AAAAAA

   
Results: 1-19 |
Results: 19

Authors: Walsh, DS Dodd, PE Shaneyfelt, MR Schwank, JR
Citation: Ds. Walsh et al., Investigation of body-tie effects on ion beam induced charge collection insilicon-on-insulator FETs using the Sandia nuclear microprobe, NUCL INST B, 181, 2001, pp. 305-310

Authors: Schwank, JR Shaneyfelt, MR Meisenheimer, TL Draper, BL Vanhesden, K Fleetwood, DM
Citation: Jr. Schwank et al., Silicon-on-insulator non-volatile field-effect transistor memory, MICROEL ENG, 59(1-4), 2001, pp. 253-258

Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS
Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174

Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182

Authors: Ferlet-Cavrois, V Colladant, T Paillet, P Leray, JL Musseau, O Schwank, JR Shaneyfelt, MR Pelloie, JL de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188

Authors: Witczak, SC Lacoe, RC Shaneyfelt, MR Mayer, DC Schwank, JR Winokur, PS
Citation: Sc. Witczak et al., Implications of radiation-induced dopant deactivation for npn bipolar junction transistors, IEEE NUCL S, 47(6), 2000, pp. 2281-2288

Authors: Barnaby, HJ Cirba, CR Schrimpf, RD Fleetwood, DM Pease, RL Shaneyfelt, MR Turflinger, T Krieg, JF Maher, MC
Citation: Hj. Barnaby et al., Origins of total-dose response variability in linear bipolar microcircuits, IEEE NUCL S, 47(6), 2000, pp. 2342-2349

Authors: Shaneyfelt, MR Schwank, JR Witczak, SC Fleetwood, DM Pease, RL Winokur, PS Riewe, LC Hash, GL
Citation: Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545

Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Burns, JA Keast, CL Wyatt, PW
Citation: Jr. Schwank et al., New insights into fully-depleted SOI transistor response after total-dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 604-612

Authors: Winokur, PS Lum, GK Shaneyfelt, MR Sexton, FW Hash, GL Scott, L
Citation: Ps. Winokur et al., Use of COTS microelectronics in radiation environments, IEEE NUCL S, 46(6), 1999, pp. 1494-1503

Authors: Schwank, JR Shaneyfelt, MR Draper, BL Dodd, PE
Citation: Jr. Schwank et al., BUSFET - A radiation-hardened SOI transistor, IEEE NUCL S, 46(6), 1999, pp. 1809-1816

Authors: Nakakura, CY Hetherington, DL Shaneyfelt, MR Shea, PJ Erickson, AN
Citation: Cy. Nakakura et al., Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy, APPL PHYS L, 75(15), 1999, pp. 2319-2321

Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676

Authors: Fleetwood, DM Winokur, PS Shaneyfelt, MR Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge, IEEE NUCL S, 45(6), 1998, pp. 2366-2374

Authors: Vanheusden, K Fleetwood, DM Shaneyfelt, MR Draper, BL Schwank, JR
Citation: K. Vanheusden et al., The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films, IEEE NUCL S, 45(6), 1998, pp. 2391-2397

Authors: Dodd, PE Musseau, O Shaneyfelt, MR Sexton, FW D'hose, C Hash, GL Martinez, M Loemker, RA Leray, JL Winokur, PS
Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491

Authors: Sexton, FW Fleetwood, DM Shaneyfelt, MR Dodd, PE Hash, GL Schanwald, LP Loemker, RA Krisch, KS Green, ML Weir, BE Silverman, PJ
Citation: Fw. Sexton et al., Precursor ion damage and angular dependence of single event gate rupture in thin oxides, IEEE NUCL S, 45(6), 1998, pp. 2509-2518

Authors: Shaneyfelt, MR Dodd, PE Draper, BL Flores, RS
Citation: Mr. Shaneyfelt et al., Challenges in hardening technologies using shallow-trench isolation, IEEE NUCL S, 45(6), 1998, pp. 2584-2592

Authors: Schanwald, LP Schwank, JR Sniegowski, JJ Walsh, DS Smith, NF Peterson, KA Shaneyfelt, MR Winokur, PS Smith, JH Doyle, BL
Citation: Lp. Schanwald et al., Radiation effects on surface micromachined comb drives and microengines, IEEE NUCL S, 45(6), 1998, pp. 2789-2798
Risultati: 1-19 |