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Results: 1-18 |
Results: 18
OBSERVATION OF FRACTAL PATTERNS ON SUPERCONDUCTING BI2SR2CA1CU2O7-X FILMS ON SILICON BY AFM
Authors: QIAN WS LIU R WEI TL
Citation: Ws. Qian et al., OBSERVATION OF FRACTAL PATTERNS ON SUPERCONDUCTING BI2SR2CA1CU2O7-X FILMS ON SILICON BY AFM, Chinese Science Bulletin, 42(6), 1997, pp. 526-528
FRACTAL FORMATION IN SPUTTERED FILMS OF BI2SR2CACU2O7-X ON SI SUBSTRATES
Authors: LIU R QIAN WS WEI TL
Citation: R. Liu et al., FRACTAL FORMATION IN SPUTTERED FILMS OF BI2SR2CACU2O7-X ON SI SUBSTRATES, Chinese Physics Letters, 14(8), 1997, pp. 621-624
QUANTITATIVE MODELING OF CURRENT GAIN AND CUTOFF FREQUENCY AT HIGH INJECTION LEVELS AT 77 AND 300K IN POLYSILICON EMITTER CONTACT BIPOLAR-TRANSISTOR
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, QUANTITATIVE MODELING OF CURRENT GAIN AND CUTOFF FREQUENCY AT HIGH INJECTION LEVELS AT 77 AND 300K IN POLYSILICON EMITTER CONTACT BIPOLAR-TRANSISTOR, International journal of electronics, 82(5), 1997, pp. 451-470
MODELING OF HOOGE PARAMETER OF ELECTRONS IN HEAVILY PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, MODELING OF HOOGE PARAMETER OF ELECTRONS IN HEAVILY PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES, International journal of electronics, 82(3), 1997, pp. 219-226
A UNIFIED MODEL FOR THE VERTICAL BASE WIDENING EFFECT IN SILICON BIPOLAR-TRANSISTOR AT 77 AND 300 K
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, A UNIFIED MODEL FOR THE VERTICAL BASE WIDENING EFFECT IN SILICON BIPOLAR-TRANSISTOR AT 77 AND 300 K, International journal of electronics, 82(1), 1997, pp. 1-7
MODIFICATION OF THE EINSTEIN EQUATIONS OF MAJORITY-CARRIERS AND MINORITY-CARRIERS WITH BAND-GAP NARROWING EFFECT IN N-TYPE DEGENERATE SILICON WITH DEGENERATE APPROXIMATION AND WITH NON-PARABOLIC ENERGY-BANDS
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, MODIFICATION OF THE EINSTEIN EQUATIONS OF MAJORITY-CARRIERS AND MINORITY-CARRIERS WITH BAND-GAP NARROWING EFFECT IN N-TYPE DEGENERATE SILICON WITH DEGENERATE APPROXIMATION AND WITH NON-PARABOLIC ENERGY-BANDS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 913-914
CALCULATION AND ANALYSIS OF THE INTRINSIC CARRIER CONCENTRATION AND THE EINSTEIN RELATION FOR HEAVILY-DOPED SILICON FROM 77 K TO 300 K
Authors: XIAO ZX WEI TL JIANG Z
Citation: Zx. Xiao et al., CALCULATION AND ANALYSIS OF THE INTRINSIC CARRIER CONCENTRATION AND THE EINSTEIN RELATION FOR HEAVILY-DOPED SILICON FROM 77 K TO 300 K, JPN J A P 1, 35(3), 1996, pp. 1599-1604
INFLUENCE OF SILICON DOPING DENSITY ON VACUUM FIELD-EMISSION TRIODE AT HIGH-FREQUENCY RANGE
Authors: QIN M HUANG QA WEI TL
Citation: M. Qin et al., INFLUENCE OF SILICON DOPING DENSITY ON VACUUM FIELD-EMISSION TRIODE AT HIGH-FREQUENCY RANGE, International journal of infrared and millimeter waves, 17(8), 1996, pp. 1447-1456
INVESTIGATION OF INTRINSIC-CARRIER CONCENTRATION, MINORITY-CARRIER CONCENTRATION AND BUILT-IN ELECTRIC-FIELD FOR HEAVILY BORON-DOPED SILICON WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURES
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, INVESTIGATION OF INTRINSIC-CARRIER CONCENTRATION, MINORITY-CARRIER CONCENTRATION AND BUILT-IN ELECTRIC-FIELD FOR HEAVILY BORON-DOPED SILICON WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURES, International journal of electronics, 81(6), 1996, pp. 647-655
QUANTITATIVE MODELING OF DC AND TRANSIENT CHARACTERISTICS AT HIGH INJECTION LEVEL AT 77 AND 300 K IN SILICON BIPOLAR-TRANSISTOR
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, QUANTITATIVE MODELING OF DC AND TRANSIENT CHARACTERISTICS AT HIGH INJECTION LEVEL AT 77 AND 300 K IN SILICON BIPOLAR-TRANSISTOR, International journal of electronics, 81(3), 1996, pp. 247-262
ANALYSIS AND SIMULATION OF THE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS FOR LOW-TEMPERATURE OPERATION
Authors: HUANG LX WEI TL ZHENG JA
Citation: Lx. Huang et al., ANALYSIS AND SIMULATION OF THE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS FOR LOW-TEMPERATURE OPERATION, International journal of electronics, 80(1), 1996, pp. 21-33
ANALYSIS OF THE HIGH INJECTION EFFECTS IN SILICON BIPOLAR-TRANSISTORSAT LOW-TEMPERATURES
Authors: XIAO ZX ZHENG J WEI TL LI Y WANG MW
Citation: Zx. Xiao et al., ANALYSIS OF THE HIGH INJECTION EFFECTS IN SILICON BIPOLAR-TRANSISTORSAT LOW-TEMPERATURES, Solid-state electronics, 38(8), 1995, pp. 1455-1460
CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE
Authors: XIAO ZX WEI TL
Citation: Zx. Xiao et Tl. Wei, CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE, Solid-state electronics, 38(10), 1995, pp. 1837-1838
CALCULATION AND ANALYSIS OF DC PARAMETERS IN SILICON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AMORPHOUS EMITTERS AT LOW-TEMPERATURES
Authors: ZHENG J XIAO ZX WU J WEI TL
Citation: J. Zheng et al., CALCULATION AND ANALYSIS OF DC PARAMETERS IN SILICON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AMORPHOUS EMITTERS AT LOW-TEMPERATURES, Journal of non-crystalline solids, 185(1-2), 1995, pp. 94-100
DOUBLE-CHANNEL HOT-CARRIER INJECTION EFFECTS IN NMOSFETS AT 77-K
Authors: LIU WD WEI TL ZHENG J
Citation: Wd. Liu et al., DOUBLE-CHANNEL HOT-CARRIER INJECTION EFFECTS IN NMOSFETS AT 77-K, International journal of electronics, 77(6), 1994, pp. 887-897
77 K OPERATION OF AMORPHOUS SI SI HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: ZHENG J WU J WEI TL WANG Y WANG S TONG QY
Citation: J. Zheng et al., 77 K OPERATION OF AMORPHOUS SI SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, JPN J A P 1, 32(6A), 1993, pp. 2632-2633
ANALYSIS OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF SILICON BIPOLAR-TRANSISTORS FROM 77-K TO 400-K
Authors: ZHENG J HUANG LX CAO JC WU J WEI TL
Citation: J. Zheng et al., ANALYSIS OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF SILICON BIPOLAR-TRANSISTORS FROM 77-K TO 400-K, Solid-state electronics, 36(11), 1993, pp. 1636-1638
LOW-TEMPERATURE CHARACTERISTICS OF ELECTRICAL PARAMETERS IN AMORPHOUSSI SI HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: ZHENG J WU J WEI TL
Citation: J. Zheng et al., LOW-TEMPERATURE CHARACTERISTICS OF ELECTRICAL PARAMETERS IN AMORPHOUSSI SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, International journal of electronics, 75(5), 1993, pp. 871-876
Risultati: 1-18 |