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Results: 1-25 | 26-50 | 51-75 | 76-87
Results: 1-25/87
1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots
Authors: Zhukov, AE Volovik, BV Mikhrin, SS Maleev, NA Tsatsul'nikov, AF Nikitina, EV Kayander, IN Ustinov, VM Ledentsov, NN
Citation: Ae. Zhukov et al., 1.55-1.6 mu m electroluminescence of GaAs based diode structures with quantum dots, TECH PHYS L, 27(9), 2001, pp. 734-736
GaAsN-on-GaAs MBE using a DC plasma source
Authors: Zhukov, AE Semenova, ES Ustinov, VM Weber, ER
Citation: Ae. Zhukov et al., GaAsN-on-GaAs MBE using a DC plasma source, TECH PHYS, 46(10), 2001, pp. 1265-1269
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy
Authors: Faleev, NN Musikhin, YG Suvorova, AA Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Tabuchi, M Takeda, Y
Citation: Nn. Faleev et al., Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by x-ray and synchrotron diffraction and transmission electron microscopy, SEMICONDUCT, 35(8), 2001, pp. 932-940
Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates
Authors: Maleev, NA Egorov, AY Zhukov, AE Kovsh, AR Vasil'ev, AP Ustinov, VM Ledentsov, NN Alferov, ZI
Citation: Na. Maleev et al., Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates, SEMICONDUCT, 35(7), 2001, pp. 847-853
1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them
Authors: Sakharov, AV Krestnikov, IL Maleev, NA Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Ledentsov, NN Bimberg, D Lott, JA Alferov, ZI
Citation: Av. Sakharov et al., 1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them, SEMICONDUCT, 35(7), 2001, pp. 854-859
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
Authors: Odnoblyudov, VA Kovsh, AR Zhukov, AE Maleev, NA Semenova, ES Ustinov, VM
Citation: Va. Odnoblyudov et al., Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy, SEMICONDUCT, 35(5), 2001, pp. 533-538
Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure
Authors: Ivanov, YL Elizarov, IV Ustinov, VM Zhukov, AE
Citation: Yl. Ivanov et al., Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure, SEMICONDUCT, 35(4), 2001, pp. 433-435
Novel infrared quantum dot lasers: Theory and reality
Authors: Bimberg, D Grundmann, M Ledentsov, NN Mao, MH Ribbat, C Sellin, R Ustinov, VM Zhukov, AE Alferov, ZI Lott, JA
Citation: D. Bimberg et al., Novel infrared quantum dot lasers: Theory and reality, PHYS ST S-B, 224(3), 2001, pp. 787-796
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Authors: Maleev, NA Krestnikov, IL Kovsh, AR Sakharov, AV Zhukov, AE Ustinov, VM Mikhrin, SS Passenberg, W Pawlowski, E Moller, C Tsatsulnikov, AF Kunzel, H Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
Authors: Weber, A Goede, K Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Ledentsov, NN Kopev, PS Alferov, ZI
Citation: A. Weber et al., Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 833-837
Dynamical redistribution of mean electron spin over the energy spectrum ofquantum dots
Authors: Kalevich, VK Paillard, M Kavokin, KV Marie, X Kovsh, AR Amand, T Zhukov, AE Vanelle, E Ustinov, VM Zakharchenya, BP
Citation: Vk. Kalevich et al., Dynamical redistribution of mean electron spin over the energy spectrum ofquantum dots, PHYS ST S-B, 224(2), 2001, pp. 567-571
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis
Authors: Egorov, AY Zhukov, AE Ustinov, VM
Citation: Ay. Egorov et al., 1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis, J ELEC MAT, 30(5), 2001, pp. 477-481
MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source
Authors: Zhukov, AE Zhao, R Specht, P Ustinov, VM Anders, A Weber, ER
Citation: Ae. Zhukov et al., MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source, SEMIC SCI T, 16(5), 2001, pp. 413-419
Thermodynamic analysis of the MBE growth of GaInAsN
Authors: Odnoblyudov, VA Egorov, AY Kovsh, AR Zhukov, AE Maleey, NA Semenova, ES Ustinov, VM
Citation: Va. Odnoblyudov et al., Thermodynamic analysis of the MBE growth of GaInAsN, SEMIC SCI T, 16(10), 2001, pp. 831-835
1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
Authors: Krestnikov, IL Maleev, NA Sakharov, AV Kovsh, AR Zhukov, AE Tsatsul'nikov, AF Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Lott, JA
Citation: Il. Krestnikov et al., 1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices, SEMIC SCI T, 16(10), 2001, pp. 844-848
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
Spin redistribution due to Pauli blocking in quantum dots - art. no. 045309
Authors: Kalevich, VK Paillard, M Kavokin, KV Marie, X Kovsh, AR Amand, T Zhukov, AE Musikhin, YG Ustinov, VM Vanelle, E Zakharchenya, BP
Citation: Vk. Kalevich et al., Spin redistribution due to Pauli blocking in quantum dots - art. no. 045309, PHYS REV B, 6404(4), 2001, pp. 5309
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Authors: Maleev, NA Sakharov, AV Moeller, C Krestnikov, IL Kovsh, AR Mikhrin, SS Zhukov, AE Ustinov, VM Passenberg, W Pawlowski, E Kunezel, H Tsatsul'nikov, AF Ledentsov, NN Bimberg, D Alferov, ZI
Citation: Na. Maleev et al., 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots, J CRYST GR, 227, 2001, pp. 1146-1150
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Authors: Maximov, MV Asryan, LV Shernyakov, YM Tsatsul'nikov, AF Kaiander, IN Nikolaev, VV Kovsh, AR Mikhrin, SS Ustinov, VM Zhukov, AE Alferov, ZI Ledenstov, NN Bimberg, D
Citation: Mv. Maximov et al., Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation, IEEE J Q EL, 37(5), 2001, pp. 676-683
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room temperature
Authors: Borri, P Schneider, S Langbein, W Woggon, U Zhukov, AE Ustinov, VM Ledentsov, NN Alferov, ZI Ouyang, D Bimberg, D
Citation: P. Borri et al., Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room temperature, APPL PHYS L, 79(16), 2001, pp. 2633-2635
Observation of intersubband real-space transfer in GaAs/AlAs quantum-well structures due to Gamma-X mixing
Authors: Schmidt, SR Zibik, EA Seilmeier, A Vorobjev, LE Zhukov, AE Ustinov, UM
Citation: Sr. Schmidt et al., Observation of intersubband real-space transfer in GaAs/AlAs quantum-well structures due to Gamma-X mixing, APPL PHYS L, 78(9), 2001, pp. 1261-1263
Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
Authors: Grundmann, M Heinrichsdorff, F Ledentsov, NN Ribbat, C Bimberg, D Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Lifshits, DA Ustinov, VM Alferov, ZI
Citation: M. Grundmann et al., Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications, JPN J A P 1, 39(4B), 2000, pp. 2341-2343
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