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Results:
1-22
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Results: 22
Authors:
ZYTKIEWICZ ZR
Citation: Zr. Zytkiewicz, EPITAXIAL LATERAL OVERGROWTH - A TOOL FOR DISLOCATION BLOCKADE IN MULTILAYER SYSTEMS, Acta Physica Polonica. A, 94(2), 1998, pp. 219-227
Authors:
ZYTKIEWICZ ZR
DOBOSZ D
Citation: Zr. Zytkiewicz et D. Dobosz, SUBSTRATE DEFECTS FILTRATION DURING EPITAXIAL LATERAL OVERGROWTH OF GAAS, Acta Physica Polonica. A, 92(5), 1997, pp. 1079-1082
Authors:
ZYTKIEWICZ ZR
DOBACZEWSKI L
GOMEZ D
BRIONES F
Citation: Zr. Zytkiewicz et al., PHOTOINDUCED DEFECTS CREATION ON SULFUR PASSIVATED SURFACE OF GAAS, Acta Physica Polonica. A, 92(5), 1997, pp. 1083-1086
Authors:
ZYTKIEWICZ ZR
DOMAGALA J
BAKMISIUK J
DOBOSZ D
LESZCZYNSKI M
Citation: Zr. Zytkiewicz et al., ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY, Acta Physica Polonica. A, 92(5), 1997, pp. 1092-1096
Authors:
BAKMISIUK J
DOMAGALA J
PASZKOWICZ W
TRELA J
ZYTKIEWICZ ZR
LESZCZYNSKI M
REGINSKI K
MUSZALSKI J
HARTWIG J
OHLER M
Citation: J. Bakmisiuk et al., EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES, Acta Physica Polonica. A, 91(5), 1997, pp. 911-915
Authors:
PASZKOWICZ W
DYNOWSKA E
ZYTKIEWICZ ZR
DOBOSZ D
OTTO JW
Citation: W. Paszkowicz et al., HIGH-PRESSURE DIFFRACTION STUDY OF GA1-XALXAS, Acta Physica Polonica. A, 91(5), 1997, pp. 993-996
Authors:
ZYTKIEWICZ ZR
Citation: Zr. Zytkiewicz, JOULE EFFECT AS A BARRIER FOR UNRESTRICTED GROWTH OF BULK CRYSTALS BYLIQUID-PHASE ELECTROEPITAXY, Journal of crystal growth, 172(1-2), 1997, pp. 259-268
Authors:
KACZOR P
ASHWIN MJ
DOBOSZ D
ZYTKIEWICZ ZR
NEWMAN RC
DOBACZEWSKI L
Citation: P. Kaczor et al., LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY, Acta Physica Polonica. A, 90(5), 1996, pp. 865-868
Authors:
DOBACZEWSKI L
MISSOUS M
SINGER KE
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., NEW DONOR DOPING SOURCES FOR MOLECULAR-BEAM EPITAXY OF ALGASB AND ALGAAS, Materials science and technology, 12(2), 1996, pp. 193-195
Authors:
ZYTKIEWICZ ZR
DOBOSZ D
Citation: Zr. Zytkiewicz et D. Dobosz, ELECTROEPITAXIAL GROWTH OF GASB AND ALGASB THICK EPITAXIAL LAYERS, Acta Physica Polonica. A, 88(5), 1995, pp. 965-968
Authors:
KACZOR P
ZYTKIEWICZ ZR
DOBACZEWSKI L
Citation: P. Kaczor et al., NEW LOCAL VIBRATIONAL-MODES RELATED TO SILICON IN BULK ALGAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 759-762
Authors:
KACZOR P
ZYTKIEWICZ ZR
DOBOSZ D
KALINSKI Z
Citation: P. Kaczor et al., OPTICAL AND ELECTRICAL-PROPERTIES OF BULK GASB AND ALGASB, Acta Physica Polonica. A, 88(4), 1995, pp. 763-766
Authors:
DOBACZEWSKI L
SINGER KE
MISSOUS M
TRUSCOTT WS
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., THE USE OF GA2SE3 AND GA2S3 AS DONOR DOPING SOURCES FOR MBE-GROWN ALXGA1-XSB AND ALXGA1-XAS, Semiconductor science and technology, 10(4), 1995, pp. 509-514
Authors:
ZYTKIEWICZ ZR
Citation: Zr. Zytkiewicz, LIQUID-PHASE ELECTROEPITAXIAL GROWTH OF THICK AND COMPOSITIONALLY UNIFORM ALGAAS LAYERS ON CAAS SUBSTRATES, Journal of crystal growth, 146(1-4), 1995, pp. 283-286
Authors:
DOBACZEWSKI L
KACZOR P
MISSOUS M
PEAKER AR
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P), Journal of applied physics, 78(4), 1995, pp. 2468-2477
Authors:
SURMA M
ZYTKIEWICZ ZR
FRONC K
STALLINGA P
GODLEWSKI M
Citation: M. Surma et al., PHOTO-ESR STUDY OF THE DX TO SHALLOW DONOR CONVERSION IN TE DOPED ALXGA1-XAS, Acta Physica Polonica. A, 84(4), 1993, pp. 757-760
Authors:
OSTERMAYER G
JANTSCH W
DOBOSZ D
ZYTKIEWICZ ZR
WILAMOWSKI Z
Citation: G. Ostermayer et al., ALLOY SPLITTING OF THE TE-DX STATES IN ALXGA1-XAS, Acta Physica Polonica. A, 84(4), 1993, pp. 769-772
Authors:
ZYTKIEWICZ ZR
Citation: Zr. Zytkiewicz, IN-SITU MONITORING OF ELECTROEPITAXIAL GROWTH OF THICK ALGAAS LAYERS, Acta Physica Polonica. A, 84(4), 1993, pp. 777-780
Authors:
DOBACZEWSKI L
MISSOUS M
SINGER KE
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES, Acta Physica Polonica. A, 84(4), 1993, pp. 826-828
Authors:
KACZOR P
ZYTKIEWICZ ZR
DOBACZEWSKI L
Citation: P. Kaczor et al., OBSERVATION OF THE INTERMEDIATE-ENERGY STATE OF THE DX CENTER IN ALXGA1-XASTE IN NONSTATIONARY ABSORPTION EXPERIMENTS, Semiconductor science and technology, 8(11), 1993, pp. 1973-1976
Authors:
KACZOR P
ZYTKIEWICZ ZR
GODLEWSKI M
Citation: P. Kaczor et al., X(1)-X(3) CONDUCTION-BAND SPLITTING OF ALXGA1-XAS OBSERVED IN FAR-INFRARED PHOTOINDUCED ABSORPTION RELATED TO THE DX DEFECT, Physical review. B, Condensed matter, 47(19), 1993, pp. 12558-12562
Authors:
ZYTKIEWICZ ZR
Citation: Zr. Zytkiewicz, INFLUENCE OF CONVECTION ON THE COMPOSITION PROFILES OF THICK GAALAS LAYERS GROWN BY LIQUID-PHASE ELECTROEPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 426-430
Risultati:
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