Authors:
Trajkovic, T
Udrea, F
Waind, PR
Thomson, J
Amaratunga, GAJ
Milne, WI
Citation: T. Trajkovic et al., Optimum design of 1.4kV non-punch-through trench IGBTs: the next generation of high-power switching devices, IEE P-CIRC, 148(2), 2001, pp. 71-74
Authors:
Brezeanu, G
Badila, M
Tudor, B
Millan, J
Godignon, P
Udrea, F
Amaratunga, GAJ
Mihaila, A
Citation: G. Brezeanu et al., Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage, IEEE DEVICE, 48(9), 2001, pp. 2148-2153
Authors:
Trajkovic, T
Udrea, F
Amaratunga, GAJ
Milne, WI
Chan, SSM
Waind, PR
Thomson, J
Crees, DE
Citation: T. Trajkovic et al., Silicon MOS controlled bipolar power switching devices using trench technology, INT J ELECT, 86(10), 1999, pp. 1153-1168