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Results: 1-25 | 26-35
Results: 1-25/35
SURFACE-STRUCTURE OF INP(001) UNDER DYNAMIC AND STATIC CONDITIONS OF MOLECULAR-BEAM EPITAXY
Authors: PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Pj. Parbrook et al., SURFACE-STRUCTURE OF INP(001) UNDER DYNAMIC AND STATIC CONDITIONS OF MOLECULAR-BEAM EPITAXY, Applied surface science, 123, 1998, pp. 313-318
IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/
Authors: LACEY G WHITEHOUSE CR PARBROOK PJ CULLIS AG KEIR AM MOCK P JOHNSON AD SMITH GW CLARK GF TANNER BK MARTIN T LUNN B HOGG JHC EMENY MT MURPHY B BENNETT S
Citation: G. Lacey et al., IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/, Applied surface science, 123, 1998, pp. 718-724
MEASUREMENTS BY X-RAY TOPOGRAPHY OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS
Authors: ODONNELL CB LACEY G HORSBURGH G CULLIS AG WHITEHOUSE CR PARBROOK PJ MEREDITH W GALBRAITH I MOCK P PRIOR KA CAVENETT BC
Citation: Cb. Odonnell et al., MEASUREMENTS BY X-RAY TOPOGRAPHY OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS, Journal of crystal growth, 185, 1998, pp. 95-99
OPTICAL MONITORING OF INP MONOLAYER GROWTH-RATES
Authors: PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Pj. Parbrook et al., OPTICAL MONITORING OF INP MONOLAYER GROWTH-RATES, Applied physics letters, 73(3), 1998, pp. 345-347
TOPOGRAPHY MEASUREMENTS OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS
Authors: HORSBURGH G PRIOR KA MEREDITH W GALBRAITH I CAVENETT BC WHITEHOUSE CR LACEY G CULLIS AG PARBROOK PJ MOCK P MIZUNO K
Citation: G. Horsburgh et al., TOPOGRAPHY MEASUREMENTS OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS, Applied physics letters, 72(24), 1998, pp. 3148-3150
CCDS FOR X-RAY TOPOGRAPHY AT SYNCHROTRONS
Authors: CASTELLI CM ALLINSON NM BARNETT SJ CLARK GF MOON K WHITEHOUSE CR WELLS A
Citation: Cm. Castelli et al., CCDS FOR X-RAY TOPOGRAPHY AT SYNCHROTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 391(3), 1997, pp. 481-484
IN-SITU MONITORING OF THE SURFACE RECONSTRUCTIONS ON INP(001) PREPARED BY MOLECULAR-BEAM EPITAXY
Authors: OZANYAN KB PARBROOK PJ HOPKINSON M WHITEHOUSE CR SOBIESIERSKI Z WESTWOOD DI
Citation: Kb. Ozanyan et al., IN-SITU MONITORING OF THE SURFACE RECONSTRUCTIONS ON INP(001) PREPARED BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(1), 1997, pp. 474-476
EMISSION MECHANISMS AND BAND FILLING EFFECTS IN GAAS-ALGAAS V-GROOVE QUANTUM WIRES
Authors: TRIBE WR STEER MJ MOWBRAY DJ SKOLNICK MS FORSHAW AN ROBERTS JS HILL G PATE MA WHITEHOUSE CR WILLIAMS GM
Citation: Wr. Tribe et al., EMISSION MECHANISMS AND BAND FILLING EFFECTS IN GAAS-ALGAAS V-GROOVE QUANTUM WIRES, Applied physics letters, 70(8), 1997, pp. 993-995
AS P EXCHANGE ON INP(001) STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY/
Authors: SOBIESIERSKI Z WESTWOOD DI PARBROOK PJ OZANYAN KB HOPKINSON M WHITEHOUSE CR
Citation: Z. Sobiesierski et al., AS P EXCHANGE ON INP(001) STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY/, Applied physics letters, 70(11), 1997, pp. 1423-1425
DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS BY MOCVD FROM THE TRIMETHYLALUMINUM-AMMONIA ADDUCT
Authors: JONES AC RUSHWORTH SA HOULTON DJ ROBERTS JS ROBERTS V WHITEHOUSE CR CRITCHLOW GW
Citation: Ac. Jones et al., DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS BY MOCVD FROM THE TRIMETHYLALUMINUM-AMMONIA ADDUCT, CHEMICAL VAPOR DEPOSITION, 2(1), 1996, pp. 5
ELECTRONIC-ENERGY LEVELS AND ENERGY RELAXATION MECHANISMS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/
Authors: STEER MJ MOWBRAY DJ TRIBE WR SKOLNICK MS STURGE MD HOPKINSON M CULLIS AG WHITEHOUSE CR MURRAY R
Citation: Mj. Steer et al., ELECTRONIC-ENERGY LEVELS AND ENERGY RELAXATION MECHANISMS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 54(24), 1996, pp. 17738-17744
CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM
Authors: FREER RW LANE PA MARTIN T WHITEHOUSE CR WHITAKER TJ WILLIAMS GM CULLIS AG CALCOTT PDJ NASH KD BUCHANNAN H
Citation: Rw. Freer et al., CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM, Journal of applied physics, 79(2), 1996, pp. 917-922
LOW-ENERGY FOCUSED ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH FOR THE FABRICATION OF 3-DIMENSIONAL DEVICES - THE EFFECT OF DOPANT SURFACE SEGREGATION
Authors: THOMPSON JH SAZIO PJ BEERE HE JONES GAC RITCHIE DA LINFIELD EH SMITH GW HOULTON M WHITEHOUSE CR
Citation: Jh. Thompson et al., LOW-ENERGY FOCUSED ION-BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH FOR THE FABRICATION OF 3-DIMENSIONAL DEVICES - THE EFFECT OF DOPANT SURFACE SEGREGATION, JPN J A P 1, 34(8B), 1995, pp. 4477-4480
METAL-IN80AL20SB INTERFACE FORMATION - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY
Authors: CLARK SA WILKS SP WILLIAMS RH JOHNSON AD WHITEHOUSE CR
Citation: Sa. Clark et al., METAL-IN80AL20SB INTERFACE FORMATION - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2289-2292
CHEMICAL APPROACHES TO THE METALORGANIC CVD OF GROUP-III NITRIDES
Authors: JONES AC WHITEHOUSE CR ROBERTS JS
Citation: Ac. Jones et al., CHEMICAL APPROACHES TO THE METALORGANIC CVD OF GROUP-III NITRIDES, CHEMICAL VAPOR DEPOSITION, 1(3), 1995, pp. 65
ANTIMONY CAPPING AND DECAPPING OF INALSB(100)
Authors: CLARK SA CAIRNS JW WILKS SP WILLIAMS RH JOHNSON AD WHITEHOUSE CR
Citation: Sa. Clark et al., ANTIMONY CAPPING AND DECAPPING OF INALSB(100), Surface science, 336(1-2), 1995, pp. 193-198
IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION
Authors: BARNETT SJ KEIR AM CULLIS AG JOHNSON AD JEFFERSON J SMITH GW MARTIN T WHITEHOUSE CR LACEY G CLARK GF TANNER BK SPIRKL W LUNN B HOGG JCH ASHU P HAGSTON WE CASTELLI CM
Citation: Sj. Barnett et al., IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 17-22
IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES
Authors: WHITEHOUSE CR CULLIS AG BARNETT SJ USHER BF CLARK GF KEIR AM TANNER BK LUNN B HOGG JCH JOHNSON AD LACEY G SPIRKL W HAGSTON WE JEFFERSON JH ASHU P SMITH GW
Citation: Cr. Whitehouse et al., IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES, Journal of crystal growth, 150(1-4), 1995, pp. 85-91
MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS GAAS STRAINED-LAYER RELAXATION PROCESSES/
Authors: ASHU PA JEFFERSON JH CULLIS AG HAGSTON WE WHITEHOUSE CR
Citation: Pa. Ashu et al., MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS GAAS STRAINED-LAYER RELAXATION PROCESSES/, Journal of crystal growth, 150(1-4), 1995, pp. 176-179
CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES
Authors: FREER RW MARTIN T LANE PA WHITEHOUSE CR WHITAKER TJ HOULTON M CALCOTT PDJ LEE D RUSHWORTH SA
Citation: Rw. Freer et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES, Journal of crystal growth, 150(1-4), 1995, pp. 539-545
DETERMINATION OF THE BONDING OF CARBON ACCEPTORS IN INXGA1-XAS FOR X-LESS-THAN-0.1
Authors: PRITCHARD RE NEWMAN RC WAGNER J MAIER M MAZUELAS A PLOOG KH LANE PA MARTIN T WHITEHOUSE CR
Citation: Re. Pritchard et al., DETERMINATION OF THE BONDING OF CARBON ACCEPTORS IN INXGA1-XAS FOR X-LESS-THAN-0.1, Applied physics letters, 66(20), 1995, pp. 2676-2678
OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
Authors: TAGG WIE SKOLNICK MS MOWBRAY DJ WHITTAKER DM EMENY MT WHITEHOUSE CR BUCKLE PD
Citation: Wie. Tagg et al., OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Semiconductor science and technology, 9(9), 1994, pp. 1608-1615
ADVANCES IN THE UNDERSTANDING OF CHEMICAL BEAM EPITAXY GROWTH MECHANISMS
Authors: MARTIN T FREER RW WHITEHOUSE CR LANE PA
Citation: T. Martin et al., ADVANCES IN THE UNDERSTANDING OF CHEMICAL BEAM EPITAXY GROWTH MECHANISMS, Journal of crystal growth, 136(1-4), 1994, pp. 69-77
DEMONSTRATION OF QUANTUM CONFINEMENT IN INSB-IN1-XALXSB MULTIQUANTUM WELLS USING PHOTOLUMINESCENCE SPECTROSCOPY
Authors: SAKER MK WHITTAKER DM SKOLNICK MS MCCONVILLE CF WHITEHOUSE CR BARNETT SJ PITT AD CULLIS AG WILLIAMS GM
Citation: Mk. Saker et al., DEMONSTRATION OF QUANTUM CONFINEMENT IN INSB-IN1-XALXSB MULTIQUANTUM WELLS USING PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 65(9), 1994, pp. 1118-1120
TUNNELING DYNAMICS OF HOLES IN GAAS AL0.33GA0.67AS DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY/
Authors: LOVERING DJ DENTON GJ GREGORY A PHILLIPS RT SKOLNICK MS HIGGS AW SIMMONDS PE SMITH GW WHITEHOUSE CR
Citation: Dj. Lovering et al., TUNNELING DYNAMICS OF HOLES IN GAAS AL0.33GA0.67AS DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY/, Journal of physics. Condensed matter, 5(17), 1993, pp. 2825-2835
Risultati: 1-25 | 26-35