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Results: 1-25 | 26-46
Results: 1-25/46
Characterization of deep impurities in semiconductors by terahertz tunneling ionization
Authors: Ganichev, SD Ziemann, E Yassievich, IN Perel, VI Prettl, W
Citation: Sd. Ganichev et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, MAT SC S PR, 4(1-3), 2001, pp. 281-284
Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method
Authors: Andreev, BA Krasil'nik, ZF Kuznetsov, VP Soldatkin, AO Bresler, MS Gusev, OB Yassievich, IN
Citation: Ba. Andreev et al., Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method, PHYS SOL ST, 43(6), 2001, pp. 1012-1017
Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Yassievich, IN
Citation: Ms. Bresler et al., Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, PHYS SOL ST, 43(4), 2001, pp. 625-628
The distribution function of hot charge carriers under conditions of resonance scattering
Authors: Prokof'ev, AA Odnoblyudov, MA Yassievich, IN
Citation: Aa. Prokof'Ev et al., The distribution function of hot charge carriers under conditions of resonance scattering, SEMICONDUCT, 35(5), 2001, pp. 565-572
Stimulated emission in erbium-doped silicon structures under optical pumping
Authors: Bresler, MS Gusev, OB Terukov, EI Yassievich, IN Zakharchenya, BP Emel'yanov, VI Kamenev, BV Kashkarov, PK Konstantinova, EA Timoshenko, VY
Citation: Ms. Bresler et al., Stimulated emission in erbium-doped silicon structures under optical pumping, MAT SCI E B, 81(1-3), 2001, pp. 52-55
Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures
Authors: Yassievich, IN Bresler, MS Gusev, OB Pak, PE Tsendin, KD Terukov, EI
Citation: In. Yassievich et al., Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, MAT SCI E B, 81(1-3), 2001, pp. 182-184
Resonant states and terahertz emission
Authors: Yassievich, IN Kagan, MS Chao, KA
Citation: In. Yassievich et al., Resonant states and terahertz emission, IAN FIZ, 65(2), 2001, pp. 240-242
Stimulated emission in erbiumdoped silicon structures at optical pumping
Authors: Bresler, MS Gusev, OB Emel'yanov, VI Zakharchenya, BP Kamenev, BV Kashkarov, PK Konstantinova, EA Timoshenko, VY Terukov, EI Yassievich, IN
Citation: Ms. Bresler et al., Stimulated emission in erbiumdoped silicon structures at optical pumping, IAN FIZ, 65(2), 2001, pp. 268-270
Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method
Authors: Andreev, BA Bresler, MS Gusev, OB Krasil'nik, ZF Kuznetsov, VP Soldatkin, AO Yassievich, IN
Citation: Ba. Andreev et al., Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method, IAN FIZ, 65(2), 2001, pp. 271-275
Influence of p-n junction formation at a Si/Si : Er interface on low-temperature excitation of Er3+ ions in crystalline silicon - art. no. 132202
Authors: Pawlak, BJ Vinh, NQ Yassievich, IN Gregorkiewicz, T
Citation: Bj. Pawlak et al., Influence of p-n junction formation at a Si/Si : Er interface on low-temperature excitation of Er3+ ions in crystalline silicon - art. no. 132202, PHYS REV B, 6413(13), 2001, pp. 2202
Excitation cross section of erbium in semiconductor matrices under opticalpumping - art. no. 075302
Authors: Gusev, OB Bresler, MS Pak, PE Yassievich, IN Forcales, M Vinh, NQ Gregorkiewicz, T
Citation: Ob. Gusev et al., Excitation cross section of erbium in semiconductor matrices under opticalpumping - art. no. 075302, PHYS REV B, 6407(7), 2001, pp. 5302
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204
Authors: Ganichev, SD Ketterl, H Prettl, W Merkulov, IA Perel, VI Yassievich, IN Malyshev, AV
Citation: Sd. Ganichev et al., Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204, PHYS REV B, 6320(20), 2001, pp. 1204
Mechanism of terahertz lasing in SiGe/Si quantum wells
Authors: Blom, A Odnoblyudov, MA Cheng, HH Yassievich, IN Chao, KA
Citation: A. Blom et al., Mechanism of terahertz lasing in SiGe/Si quantum wells, APPL PHYS L, 79(6), 2001, pp. 713-715
Towards Si1-xGex quantum-well resonant-state terahertz laser
Authors: Altukhov, IV Chirkova, EG Sinis, VP Kagan, MS Gousev, YP Thomas, SG Wang, KL Odnoblyudov, MA Yassievich, IN
Citation: Iv. Altukhov et al., Towards Si1-xGex quantum-well resonant-state terahertz laser, APPL PHYS L, 79(24), 2001, pp. 3909-3911
Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors
Authors: Ganichev, SD Ziemann, E Prettl, W Yassievich, IN Istratov, AA Weber, ER
Citation: Sd. Ganichev et al., Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors, PHYS REV B, 61(15), 2000, pp. 10361-10365
Effect of a magnetic field on thermally stimulated ionization of impurity centers in semiconductors by submillimeter radiation
Authors: Moskalenko, AS Perel', VI Yassievich, IN
Citation: As. Moskalenko et al., Effect of a magnetic field on thermally stimulated ionization of impurity centers in semiconductors by submillimeter radiation, J EXP TH PH, 90(1), 2000, pp. 217-221
Resonant excitation of erbium ions in crystalline-silicon-based electroluminescent structures
Authors: Bresler, MS Gusev, OB Pak, PE Yassievich, IN
Citation: Ms. Bresler et al., Resonant excitation of erbium ions in crystalline-silicon-based electroluminescent structures, IAN FIZ, 64(2), 2000, pp. 264-268
Resonant states induced by shallow acceptors in uniaxially strained semiconductors
Authors: Odnoblyudov, MA Yassievich, IN Chistyakov, VM Chao, KA
Citation: Ma. Odnoblyudov et al., Resonant states induced by shallow acceptors in uniaxially strained semiconductors, PHYS REV B, 62(4), 2000, pp. 2486-2495
Mechanism of population inversion in uniaxially strained p-Ge continuous-wave lasers
Authors: Odnoblyudov, MA Yassievich, IN Kagan, MS Chao, KA
Citation: Ma. Odnoblyudov et al., Mechanism of population inversion in uniaxially strained p-Ge continuous-wave lasers, PHYS REV B, 62(23), 2000, pp. 15291-15294
Terahertz emission of SiGe/Si quantum wells
Authors: Kagan, MS Altukhov, IV Sinis, VP Thomas, SG Wang, KL Chao, KA Yassievich, IN
Citation: Ms. Kagan et al., Terahertz emission of SiGe/Si quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 237-239
Characterization of deep impurities in semiconductors by terahertz tunneling ionization
Authors: Ziemann, E Ganichev, SD Prettl, W Yassievich, IN Perel, VI
Citation: E. Ziemann et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, J APPL PHYS, 87(8), 2000, pp. 3843-3849
Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon
Authors: Bresler, MS Gusev, OB Sobolev, NA Terukov, EI Yassievich, IN Zakharchenya, BP Gregorkevich, T
Citation: Ms. Bresler et al., Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon, PHYS SOL ST, 41(5), 1999, pp. 770-773
Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures
Authors: Gusev, OB Ber, BY Bresler, MS Zakharchenya, BP Yassievich, IN Khitrova, G Gibbs, HM Prineas, DP Lindmark, EK Masterov, VF
Citation: Ob. Gusev et al., Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures, PHYS SOL ST, 41(3), 1999, pp. 484-488
Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization
Authors: Gusev, OB Bresler, MS Zakharchenya, BP Kuznetsov, AN Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization, PHYS SOL ST, 41(2), 1999, pp. 185-191
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of erbium electroluminescence in hydrogenated amorphous silicon, SEMICONDUCT, 33(6), 1999, pp. 622-623
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