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Results: 1-25 | 26-35
Results: 1-25/35
A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON NMOSFET INVERSION-LAYERS
Authors: SHIH WK JALLEPALLI S YEAP CF RASHED M MAZIAR CM TASCH AF
Citation: Wk. Shih et al., A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON NMOSFET INVERSION-LAYERS, VLSI design (Print), 6(1-4), 1998, pp. 53-56
COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS
Authors: HARELAND SA MANASSIAN M SHIH WK JALLEPALLI S WANG HH CHINDALORE GL TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1487-1493
A DETAILED PHYSICAL MODEL FOR ION IMPLANT INDUCED DAMAGE IN SILICON
Authors: TIAN SY MORRIS MF MORRIS SJ OBRADOVIC B WANG G TASCH AF SNELL CM
Citation: Sy. Tian et al., A DETAILED PHYSICAL MODEL FOR ION IMPLANT INDUCED DAMAGE IN SILICON, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1226-1238
AN IMPROVED TECHNIQUE AND EXPERIMENTAL RESULTS FOR THE EXTRACTION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS
Authors: CHINDALORE GL MCKEON JB MUDANAI S HARELAND SA SHIH WK WANG C TASCH AF MAZIAR CM
Citation: Gl. Chindalore et al., AN IMPROVED TECHNIQUE AND EXPERIMENTAL RESULTS FOR THE EXTRACTION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 502-511
A PHYSICALLY-BASED MODEL FOR QUANTIZATION EFFECTS IN HOLE INVERSION-LAYERS
Authors: HARELAND SA JALLEPALLI S SHIH WK WANG HH CHINDALORE GL TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., A PHYSICALLY-BASED MODEL FOR QUANTIZATION EFFECTS IN HOLE INVERSION-LAYERS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 179-186
EXPERIMENTAL-DETERMINATION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS
Authors: MCKEON JB CHINDALORE G HARELAND SA SHIH WK WANG C TASCH AF MAZIAR CM
Citation: Jb. Mckeon et al., EXPERIMENTAL-DETERMINATION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS, IEEE electron device letters, 18(5), 1997, pp. 200-202
EXPERIMENTAL-DETERMINATION OF THRESHOLD VOLTAGE SHIFTS DUE TO QUANTUM-MECHANICAL EFFECTS IN MOS ELECTRON AND HOLE INVERSION-LAYERS
Authors: CHINDALORE G HARELAND SA JALLEPALLI S TASCH AF MAZIAR CM CHIA VKF SMITH S
Citation: G. Chindalore et al., EXPERIMENTAL-DETERMINATION OF THRESHOLD VOLTAGE SHIFTS DUE TO QUANTUM-MECHANICAL EFFECTS IN MOS ELECTRON AND HOLE INVERSION-LAYERS, IEEE electron device letters, 18(5), 1997, pp. 206-208
A FULL-BAND MONTE-CARLO MODEL FOR HOLE TRANSPORT IN SILICON
Authors: JALLEPALLI S RASHED M SHIH WK MAZIAR CM TASCH AF
Citation: S. Jallepalli et al., A FULL-BAND MONTE-CARLO MODEL FOR HOLE TRANSPORT IN SILICON, Journal of applied physics, 81(5), 1997, pp. 2250-2255
ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION
Authors: CHASON E PICRAUX ST POATE JM BORLAND JO CURRENT MI DELARUBIA TD EAGLESHAM DJ HOLLAND OW LAW ME MAGEE CW MAYER JW MELNGAILIS J TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
A SIMPLE-MODEL FOR QUANTUM-MECHANICAL EFFECTS IN HOLE INVERSION-LAYERS IN SILICON PMOS DEVICES
Authors: HARELAND SA JALLEPALLI S CHINDALORE G SHIH WK TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., A SIMPLE-MODEL FOR QUANTUM-MECHANICAL EFFECTS IN HOLE INVERSION-LAYERS IN SILICON PMOS DEVICES, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1172-1173
ELECTRON AND HOLE QUANTIZATION AND THEIR IMPACT ON DEEP-SUBMICRON SILICON P-MOSFET AND N-MOSFET CHARACTERISTICS
Authors: JALLEPALLI S BUDE J SHIH WK PINTO MR MAZIAR CM TASCH AF
Citation: S. Jallepalli et al., ELECTRON AND HOLE QUANTIZATION AND THEIR IMPACT ON DEEP-SUBMICRON SILICON P-MOSFET AND N-MOSFET CHARACTERISTICS, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 297-303
THERMIONIC EMISSION MODEL OF ELECTRON GATE CURRENT IN SUBMICRON NMOSFETS
Authors: HASNAT K YEAP CF JALLEPALLI S HARELAND SA SHIH WK AGOSTINELLI VM TASCH AF MAZIAR CM
Citation: K. Hasnat et al., THERMIONIC EMISSION MODEL OF ELECTRON GATE CURRENT IN SUBMICRON NMOSFETS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 129-138
ANALYSIS OF ULTRASHALLOW DOPING PROFILES OBTAINED BY LOW-ENERGY ION-IMPLANTATION
Authors: PARAB KB YANG SH MORRIS SJ TIAN S TASCH AF KAMENITSA D SIMONTON R MAGEE C
Citation: Kb. Parab et al., ANALYSIS OF ULTRASHALLOW DOPING PROFILES OBTAINED BY LOW-ENERGY ION-IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 260-264
MONTE-CARLO SIMULATION OF ARSENIC ION-IMPLANTATION IN (100) SINGLE-CRYSTAL SILICON
Authors: YANG SH MORRIS SJ TIAN SY PARAB KB TASCH AF
Citation: Sh. Yang et al., MONTE-CARLO SIMULATION OF ARSENIC ION-IMPLANTATION IN (100) SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 49-58
THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON
Authors: TIAN S YANG SH MORRIS S PARAB K TASCH AF KAMENITSA D REECE R FREER B SIMONTON RB MAGEE C
Citation: S. Tian et al., THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 144-147
ULTRA-SHALLOW JUNCTION FORMATION IN SILICON USING ION-IMPLANTATION
Authors: TASCH AF BANERJEE SK
Citation: Af. Tasch et Sk. Banerjee, ULTRA-SHALLOW JUNCTION FORMATION IN SILICON USING ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 177-183
A PSEUDO-LUCKY ELECTRON MODEL FOR SIMULATION OF ELECTRON GATE CURRENTIN SUBMICRON NMOSFETS
Authors: HASNAT K YEAP CF JALLEPALLI S SHIH WK HARELAND SA AGOSTINELI VM TASCH AF MAZIAR CM
Citation: K. Hasnat et al., A PSEUDO-LUCKY ELECTRON MODEL FOR SIMULATION OF ELECTRON GATE CURRENTIN SUBMICRON NMOSFETS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1264-1273
A COMPUTATIONALLY EFFICIENT MODEL FOR INVERSION LAYER QUANTIZATION EFFECTS IN DEEP-SUBMICRON N-CHANNEL MOSFETS
Authors: HARELAND SA KRISHNAMURTHY S JALLEPALLI S YEAP CF HASNAT K TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., A COMPUTATIONALLY EFFICIENT MODEL FOR INVERSION LAYER QUANTIZATION EFFECTS IN DEEP-SUBMICRON N-CHANNEL MOSFETS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 90-96
THE VIABILITY OF GEH4-BASED IN-SITU CLEAN FOR LOW-TEMPERATURE SILICONEPITAXIAL-GROWTH
Authors: WANG CL UNNIKRISHNAN S KIM BY KWONG DL TASCH AF
Citation: Cl. Wang et al., THE VIABILITY OF GEH4-BASED IN-SITU CLEAN FOR LOW-TEMPERATURE SILICONEPITAXIAL-GROWTH, Journal of the Electrochemical Society, 143(7), 1996, pp. 2387-2391
A MONTE-CARLO BINARY COLLISION MODEL FOR BF2 IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON
Authors: YANG SH SNELL CM MORRIS SJ TIAN S PARAB K OBRADOVICH B MORRIS M TASCH AF
Citation: Sh. Yang et al., A MONTE-CARLO BINARY COLLISION MODEL FOR BF2 IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON, Journal of the Electrochemical Society, 143(11), 1996, pp. 3784-3790
EVOLUTION OF SILICON SURFACE-MORPHOLOGY DURING H-2 ANNEALING IN A RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION SYSTEM
Authors: WANG CL UNNIKRISHNAN S KIM BY KWONG DL TASCH AF
Citation: Cl. Wang et al., EVOLUTION OF SILICON SURFACE-MORPHOLOGY DURING H-2 ANNEALING IN A RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION SYSTEM, Applied physics letters, 68(1), 1996, pp. 108-110
AN ACCURATE AND EFFICIENT MODEL FOR BORON IMPLANTS THROUGH THIN OXIDELAYERS INTO SINGLE-CRYSTAL SILICON
Authors: MORRIS SJ YANG SH LIM DH PARK C KLEIN KM MANASSIAN M TASCH AF
Citation: Sj. Morris et al., AN ACCURATE AND EFFICIENT MODEL FOR BORON IMPLANTS THROUGH THIN OXIDELAYERS INTO SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 408-413
ADSORPTION AND DECOMPOSITION OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - SURFACE-REACTIONS FOR AN ATOMIC LAYER EPITAXIAL APPROACH TO COLUMN-IV EPITAXY
Authors: KELLERMAN BK MAHAJAN A RUSSELL NM EKERDT JG BANERJEE SK TASCH AF CAMPION A WHITE JM BONSER DJ
Citation: Bk. Kellerman et al., ADSORPTION AND DECOMPOSITION OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - SURFACE-REACTIONS FOR AN ATOMIC LAYER EPITAXIAL APPROACH TO COLUMN-IV EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1819-1825
MODELING OF ION-IMPLANTATION IN SINGLE-CRYSTAL SILICON
Authors: TASCH AF YANG SH MORRIS SJ
Citation: Af. Tasch et al., MODELING OF ION-IMPLANTATION IN SINGLE-CRYSTAL SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 173-179
IMPROVED EFFICIENCY IN MONTE-CARLO SIMULATION OF ION-IMPLANTED IMPURITY PROFILES IN SINGLE-CRYSTAL MATERIALS
Authors: YANG SH LIM D MORRIS SJ TASCH AF
Citation: Sh. Yang et al., IMPROVED EFFICIENCY IN MONTE-CARLO SIMULATION OF ION-IMPLANTED IMPURITY PROFILES IN SINGLE-CRYSTAL MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 242-246
Risultati: 1-25 | 26-35