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Results: 1-14 |
Results: 14
LOW-TEMPERATURE PHOTOLUMINESCENCE DETERMINATION OF DISLOCATION SLIP SYSTEMS IN CDSE SINGLE-CRYSTALS
Authors: TARBAEV NI
Citation: Ni. Tarbaev, LOW-TEMPERATURE PHOTOLUMINESCENCE DETERMINATION OF DISLOCATION SLIP SYSTEMS IN CDSE SINGLE-CRYSTALS, Physics of the solid state, 40(10), 1998, pp. 1672-1675
ONE-DIMENSIONAL STRUCTURES FORMED BY LOW-TEMPERATURE SLIP OF DISLOCATIONS THAT ACT AS SOURCES OF DISLOCATION ABSORPTION AND EMISSION IN II-VI SEMICONDUCTOR CRYSTALS
Authors: TARBAEV NI SHEPELSKII GA
Citation: Ni. Tarbaev et Ga. Shepelskii, ONE-DIMENSIONAL STRUCTURES FORMED BY LOW-TEMPERATURE SLIP OF DISLOCATIONS THAT ACT AS SOURCES OF DISLOCATION ABSORPTION AND EMISSION IN II-VI SEMICONDUCTOR CRYSTALS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 580-586
PHOTOLUMINESCENCE OF CADMIUM TELLURIDE RECRYSTALLIZED BY NANOSECOND PULSED-LASER IRRADIATION
Authors: BABENTSOV VN TARBAEV NI
Citation: Vn. Babentsov et Ni. Tarbaev, PHOTOLUMINESCENCE OF CADMIUM TELLURIDE RECRYSTALLIZED BY NANOSECOND PULSED-LASER IRRADIATION, Semiconductors, 32(1), 1998, pp. 26-28
LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS
Authors: TARBAEV NI SHEPELSKII GA SALKOV EA
Citation: Ni. Tarbaev et al., LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS, JETP letters, 66(10), 1997, pp. 675-680
BIREFRINGENCE OF CADMIUM TELLURIDE AT 77 K INDUCED BY UNIAXIAL-STRESS
Authors: VASKO FT STRIKHA MV TARBAEV NI SHEPELSKII GA
Citation: Ft. Vasko et al., BIREFRINGENCE OF CADMIUM TELLURIDE AT 77 K INDUCED BY UNIAXIAL-STRESS, Semiconductors, 30(6), 1996, pp. 545-549
LOW-TEMPERATURE DISPERSION OF PIEZOBIREFR INGENCE AND OPTICAL DIAGNOSTICS OF INTERNAL MECHANICAL STRESSES IN CADMIUM TELLURIDE
Authors: TARBAEV NI SHEPELSKII GA
Citation: Ni. Tarbaev et Ga. Shepelskii, LOW-TEMPERATURE DISPERSION OF PIEZOBIREFR INGENCE AND OPTICAL DIAGNOSTICS OF INTERNAL MECHANICAL STRESSES IN CADMIUM TELLURIDE, Optika i spektroskopia, 81(5), 1996, pp. 842-847
EVOLUTION OF THE IMPURITY-DEFECT SYSTEM OF UNDOPED N-TYPE AND P-TYPE CDTE AT ROOM-TEMPERATURE
Authors: BABENTSOV VN VLASENKO AI TARBAEV NI
Citation: Vn. Babentsov et al., EVOLUTION OF THE IMPURITY-DEFECT SYSTEM OF UNDOPED N-TYPE AND P-TYPE CDTE AT ROOM-TEMPERATURE, Semiconductors, 29(9), 1995, pp. 813-816
RADIATIVE RECOMBINATION TRANSITIONS BETWEEN STATES OF BOUND AND FREE-EXCITONS IN UNIAXIALLY STRAINED CADMIUM TELLURIDE
Authors: STRIKHA MV TARBAEV NI SHEPELSKII GA
Citation: Mv. Strikha et al., RADIATIVE RECOMBINATION TRANSITIONS BETWEEN STATES OF BOUND AND FREE-EXCITONS IN UNIAXIALLY STRAINED CADMIUM TELLURIDE, Semiconductors, 29(9), 1995, pp. 838-843
TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM
Authors: BABENTSOV VN VLASENKO AI TARBAEV NI
Citation: Vn. Babentsov et al., TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM, Semiconductors, 29(2), 1995, pp. 165-168
PIEZOOPTIC EXAMINATION OF BOUND EXCITON RECOMBINATION IN UNIAXIALLY STRAINED CDTE
Authors: SHEPELSKY GA STRIKHA MV TARBAEV NI
Citation: Ga. Shepelsky et al., PIEZOOPTIC EXAMINATION OF BOUND EXCITON RECOMBINATION IN UNIAXIALLY STRAINED CDTE, Solid state communications, 94(3), 1995, pp. 237-241
LOW-TEMPERATURE DIFFUSION OF CADMIUM IN P-TYPE CDTE - ANALYSIS OF LUMINESCENCE PROFILES AND X-RAY CHARACTERISTIC RADIATION
Authors: BABENTSOV VN KLETSKII SV TARBAEV NI
Citation: Vn. Babentsov et al., LOW-TEMPERATURE DIFFUSION OF CADMIUM IN P-TYPE CDTE - ANALYSIS OF LUMINESCENCE PROFILES AND X-RAY CHARACTERISTIC RADIATION, Semiconductors, 28(12), 1994, pp. 1194-1196
SHORT-TIME ANNEALING OF AS-GROWN P-CDTE WAFERS
Authors: SOCHINSKII NV SERRANO MD BABENTSOV VN TARBAEV NI GARRIDO J DIEGUEZ E
Citation: Nv. Sochinskii et al., SHORT-TIME ANNEALING OF AS-GROWN P-CDTE WAFERS, Semiconductor science and technology, 9(9), 1994, pp. 1713-1718
INFLUENCE OF GALLIUM ON THE LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRAOF DIFFUSION-DOPED CADMIUM TELLURIDE
Authors: BABENTSOV VN VLASENKO AI SOCHINSKII NV TARBAEV NI
Citation: Vn. Babentsov et al., INFLUENCE OF GALLIUM ON THE LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRAOF DIFFUSION-DOPED CADMIUM TELLURIDE, Semiconductors, 27(10), 1993, pp. 883-886
THE LOW-TEMPERATURE ANNEALING OF P-CADMIUM TELLURIDE IN GALLIUM-BATH
Authors: SOCHINSKII NV BABENTSOV VN TARBAEV NI SERRANO MD DIEGUEZ E
Citation: Nv. Sochinskii et al., THE LOW-TEMPERATURE ANNEALING OF P-CADMIUM TELLURIDE IN GALLIUM-BATH, Materials research bulletin, 28(10), 1993, pp. 1061-1066
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