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Results: 1-15 |
Results: 15
DIELECTRIC-DISPERSION IN BARIUM STRONTIUM-TITANATE THIN-FILM CAPACITORS WITH IRIDIUM ELECTRODES
Authors: BALU V CHEN TS KATAKAM S LEE JH WHITE B ZAFAR S JIANG B ZURCHER P JONES RE LEE JC
Citation: V. Balu et al., DIELECTRIC-DISPERSION IN BARIUM STRONTIUM-TITANATE THIN-FILM CAPACITORS WITH IRIDIUM ELECTRODES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 155-166
INVESTIGATION OF BULK AND INTERFACIAL PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILM CAPACITORS
Authors: ZAFAR S JONES RE CHU P WHITE B JIANG B TAYLOR D ZURCHER P GILLEPSIE S
Citation: S. Zafar et al., INVESTIGATION OF BULK AND INTERFACIAL PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILM CAPACITORS, Applied physics letters, 72(22), 1998, pp. 2820-2822
FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY - APPLICATIONS AND INTEGRATION CHALLENGES
Authors: ZURCHER P JONES RE CHU PY TAYLOR DJ WHITE BE ZAFAR S JIANG B LII YJT GILLESPIE SJ
Citation: P. Zurcher et al., FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY - APPLICATIONS AND INTEGRATION CHALLENGES, IEEE transactions on components, packaging, and manufacturing technology. Part A, 20(2), 1997, pp. 175-181
NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS
Authors: JONES RE CHU PY JIANG B MELNICK BM TAYLOR DJ WHITE BE ZAFAR S PRICE D ZURCHER P GILLESPIE SJ OTSUKI T SUMI T JUDAI Y UEMOTO Y FUJII E HAYASHI S MORIWAKI N AZUMA M SHIMADA Y ARITA K HIRANO H NAKANE J NAKAKUM T KANO G
Citation: Re. Jones et al., NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 21-30
INTERACTION OF IR AND IRO2 THIN-FILMS WITH POLYSILICON, W AND WSIX
Authors: KUAH S BALU V CHEN TS JIANG B HADAD D WHITE B JONES RE ZURCHER P MELNICK B GILLESPIE S LEE JC
Citation: S. Kuah et al., INTERACTION OF IR AND IRO2 THIN-FILMS WITH POLYSILICON, W AND WSIX, Integrated ferroelectrics, 17(1-4), 1997, pp. 479-488
STABILITY OF REACTIVE DC-SPUTTERED IR AND IRO2 THIN-FILMS IN VARIOUS AMBIENTS
Authors: CHEN TS BALU V JIANG B KUAH SH LEE JC CHU P JONES RE ZURCHER P TAYLOR DJ GILLESPIE S
Citation: Ts. Chen et al., STABILITY OF REACTIVE DC-SPUTTERED IR AND IRO2 THIN-FILMS IN VARIOUS AMBIENTS, Integrated ferroelectrics, 16(1-4), 1997, pp. 191-198
MODELING FERROELECTRIC CAPACITOR SWITCHING USING A PARALLEL-ELEMENTS MODEL
Authors: JIANG B LEE JC ZURCHER P JONES RE
Citation: B. Jiang et al., MODELING FERROELECTRIC CAPACITOR SWITCHING USING A PARALLEL-ELEMENTS MODEL, Integrated ferroelectrics, 16(1-4), 1997, pp. 199-208
PERFORMANCE OF SRBI2TA2O9 FOR LOW-VOLTAGE, NONVOLATILE MEMORY APPLICATIONS
Authors: JONES RE ZURCHER P CHU P TAYLOR DJ ZAFAR S JIANG B GILLESPIE SJ
Citation: Re. Jones et al., PERFORMANCE OF SRBI2TA2O9 FOR LOW-VOLTAGE, NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics, 15(1-4), 1997, pp. 199-210
INVESTIGATION OF HYDROGEN-INDUCED CHANGES IN SRBI2TA2O9 FERROELECTRIC-FILMS
Authors: ZAFAR S KAUSHIK V LABERGE P CHU P JONES RE HANCE RL ZURCHER P WHITE BE TAYLOR D MELNICK B GILLESPIE S
Citation: S. Zafar et al., INVESTIGATION OF HYDROGEN-INDUCED CHANGES IN SRBI2TA2O9 FERROELECTRIC-FILMS, Journal of applied physics, 82(9), 1997, pp. 4469-4474
ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 THIN-FILMS FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS
Authors: JONES RE ZURCHER P JIANG B WITOWSKI JZ LII YT CHU P TAYLOR DJ GILLESPIE SJ
Citation: Re. Jones et al., ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 THIN-FILMS FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics, 12(1), 1996, pp. 23-31
CHARACTERISTICS OF SPIN-ON FERROELECTRIC SRBI2TA2O9 THIN-FILM CAPACITORS FOR FERROELECTRIC RANDOM-ACCESS MEMORY APPLICATIONS
Authors: CHU PY JONES RE ZURCHER P TAYLOR DJ JIANG B GILLESPIE SJ LII YT KOTTKE M FEJES P CHEN W
Citation: Py. Chu et al., CHARACTERISTICS OF SPIN-ON FERROELECTRIC SRBI2TA2O9 THIN-FILM CAPACITORS FOR FERROELECTRIC RANDOM-ACCESS MEMORY APPLICATIONS, Journal of materials research, 11(5), 1996, pp. 1065-1068
ELECTRICAL-PROPERTIES OF SRBI(2)TA(2)OG THIN-FILMS AND THEIR TEMPERATURE-DEPENDENCE FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS
Authors: TAYLOR DJ JONES RE ZURCHER P CHU P LII YT JIANG B GILLESPIE SJ
Citation: Dj. Taylor et al., ELECTRICAL-PROPERTIES OF SRBI(2)TA(2)OG THIN-FILMS AND THEIR TEMPERATURE-DEPENDENCE FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS, Applied physics letters, 68(16), 1996, pp. 2300-2302
EFFECT OF THE SENSING CAPACITANCE IN A SAWYER-TOWER SET-UP ON HYSTERESIS LOOPS - MODEL-CALCULATIONS AND SRBI2TA2O9 EXPERIMENTAL RESULTS
Authors: ZURCHER P JONES RE CHU P LII T GILLESPIE SJ JIANG B LEE JC
Citation: P. Zurcher et al., EFFECT OF THE SENSING CAPACITANCE IN A SAWYER-TOWER SET-UP ON HYSTERESIS LOOPS - MODEL-CALCULATIONS AND SRBI2TA2O9 EXPERIMENTAL RESULTS, Integrated ferroelectrics, 10(1-4), 1995, pp. 205-214
MEMORY APPLICATIONS BASED ON FERROELECTRIC AND HIGH-PERMITTIVITY DIELECTRIC THIN-FILMS
Authors: JONES RE ZURCHER P CHU P TAYLOR DJ LII YT JIANG B MANIAR PD GILLESPIE SJ
Citation: Re. Jones et al., MEMORY APPLICATIONS BASED ON FERROELECTRIC AND HIGH-PERMITTIVITY DIELECTRIC THIN-FILMS, Microelectronic engineering, 29(1-4), 1995, pp. 3-10
FERROELECTRIC NONVOLATILE MEMORIES FOR LOW-VOLTAGE, LOW-POWER APPLICATIONS
Authors: JONES RE MANIAR PD MOAZZAMI R ZURCHER P WITOWSKI JZ LII YT CHU P GILLESPIE SJ
Citation: Re. Jones et al., FERROELECTRIC NONVOLATILE MEMORIES FOR LOW-VOLTAGE, LOW-POWER APPLICATIONS, Thin solid films, 270(1-2), 1995, pp. 584-588
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