Citation: Gv. Gadiyak et Jh. Stathis, PHYSICAL MODEL AND RESULTS OF NUMERICAL-SIMULATION OF THE DEGRADATIONOF A SI SIO2 STRUCTURE AS A RESULT OF ANNEALING IN VACUUM/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 966-969
Authors:
UREN MJ
NAYAR V
BRUNSON KM
ANTHONY CJ
STATHIS JH
CARTIER E
Citation: Mj. Uren et al., INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 145(2), 1998, pp. 683-689
Citation: Jh. Stathis, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/, Journal of physics. Condensed matter, 9(15), 1997, pp. 3297-3298
Citation: Mj. Uren et al., POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 219-222
Citation: Jh. Stathis, QUANTITATIVE MODEL OF THE THICKNESS DEPENDENCE OF BREAKDOWN IN ULTRA-THIN OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 325-328
Authors:
BUCHANAN DA
STATHIS JH
CARTIER E
DIMARIA DJ
Citation: Da. Buchanan et al., ON THE RELATIONSHIP BETWEEN STRESS-INDUCED LEAKAGE CURRENTS AND CATASTROPHIC BREAKDOWN IN ULTRA-THIN SIO2 BASED DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 329-332
Citation: Dj. Dimaria et Jh. Stathis, EXPLANATION FOR THE OXIDE THICKNESS DEPENDENCE OF BREAKDOWN CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Applied physics letters, 70(20), 1997, pp. 2708-2710
Citation: Mj. Uren et al., CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE, Journal of applied physics, 80(7), 1996, pp. 3915-3922
Citation: E. Cartier et Jh. Stathis, HOT-ELECTRON-INDUCED PASSIVATION OF SILICON DANGLING BONDS AT THE SI(111) SIO2 INTERFACE/, Applied physics letters, 69(1), 1996, pp. 103-105
Citation: Jh. Stathis, ELECTRICALLY DETECTED MAGNETIC-RESONANCE STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SIO2, Applied physics letters, 68(12), 1996, pp. 1669-1671
Citation: E. Cartier et Jh. Stathis, ATOMIC HYDROGEN-INDUCED DEGRADATION OF THE SI SIO2 STRUCTURE/, Microelectronic engineering, 28(1-4), 1995, pp. 3-10
Authors:
DIMARIA DJ
BUCHANAN DA
STATHIS JH
STAHLBUSH RE
Citation: Dj. Dimaria et al., INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE, Journal of applied physics, 77(5), 1995, pp. 2032-2040
Citation: Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100) SI SIO2 INTERFACE DEFECTS/, Journal of applied physics, 77(12), 1995, pp. 6205-6207
Citation: Jh. Stathis et E. Cartier, ATOMIC-HYDROGEN REACTIONS WITH P(B) CENTERS AT THE (100) SI SIO2 INTERFACE/, Physical review letters, 72(17), 1994, pp. 2745-2748
Citation: Jh. Stathis, MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS, Microelectronic engineering, 22(1-4), 1993, pp. 191-196
Citation: E. Cartier et al., PASSIVATION AND DEPASSIVATION OF SILICON DANGLING BONDS AT THE SI SIO2 INTERFACE BY ATOMIC-HYDROGEN/, Applied physics letters, 63(11), 1993, pp. 1510-1512