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Results: 1-23 |
Results: 23
PHYSICAL MODEL AND RESULTS OF NUMERICAL-SIMULATION OF THE DEGRADATIONOF A SI SIO2 STRUCTURE AS A RESULT OF ANNEALING IN VACUUM/
Authors: GADIYAK GV STATHIS JH
Citation: Gv. Gadiyak et Jh. Stathis, PHYSICAL MODEL AND RESULTS OF NUMERICAL-SIMULATION OF THE DEGRADATIONOF A SI SIO2 STRUCTURE AS A RESULT OF ANNEALING IN VACUUM/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 966-969
INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES
Authors: UREN MJ NAYAR V BRUNSON KM ANTHONY CJ STATHIS JH CARTIER E
Citation: Mj. Uren et al., INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 145(2), 1998, pp. 683-689
CONTROL AND MODIFICATION OF NEMATIC LIQUID-CRYSTAL PRETILT ANGLES ON POLYIMIDES
Authors: LEE KW LIEN A STATHIS JH PAEK SH
Citation: Kw. Lee et al., CONTROL AND MODIFICATION OF NEMATIC LIQUID-CRYSTAL PRETILT ANGLES ON POLYIMIDES, JPN J A P 1, 36(6A), 1997, pp. 3591-3597
CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/
Authors: STATHIS JH
Citation: Jh. Stathis, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/, Journal of physics. Condensed matter, 9(15), 1997, pp. 3297-3298
POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/
Authors: UREN MJ BRUNSON KM STATHIS JH CARTIER E
Citation: Mj. Uren et al., POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 219-222
QUANTITATIVE MODEL OF THE THICKNESS DEPENDENCE OF BREAKDOWN IN ULTRA-THIN OXIDES
Authors: STATHIS JH
Citation: Jh. Stathis, QUANTITATIVE MODEL OF THE THICKNESS DEPENDENCE OF BREAKDOWN IN ULTRA-THIN OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 325-328
ON THE RELATIONSHIP BETWEEN STRESS-INDUCED LEAKAGE CURRENTS AND CATASTROPHIC BREAKDOWN IN ULTRA-THIN SIO2 BASED DIELECTRICS
Authors: BUCHANAN DA STATHIS JH CARTIER E DIMARIA DJ
Citation: Da. Buchanan et al., ON THE RELATIONSHIP BETWEEN STRESS-INDUCED LEAKAGE CURRENTS AND CATASTROPHIC BREAKDOWN IN ULTRA-THIN SIO2 BASED DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 329-332
ULTIMATE LIMIT FOR DEFECT GENERATION IN ULTRA-THIN SILICON DIOXIDE
Authors: DIMARIA DJ STATHIS JH
Citation: Dj. Dimaria et Jh. Stathis, ULTIMATE LIMIT FOR DEFECT GENERATION IN ULTRA-THIN SILICON DIOXIDE, Applied physics letters, 71(22), 1997, pp. 3230-3232
EXPLANATION FOR THE OXIDE THICKNESS DEPENDENCE OF BREAKDOWN CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
Authors: DIMARIA DJ STATHIS JH
Citation: Dj. Dimaria et Jh. Stathis, EXPLANATION FOR THE OXIDE THICKNESS DEPENDENCE OF BREAKDOWN CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Applied physics letters, 70(20), 1997, pp. 2708-2710
CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE
Authors: UREN MJ STATHIS JH CARTIER E
Citation: Mj. Uren et al., CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE, Journal of applied physics, 80(7), 1996, pp. 3915-3922
HOT-ELECTRON-INDUCED PASSIVATION OF SILICON DANGLING BONDS AT THE SI(111) SIO2 INTERFACE/
Authors: CARTIER E STATHIS JH
Citation: E. Cartier et Jh. Stathis, HOT-ELECTRON-INDUCED PASSIVATION OF SILICON DANGLING BONDS AT THE SI(111) SIO2 INTERFACE/, Applied physics letters, 69(1), 1996, pp. 103-105
ELECTRICALLY DETECTED MAGNETIC-RESONANCE STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SIO2
Authors: STATHIS JH
Citation: Jh. Stathis, ELECTRICALLY DETECTED MAGNETIC-RESONANCE STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SIO2, Applied physics letters, 68(12), 1996, pp. 1669-1671
ATOMIC HYDROGEN-INDUCED DEGRADATION OF THE SI SIO2 STRUCTURE/
Authors: CARTIER E STATHIS JH
Citation: E. Cartier et Jh. Stathis, ATOMIC HYDROGEN-INDUCED DEGRADATION OF THE SI SIO2 STRUCTURE/, Microelectronic engineering, 28(1-4), 1995, pp. 3-10
DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS/
Authors: STATHIS JH
Citation: Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS/, Microelectronic engineering, 28(1-4), 1995, pp. 19-21
ATOMIC HYDROGEN-INDUCED DEGRADATION OF THIN SIO2 GATE OXIDES
Authors: CARTIER E BUCHANAN DA STATHIS JH DIMARIA DJ
Citation: E. Cartier et al., ATOMIC HYDROGEN-INDUCED DEGRADATION OF THIN SIO2 GATE OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 244-247
DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS (VOL 77, PG 6205, 1995)/
Authors: STATHIS JH
Citation: Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS (VOL 77, PG 6205, 1995)/, Journal of applied physics, 78(8), 1995, pp. 5215-5215
INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE
Authors: DIMARIA DJ BUCHANAN DA STATHIS JH STAHLBUSH RE
Citation: Dj. Dimaria et al., INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE, Journal of applied physics, 77(5), 1995, pp. 2032-2040
DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100) SI SIO2 INTERFACE DEFECTS/
Authors: STATHIS JH
Citation: Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100) SI SIO2 INTERFACE DEFECTS/, Journal of applied physics, 77(12), 1995, pp. 6205-6207
ATOMIC-HYDROGEN REACTIONS WITH P(B) CENTERS AT THE (100) SI SIO2 INTERFACE/
Authors: STATHIS JH CARTIER E
Citation: Jh. Stathis et E. Cartier, ATOMIC-HYDROGEN REACTIONS WITH P(B) CENTERS AT THE (100) SI SIO2 INTERFACE/, Physical review letters, 72(17), 1994, pp. 2745-2748
DOWNSIZING PHYSICS FOR THE 90S
Authors: STATHIS JH
Citation: Jh. Stathis, DOWNSIZING PHYSICS FOR THE 90S, American journal of physics, 62(7), 1994, pp. 587-587
MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS
Authors: STATHIS JH
Citation: Jh. Stathis, MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS, Microelectronic engineering, 22(1-4), 1993, pp. 191-196
PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI SIO2 INTERFACE BY ATOMIC-HYDROGEN/
Authors: CARTIER E STATHIS JH BUCHANAN DA
Citation: E. Cartier et al., PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI SIO2 INTERFACE BY ATOMIC-HYDROGEN/, Applied physics letters, 63(11), 1993, pp. 1510-1512
INTERFACE DEFECTS OF ULTRATHIN RAPID-THERMAL OXIDE ON SILICON
Authors: STATHIS JH BUCHANAN DA QUINLAN DL PARSONS AH KOTECKI DE
Citation: Jh. Stathis et al., INTERFACE DEFECTS OF ULTRATHIN RAPID-THERMAL OXIDE ON SILICON, Applied physics letters, 62(21), 1993, pp. 2682-2684
Risultati: 1-23 |