION-IMPLANTATION IN EPITAXIAL SIGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 173-176
Authors:
PACAUD Y
STOEMENOS J
BRAUER G
YANKOV RA
HEERA V
VOELSKOW M
KOGLER R
SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
Authors:
PACAUD Y
SKORUPA W
STOEMENOS J
Citation: Y. Pacaud et al., MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 181-185
Authors:
BISCHOFF L
HEINIG KH
TEICHERT J
SKORUPA W
Citation: L. Bischoff et al., SUBMICRON COSI2 STRUCTURES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION AND LOCAL FLASH LAMP MELTING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 201-205
Authors:
PACAUD Y
SKORUPA W
PEREZRODRIGUEZ A
BRAUER G
STOEMENOS J
BARKLIE RC
Citation: Y. Pacaud et al., INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 321-324
Authors:
PEREZRODRIGUEZ A
KOGLER R
CALVOBARRIO L
SERRE C
ROMANORODRIGUEZ A
HEERA V
SKORUPA W
MORANTE JR
Citation: A. Perezrodriguez et al., ION-BEAM-ASSISTED RECRYSTALLIZATION OF SIC SI STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 334-337
Authors:
WEISHART H
STEFFEN HJ
MATZ W
VOELSKOW M
SKORUPA W
Citation: H. Weishart et al., ION-BEAM SYNTHESIS BY TUNGSTEN-IMPLANTATION INTO 6H-SILICON CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 338-341