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Results: 1-25 |

Results: 25

NEGATIVE-U CENTERS IN 4H SILICON-CARBIDE

Authors: HEMMINGSSON CG SON NT ELLISON A ZHANG J JANZEN E

Citation: Cg. Hemmingsson et al., NEGATIVE-U CENTERS IN 4H SILICON-CARBIDE, Physical review. B, Condensed matter, 58(16), 1998, pp. 10119-10122

CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC

Authors: HEMMINGSSON C SON NT KORDINA O JANZEN E LINDSTROM JL

Citation: C. Hemmingsson et al., CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 704-708

POINT PREVALENCE OF SECRETORY OTITIS-MEDIA IN CHILDREN IN SOUTHERN VIETNAM

Authors: SON DH TRI L TIEN VM PHUONG TK BALLE V SON NT MAI TTT TOS M

Citation: Dh. Son et al., POINT PREVALENCE OF SECRETORY OTITIS-MEDIA IN CHILDREN IN SOUTHERN VIETNAM, The Annals of otology, rhinology & laryngology, 107(5), 1998, pp. 406-410

DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC

Authors: SON NT SORMAN E SINGH M CHEN WM HALLIN C KORDINA O MONEMAR B LINDSTROM JL JANZEN E

Citation: Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380

OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN 3C SIC EPITAXIAL LAYERS

Authors: SON NT SORMAN E CHEN WM HALLIN C KORDINA O MONEMAR B JANZEN E

Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN 3C SIC EPITAXIAL LAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1381-1384

CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC

Authors: HEMMINGSSON C SON NT KORDINA O JANZEN E LINDSTROM JL SAVAGE S NORDELL N

Citation: C. Hemmingsson et al., CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 336-339

GROWTH OF SIC BY HOT-WALL CVD AND HTCVD

Authors: KORDINA O HALLIN C HENRY A BERGMAN JP IVANOV I ELLISON A SON NT JANZEN E

Citation: O. Kordina et al., GROWTH OF SIC BY HOT-WALL CVD AND HTCVD, Physica status solidi. b, Basic research, 202(1), 1997, pp. 321-334

OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS

Authors: SON NT SORMAN E CHEN WM HALLIN C KORDINA O MONEMAR B JANZEN E LINDSTROM JL

Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS, Physical review. B, Condensed matter, 55(5), 1997, pp. 2863-2866

EFFECTIVE MASSES IN SIC DETERMINED BY CYCLOTRON-RESONANCE EXPERIMENTS

Authors: CHEN WM SON NT JANZEN E HOFMANN DM MEYER BK

Citation: Wm. Chen et al., EFFECTIVE MASSES IN SIC DETERMINED BY CYCLOTRON-RESONANCE EXPERIMENTS, Physica status solidi. a, Applied research, 162(1), 1997, pp. 79-93

DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS

Authors: HEMMINGSSON C SON NT KORDINA O BERGMAN JP JANZEN E LINDSTROM JL SAVAGE S NORDELL N

Citation: C. Hemmingsson et al., DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS, Journal of applied physics, 81(9), 1997, pp. 6155-6159

EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC

Authors: SON NT SORMAN E CHEN WM BERGMAN JP HALLIN C KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMANN DM VOLM D MEYER BK

Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932

SYNTHESIS AND APPLICATION OF INSECT ATTRACTANTS IN VIETNAM

Authors: HAO NC GIANG NCTH KHOA NC SON NT

Citation: Nc. Hao et al., SYNTHESIS AND APPLICATION OF INSECT ATTRACTANTS IN VIETNAM, Resources, conservation and recycling, 18(1-4), 1996, pp. 59-68

DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC

Authors: VOLM D MEYER BK HOFMANN DM CHEN WM SON NT PERSSON C LINDEFELT U KORDINA O SORMAN E KONSTANTINOV AO MONEMAR B JANZEN E

Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412

DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC

Authors: SON NT SORMAN E CHEN WM SINGH M HALLIN C KORDINA O MONEMAR B JANZEN E LINDSTROM JL

Citation: Nt. Son et al., DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC, Journal of applied physics, 79(7), 1996, pp. 3784-3786

SHALLOW EXCITED-STATES OF DEEP LUMINESCENT CENTERS IN SILICON

Authors: SINGH M CHEN WM SON NT MONEMAR B JANZEN E

Citation: M. Singh et al., SHALLOW EXCITED-STATES OF DEEP LUMINESCENT CENTERS IN SILICON, Solid state communications, 93(5), 1995, pp. 415-418

IMPORTANT ROLE OF SHALLOW IMPURITIES IN CARRIER RECOMBINATION IN SIC

Authors: CHEN WM SON NT SORMAN E KORDINA O BERGMAN JP HENRY A MONEMAR B JANZEN E

Citation: Wm. Chen et al., IMPORTANT ROLE OF SHALLOW IMPURITIES IN CARRIER RECOMBINATION IN SIC, Solid state communications, 93(5), 1995, pp. 470-470

ELECTRON EFFECTIVE MASSES IN 4H SIC

Authors: SON NT CHEN WM KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMAN DM VOLM D DRECHSLER M MEYER BK

Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES IN 4H SIC, Applied physics letters, 66(9), 1995, pp. 1074-1076

EFFICIENT EXCITATION TRANSFER IN SILICON STUDIED BY FOURIER-TRANSFORMPHOTOLUMINESCENCE EXCITATION SPECTROSCOPY

Authors: SINGH M CHEN WM SON NT MONEMAR B

Citation: M. Singh et al., EFFICIENT EXCITATION TRANSFER IN SILICON STUDIED BY FOURIER-TRANSFORMPHOTOLUMINESCENCE EXCITATION SPECTROSCOPY, Applied physics letters, 66(12), 1995, pp. 1498-1500

HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION

Authors: KORDINA O HENRY A BERGMAN JP SON NT CHEN WM HALLIN C JANZEN E

Citation: O. Kordina et al., HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(11), 1995, pp. 1373-1375

SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES

Authors: JANZEN E KORDINA O HENRY A CHEN WM SON NT MONEMAR B SORMAN E BERGMAN P HARRIS CI YAKIMOVA R TUOMINEN M KONSTANTINOV AO HALLIN C HEMMINGSON C

Citation: E. Janzen et al., SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES, Physica scripta. T, 54, 1994, pp. 283-290

ELECTRONIC-STRUCTURE OF A PHOTOLUMINESCENT CENTER IN SILVER-DOPED SILICON

Authors: SON NT SINGH M DALFORS J MONEMAR B JANZEN E

Citation: Nt. Son et al., ELECTRONIC-STRUCTURE OF A PHOTOLUMINESCENT CENTER IN SILVER-DOPED SILICON, Physical review. B, Condensed matter, 49(24), 1994, pp. 17428-17431

LIGAND ENDOR ON SUBSTITUTIONAL MANGANESE IN GAAS

Authors: VANGISBERGEN SJCHM EZHEVSKII AA SON NT GREGORKIEWICZ T AMMERLAAN CAJ

Citation: Sjchm. Vangisbergen et al., LIGAND ENDOR ON SUBSTITUTIONAL MANGANESE IN GAAS, Physical review. B, Condensed matter, 49(16), 1994, pp. 10999-11004

ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL-VAPOR-DEPOSITION LAYERS

Authors: SON NT KORDINA O KONSTANTINOV AO CHEN WM SORMAN E MONEMAR B JANZEN E

Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL-VAPOR-DEPOSITION LAYERS, Applied physics letters, 65(25), 1994, pp. 3209-3211

POSSIBLE LIFETIME-LIMITING DEFECT IN 6H SIC

Authors: SON NT SORMAN E CHEN WM KORDINA O MONEMAR B JANZEN E

Citation: Nt. Son et al., POSSIBLE LIFETIME-LIMITING DEFECT IN 6H SIC, Applied physics letters, 65(21), 1994, pp. 2687-2689

BLEU-DE-HUE - CHINESE PORCELAINS FOR THE VIETNAMESE COURT

Authors: CAN HT SON NT

Citation: Ht. Can et Nt. Son, BLEU-DE-HUE - CHINESE PORCELAINS FOR THE VIETNAMESE COURT, Arts of Asia, 23(3), 1993, pp. 107-120

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